Excelics EIB3439-4P 3.40-3.90 ghz 4w internally matched power fet Datasheet

EIB3439-4P
3.40-3.90 GHz 4W Internally Matched Power FET
UPDATED 03/02/2006
FEATURES
•
•
•
•
•
•
.120 MIN
3.40-3.90 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
12.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
Non-Hermetic Metal Flange Package
Excelics
.120 MIN
.020
EIC3439-4P
.827 .669
.400
YYWW
SN
SN
.126
.161
.508
.450
.004
.052
.105
.084
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
G1dB
∆G
PAE
Caution! ESD sensitive device.
PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 3.40-3.90GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain at 1dB Compression
f = 3.40-3.90GHz
VDS = 8 V, IDSQ ≈ 1600mA
Gain Flatness
f = 3.40-3.90GHz
VDS = 8 V, IDSQ ≈ 1600mA
Power Added Efficiency at 1dB Compression
f = 3.40-3.90GHz
VDS = 8 V, IDSQ ≈ 1600mA
Id1dB
Drain Current at 1dB Compression
IDSS
Saturated Drain Current
VP
Pinch-off Voltage
RTH
Thermal Resistance2
MIN
TYP
MAX
UNITS
35.5
36.5
dBm
11.0
12.0
dB
±0.6
dB
30
1700
2000
mA
VDS = 3 V, VGS = 0 V
2800
3500
mA
VDS = 3 V, IDS = 28 mA
-2.0
-3.5
V
5.5
6.0
Note: 1) Tested with 100 Ohm gate resistor.
f = 3.40-3.90GHz
%
o
C/W
2) Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING1,2
SYMBOL
CHARACTERISTIC
ABSOLUTE1
CONTINUOUS2
VDS
Drain to Source Voltage
12 V
8V
VGS
Gate to Source Voltage
-6.0 V
-4.0 V
IGSF
Forward Gate Current
43.2 mA
14.4 mA
IGSR
Reserve Gate Current
-7.2 mA
-2.4 mA
PIN
Input Power
36.5 dBm
@ 3dB compression
TCH
Channel Temperature
175°C
175°C
TSTG
Storage Temperature
-65/+175°C
-65/+175°C
25 W
25 W
PT
Total Power Dissipation
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 1
Revised March 2006
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