NOT RECOMMENDED FOR NEW DESIGN USE DMP2120U DMP2225L P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features BVDSS RDS(ON) Package -20V 110mΩ @ VGS = -4.5V 225mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -2.6A -2.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data General Purpose Interfacing Switch Power Management Functions Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Drain SOT23 D Gate S G Top View Source Top View Equivalent Circuit Ordering Information (Note 5) Part Number DMP2225L-7 DMP2225LQ-7 Notes: Qualification Standard Automotive Case SOT-23 SOT-23 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information YM 2P2 Chengdu A/T Site Date Code Key Year Code Month Code 2008 V Jan 1 Shanghai A/T Site 2009 W Feb 2 DMP2225L Document number: DS31461 Rev. 7 - 3 2P2 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) M = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) Mar 3 ~ ~ Apr 4 2017 E May 5 Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 2019 G Aug 8 Sep 9 2020 H Oct O 2021 I Nov N Dec D December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2120U DMP2225L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +70°C Unit V V IDM Value -20 ±12 -2.6 -2 8 Symbol PD RθJA TJ, TSTG Value 1.08 115 -55 to +150 Unit W °C/W °C ID Pulsed Drain Current (Note 7) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS IDSS — — — — — — -800 — — ±80 V nA On-State Drain Current ID(ON) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage IGSS -20 — -6 -3 — VGS(TH) -0.45 — -1.25 V RDS(ON) — — — 110 225 — -1.26 mΩ |Yfs| VSD 80 165 4 — Ciss Coss Crss Rg Qg Qgs Qgd — — — — — — — 250 88 58 12 4.3 0.9 2.1 — — — 16 5.3 — — pF pF pF Ω Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 7) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Notes: A nA s V nC Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VDS ≤ -5V, VGS = -4.5V VDS ≤ -5V, VGS = -2.5V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250µA VGS = -4.5V, ID = -2.6A VGS = -2.5V, ID = -2.0A VDS = -5V, ID = -2.6A VGS = 0V, IS = -2.6A VDS = -10V, VGS = 0V f = 1.0MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = -4.5V, VDS = -10V, ID = -2.7A 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP2225L Document number: DS31461 Rev. 7 - 3 2 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2120U 10 6 VGS = -10V VDS = -5V Pulsed VGS = -5.0V )A ( T 4 N E R R U C 3 N IA R D 2 ,D -I -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 5 VGS = -4.0V 8 6 VGS = -2.5V 4 2 VGS = -2.0V 1 TA = 150°C TA = 85°C VGS = -1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.5 1 1.5 2 2.5 3 -VGS , GATE SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 1,000 f = 1 MHz VGS = 0V CT, TOTAL CAPACITANCE (pF) RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () TA = 25°C TA = -55°C 0 0 5 1 VGS = -2.5V 0.1 Ciss 100 VGS = -4.5V VGS = -10V C oss Crss 0.01 0.01 10 1.2 1.5 0 0.1 1 10 -ID, DRAIN CURRENT (A) Figure 3 On-Resistance vs. Drain Current and Gate Voltage 1.4 1.1 1 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) -V GS(TH), GATE THRESHOLD VOLTAGE (V) DMP2225L -I D = 250µ A 0.9 0.8 0.7 0.6 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (癈 (°C)) Figure 5 Gate Threshold Voltage vs. Ambient Temperature Document number: DS31461 Rev. 7 - 3 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 4 Typical Total Capacitance 20 VGS = -4.5V ID = -3.0A 1.3 1.2 1.1 VGS = -10V ID = -5.0A VGS = -2.5V ID = -1.0A 1 0.9 0.8 0.7 0.5 -50 DMP2225L 2 3 of 6 www.diodes.com 0.6 -55 25 85 125 150 C) TA, AMBIENT TEMPERATURE (° (C) Figure 6 Normalized Static Drain-Source On-Resistance vs. Ambient Temperature December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2120U 5 DMP2225L 10 -VGS, GATE-SOURCE VOLTAGE (V) -IS, SOURCE CURRENT (A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0.5 8 VDS = -10V ID = -3A 6 4 2 0 0.6 0.7 0.8 0.9 1 -VSD, SOURCE DRAIN VOLTAGE (V) Figure 7 Reverse Drain Current vs. Source-Drain Voltage 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 8 Gate-Charge Characteristics 14 100 RDS(ON) Limited -ID, DRAIN CURRENT (A) )A 10 ( T N E R R U 1 C N I A R D ,D I 0.1 0.01 0.1 DC PW= 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs TJ(MAX)= 150°C TA = 25°C Single Pulse - VDS P W= 10s 1 10 , DRAIN-SOURCE VOLTAGE (V) Figure 9 Safe Operation Area 100 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA R JA = 163癈 /W 163°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMP2225L Document number: DS31461 Rev. 7 - 3 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Figure 10 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2120U DMP2225L Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMP2225L Document number: DS31461 Rev. 7 - 3 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 5 of 6 www.diodes.com December 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP2120U DMP2225L IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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