Panasonic DSA7504 Silicon pnp epitaxial planar type for low frequency amplification Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7504
Silicon PNP epitaxial planar type
For low frequency amplification
 Features
 Package
 Low collector-emitter saturation voltage VCE(sat)
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Code
MiniP3-F2-B
Package dimension clicks here.→
 Packaging
DSA7504×0L Embossed type (Thermo-compression sealing): 1000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
–30
V
Collector-emitter voltage (Base open)
VCEO
–20
V
Emitter-base voltage (Collector open)
VEBO
–7
V
Collector current
IC
–4
A
Peak collector current
ICP
–7
A
Collector power dissipation *
PC
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Click!
 Pin Name
1. Base
2. Collector
3. Emitter
 Marking Symbol: 4F
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness
of 1.7 mm for the collector portion
Absolute maximum rating without heat sink for PC is 0.5 W
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC = –10 mA, IE = 0
–30
V
Collector-emitter voltage (Base open)
VCEO
IC = –1 mA, IB = 0
–20
V
Emitter-base voltage (Collector open)
VEBO
IE = –10 mA, IC = 0
–7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = –30 V, IE = 0
– 0.1
Emitter-base cutoff current (Collector open)
IEBO
VEB = –7 V, IC = 0
– 0.1
Forward current transfer ratio *1, 2
hFE
VCE = –2 V, IC = –2 A
VCE(sat)
IC = –3 A, IB = – 0.1 A
– 0.7
VCE = –6 V, IC = –50 mA
180
MHz
VCB = –20 V, IE = 0, f = 1 MHz
30
pF
Collector-emitter saturation voltage *1
Transition frequency
fT
Collector output capacitance
(Common base, input open circuited)
Cob
120
mA
315

–1.0
V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Code
Q
R
0
Rank
Q
R
No-rank
hFE
120 to 205
180 to 315
120 to 315
Marking Symbol
4FQ
4FR
4F
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: May 2012
Ver. BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA7504
DSA7504_PC-Ta
DSA7504_IC-VCE
PC  Ta
IC  VCE
−4
−15.0 mA
−3
−2
−3.0 mA
−1
250
0
40
80
120
160
0
0
200
Ambient temperature Ta (°C)
−2
−4
−8
−10
DSA7504_VCEsat-IC
DSA7504_IC-VBE
VCE(sat)  IC
IC  VBE
−10
−1
Ta = 85°C
25°C
−10−1
−1
−10
VCE = −2 V
−3.0
−2.0
Ta = 85°C
25°C
−30°C
−1.0
0
0
− 0.2 − 0.4 − 0.6 − 0.8 −1.0
DSA7504_fT-IC
fT  IC
400
VCE = −10 V
Ta = 25°C
300
200
100
−10
−102
200
0
−10−2
−103
Collector current IC (mA)
Ver. BED
−1
−10−1
−10
Collector current IC (A)
Cob  VCB
Base-emitter voltage VBE (V)
Collector current IC (A)
0
−1
−30°C
DSA7504_Cob-VCB
−30°C
−10−2
−10−2
25°C
400
−12
−4.0
IC / IB = 10
−10−1
Transition frequency fT (MHz)
−6
Ta = 85°C
600
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector-emitter saturation voltage VCE(sat) (V)
−9.0 mA
Forward current transfer ratio hFE
500
VCE = −2 V
IB = −21.0 mA
Ta = 25°C
Collector current IC (A)
750
800
−1.2
Collector output capacitance
(Common base, input open circuited) Cob (pF)
Collector power dissipation PC (mW)
Copper plate at the collector is
more than 1.0 cm2 in area, 1.7 mm
in thickness.
1 000
2
hFE  IC
−5
1 250
0
DSA7504_hFE-IC
80
IE = 0
f = 1 MHz
Ta = 25°C
60
40
20
0
−1
−10
−100
Collector-base voltage VCB (V)
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