Fairchild FSFR1800HSL Fsfr-hs series â advanced fairchild power switch(fpsâ ¢) Datasheet

FSFR-HS Series — Advanced Fairchild Power Switch
(FPS™) for Half-Bridge Resonant Converters
Features
Description
 Variable Frequency Control with 50% Duty Cycle
for Half-Bridge Resonant Converter Topology
 High Efficiency through Zero Voltage Switching (ZVS)
 Built-in High-Side Gate Driver IC
 Internal UniFET™s with Fast-Recovery Type Body
Diode (trr=160ns Typical)
 Fixed Dead Time (350ns) Optimized for MOSFETs
 Operating Frequency Up to 600kHz for Soft-Start
 Self Auto-Restart Operation for All Protections, Despite
External LVCC Bias
 Line UVLO with Programmable Hysteresis Level
 Simple On/Off with Line UVLO Pin
 Easy Configuration and Compatibility with FAN7930 for
Line UVLO without External Components
 Protection Functions: Over-Voltage Protection (OVP),
Over-Current Protection (OCP), Abnormal OverCurrent Protection (AOCP), Internal Thermal
Shutdown (TSD)
The FSFR-HS is a highly integrated power switch
designed for high-efficiency half-bridge resonant
converters. Offering everything necessary to build a
reliable and robust resonant converter, the FSFR-HS
simplifies designs while improving productivity and
performance. The FSFR-HS combines power MOSFETs,
a high-side gate-drive circuit, an accurate currentcontrolled oscillator, and built-in protection functions.
The high-side gate-drive circuit has a common-mode
noise cancellation capability, which provides stable
operation with excellent noise immunity. Using zerovoltage-switching (ZVS) technique dramatically reduces
the switching losses and significantly improves efficiency.
The ZVS also reduces the switching noise noticeably,
even though the operating frequency increases. It allows
a small Electromagnetic Interference (EMI) filter, besides
the high operating frequency, to reduce the volume of the
resonant tank and to increase power density.
The FSFR-HS can be applied to resonant converter
topologies such as series resonant, parallel resonant,
and LLC resonant converters.
Applications
Related Resources
 PDP and LCD TVs
 Desktop PCs and Servers
 Adapters
 Telecom Power Supplies
AN4151 — Half-Bridge LLC Resonant Converter Design
Using FSFR-Series Fairchild Power Switch (FPS™)
Ordering Information
Part Number
Package
FSFR1800HS
9-SIP
FSFR1800HSL
9-SIP
L-Forming
FSFR1700HS
9-SIP
FSFR1700HSL
9-SIP
L-Forming
Operating
Maximum Output Power
Maximum Output
Junction
RDS(ON_MAX)
without Heatsink
Power with Heatsink
Temperature
(VIN=350~400V)(1,2)
(VIN=350~400V)(1,2)
-40 to +130°C
0.95Ω
120W
260W
-40 to +130°C
1.25Ω
100W
200W
Notes:
1. The junction temperature can limit the maximum output power.
2. Maximum practical continuous power in an open-frame design at 50°C ambient.
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
August 2011
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Application Circuit Diagram
Figure 1. Typical Application Circuit (LLC Resonant Half-Bridge Converter)
Block Diagram
Figure 2. Internal Block Diagram
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
2
Figure 3. Package Diagram
Pin Definitions
Pin #
Name
Description
1
DL
This is the drain of the high-side MOSFET, typically connected to the input DC link voltage.
2
LS
This is the line-sensing pin for the input voltage Under-Voltage Lockout (UVLO).
3
RT
This pin is used for controlling the switching frequency in normal operation. When any
protections are triggered, the internal Auto/Restart (A/R) circuit starts to sense the voltage on
the pin, which is discharged naturally by external resistance. The IC can be operated with
A/R when the voltage decreases 0.1V. Typically, an opto-coupler is connected to control the
switching frequency for the output voltage regulation and resistors for setting minimum /
maximum operating frequency.
4
CS
This pin senses the current flowing through the low-side MOSFET. Typically, negative
voltage is applied to this pin.
5
SG
This pin is the ground of the control part.
6
PG
This pin is the power ground. This pin is connected to the source of the low-side MOSFET.
7
LVCC
This pin is the supply voltage of the control IC.
8
NC
9
HVCC
This is the supply voltage of the high-side gate-drive circuit.
No connection
10
CTR
This is the drain of the low-side MOSFET. Typically, a transformer is connected to this pin.
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Pin Configuration
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In
addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VDS
Maximum Drain-to-Source Voltage (DL-CTR and CTR-PG)
500
LVCC
Low-Side Supply Voltage
-0.3
25.0
V
-0.3
25.0
V
HVCC to CTR High-Side VCC Pin to Low-Side Drain Voltage
HVCC
V
High-Side Floating Supply Voltage
-0.3
525.0
V
VRT
Timing Resistor Connecting and Auto-Restart Pin Voltage
-0.3
5.0
V
VLS
Line Sensing Input Voltage
-0.3
LVCC
V
VCS
Current Sense (CS) Pin Input Voltage
-5
1
V
fsw
Recommended Switching Frequency
10
600
kHz
50
V/ns
dVCTR/dt
PD
TJ
TSTG
Allowable Low-Side MOSFET Drain Voltage Slew Rate
Total Power Dissipation(4)
FSFR1800HS/L
11.7
FSFR1700HS/L
11.6
Maximum Junction Temperature(5)
W
+150
Recommended Operating Junction Temperature
(5)
Storage Temperature Range
-40
+130
-55
+150
C
C
MOSFET Section
VDGR
Drain Gate Voltage (RGS=1M)
VGS
Gate Source (GND) Voltage
IDM
Drain Current Pulsed(6)
500
±30
FSFR1800HS/L
23
FSFR1700HS/L
20
FSFR1800HS/L
ID
V
Continuous Drain Current
FSFR1700HS/L
TC=25C
7.0
TC=100C
4.5
TC=25C
6.0
TC=100C
3.9
V
A
A
Package Section
Torque
Recommended Screw Torque
5~7
kgf·cm
Notes:
3. These parameters, although guaranteed, are tested only in EDS (wafer test) process.
4. Per MOSFET when both MOSFETs are conducting.
5. The maximum value of the recommended operating junction temperature is limited by thermal shutdown.
6. Pulse width is limited by maximum junction temperature.
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
θJC
Parameter
Junction-to-Case Center Thermal Impedance
(Both MOSFETs Conducting)
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
Value
FSFR1800HS/L
10.7
FSFR1700HS/L
10.8
Unit
ºC/W
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Absolute Maximum Ratings
TA=25°C, LVCC, HVCC =17VDC and RT=26 k unless otherwise specified.
Symbol
Parameter
Conditions
Min.
Typ.
Max. Unit
MOSFET Section
BVDSS
Drain-to-Source Breakdown Voltage
RDS(ON)
On-State Resistance
trr
Body Diode Reverse
(7)
Recovery Time
ID=200μA, TA=25C
500
V
ID=200μA, TA=125C
540
FSFR1800HS/L
VGS=10V, ID=3.0A
0.77
0.95
FSFR1700HS/L
VGS=10V, ID=2.0A
1.00
1.25
FSFR1800HS/L
VGS=0V, IDIODE=7.0A,
dIDIODE/dt=100A/μs
160
FSFR1700HS/L
VGS=0V, IDIODE=6.0A,
dIDIODE/dt=100A/μs
160

ns
Supply Section
ILK
Offset Supply Leakage Current
HVCC=VCTR=500V
50
μA
IQHVCC
Quiescent HVCC Supply Current
(HVCCUV+) - 0.1V
50
120
μA
IQLVCC
Quiescent LVCC Supply Current
(LVCCUV+) - 0.1V
IOHVCC
Operating HVCC Supply Current (RMS Value)
IOLVCC
Operating LVCC Supply Current (RMS Value)
100
200
μA
fOSC=50KHz
6
9
mA
No Switching
100
200
μA
fOSC=50KHz
7
11
mA
No Switching
2
4
mA
UVLO Section
LVCCUV+
LVCC Supply Under-Voltage Positive Going Threshold (LVCC,START)
11.2
12.5
13.8
V
LVCCUV-
LVCC Supply Under-Voltage Negative Going Threshold (LVCC,STOP)
8.9
10.0
11.1
V
LVCCUVH LVCC Supply Under-Voltage Hysteresis
2.5
V
HVCCUV+ HVCC Supply Under-Voltage Positive Going Threshold (HVCC,START)
8.2
9.2
10.2
V
HVCC Supply Under-Voltage Negative Going Threshold (HVCC,STOP)
7.8
8.7
9.6
V
HVCCUV-
HVCCUVH HVCC Supply Under-Voltage Hysteresis
0.5
V
Oscillator & Feedback Section
VRT
Output Voltage on RT Pin
fOSC
Output Oscillation Frequency
DC
Output Duty Cycle
RT=26k
1.5
2.0
2.5
V
47
50
53
kHz
48
50
52
%
0.07
0.12
0.17
V
Protection Section
VRT,RESET
Threshold Voltage to Begin Restart
tDELAY,RESET Delay to Disable OSC Circuit After Protection
fosc=50kHz
20
ms
VLINE
On Threshold of Input Voltage
2.38
2.50
2.62
V
ILINE
Hysteresis Current for Line UVLO
7.5
9.5
11.5
μA
VOVP
LVCC Over-Voltage Protection
21
23
25
V
VAOCP
AOCP Threshold Voltage
-1.0
-0.9
-0.8
tBAO
VOCP
AOCP Blanking Time(7)
VCS < VAOCP
OCP Threshold Voltage
tBO
OCP Blanking Time(7)
tDA
Delay Time (Low-Side) Detecting from VAOCP to Switch Off(7)
TSD
Thermal Shutdown Temperature(7)
VCS < VOCP
50
V
ns
-0.64
-0.58
-0.52
V
1.0
1.5
2.0
μs
250
400
ns
120
135
150
C
Dead-Time Control Section
DT
Dead Time(8)
350
ns
Notes:
7. This parameter, although guaranteed, is not tested in production.
8. These parameters, although guaranteed, are tested only in EDS (wafer test) process.
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
5
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Electrical Characteristics
These characteristic graphs are normalized at TA=25ºC.
1.1
1.05
1.05
Normalized at 25°C
1.1
1
0.95
0.9
0.95
0.9
-50
-25
Figure 4.
Normalized at 25°C
1
0
25
50
75
100
-50
Low-Side MOSFET Duty Cycle
vs. Temperature
-25
0
25
50
75
100
Figure 5. Switching Frequency vs. Temperature
1.1
1.1
1.05
1.05
1
1
0.95
0.95
0.9
0.9
-50
-25
0
25
50
75
100
-50
Figure 6. High-Side VCC (HVCC) Start vs. Temperature
-25
0
25
50
75
100
Figure 7. High-Side VCC (HVCC) Stop vs. Temperature
1.1
1.1
1.05
1.05
1
1
0.95
0.95
0.9
0.9
-50
-25
0
25
50
75
-50
100
Figure 8. Low-Side VCC (LVCC) Start vs. Temperature
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
-25
0
25
50
75
100
Figure 9. Low-Side VCC (LVCC) Stop vs. Temperature
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Typical Performance Characteristics
1.1
1.1
1.05
1.05
Normalized at 25OC
Normalized at 25OC
These characteristic graphs are normalized at TA=25ºC.
1
0.95
1
0.95
0.9
0.9
-50
-25
0
25
50
75
-50
100
-25
0
25
Temp (OC)
Temp
Figure 10. LVCC OVP Voltage vs. Temperature
50
75
100
(OC)
Figure 11. RT Voltage vs. Temperature
1.1
Normalized at 25OC
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100
Temp (OC)
Figure 12. VRT,RESET vs. Temperature
Figure 13. OCP Voltage vs. Temperature
Figure 14. VLINE vs. Temperature
Figure 15. ILINE vs. Temperature
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA=25ºC.
Figure 16. tDELAY,RESET vs. Temperature
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
Figure 17. VRT,RESET vs. Temperature
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Typical Performance Characteristics (Continued)
1. Basic Operation: FSFR-HS series is designed to drive
high-side and low-side MOSFETs complementarily with
50% duty cycle. A fixed dead time of 350ns is introduced
between consecutive transitions, as shown in Figure 18.
Assuming the saturation voltage of opto-coupler
transistor is 0.2V, the maximum switching frequency is
determined as:
f max 
Once LVCC is higher than LVCC,START = 12.5V, the IC
starts to operate, generates the low-side gate signal, and
drives the low-side MOSFET. The bootstrap diode and
capacitor is charged by the low-side MOSFET’s
operation. After the voltage on HVCC increases up to
HVCC,START, typically 9.2V, the high-side gate signal is
generated for the MOSFET.
1
[ Hz ]
792 p  Rmin || Rmax  0.54 µ
(2)
Figure 18. MOSFET Gate Drive Signals
2. Internal Oscillator: FSFR-HS series employs a
current-controlled oscillator, as shown in Figure 19.
Internally, the voltage of the RT pin is regulated at 2V
and the charging / discharging current for the oscillator
capacitor, CT, is obtained by copying the current flowing
out of the RT pin (ICTC) using a current mirror. Therefore,
the switching frequency increases as ICTC increases.
Figure 20. Resonant Converter Typical Gain Curve
Figure 19. Current-Controlled Oscillator
3. Frequency Setting: Figure 20 shows the typical
voltage gain curve of a resonant converter, where the
gain is inversely proportional to the switching frequency
in the ZVS region. The output voltage can be regulated
by modulating the switching frequency. Figure 21 shows
the typical circuit configuration for the RT pin, where the
opto-coupler transistor is connected to the RT pin to
modulate the switching frequency. The switching
frequency may be controlled from 20kHz to 500kHz.
Figure 21. Frequency Control Circuit
To prevent excessive inrush current and overshoot of
output voltage during startup, the IC needs to increase
the voltage gain of the resonant converter progressively.
Since the voltage gain of the resonant converter is
inversely proportional to the switching frequency, softstart is implemented by sweeping down the switching
frequency from an initial high frequency (f I S S ) until the
output voltage is established.
The minimum switching frequency is determined as:
f min 
1
792 p  Rmin  0.54 µ
[ Hz ]
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
The soft-start circuit is constructed by connecting R-C
series network to the RT pin, as shown in Figure 21.
Initially, the operating frequency is set by the parallel
impedance of RSS and Rmin.
(1)
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Functional Description
f ss 
1
[ Hz ]
792 p  Rmin || R SS  0.54 
(3)
The soft-start time, tSS, can be calculated by:
tSS  3  RSS  CSS [ s ]
Once a fault condition is detected, switching is instantly
terminated and the MOSFETs remain off. When LVCC falls
to the LVCC stop voltage of 10V and VRT is lower than
VRT,RESET of 0.1V, the protection is reset. The FSFR-HS
resumes normal operation when LVCC reaches the start
voltage of 12.5V.
(4)
4. Self Auto-Restart: The FSFR-HS series can restart
automatically even though any built-in protections are
triggered in case external supply voltage is applied. As
shown in Figure 22 and Figure 23; once a protection is
triggered, the power MOSFET immediately stops. The
counter starts to operate and 1008-clocks are counted,
then the V-I converter is disabled. CSS starts to be
naturally discharged with the series impedance of RSS
and Rmin until VRT drops to VRT,RESET, typically 0.1V. Then,
all protections are reset and the V-I converter resumes.
The FSFR-HS starts switching again with soft-start.
The counter operating time for 1008-clocks after
protection activation is set by the current out of the RT
pin until VRT drops to VRT,RESET. Finally, the stop time of
FSFR-HS can be estimated, without considering the
counter operation time, as:
tSTOP  3 CSS  RSS  Rmin  [ s ]
(5)
Figure 24. Protection Blocks
5.1 Over-Current Protection (OCP): When the
sensing pin voltage drops below -0.58V and its duration
becomes more than OCP blanking time of 1.5µs, OCP
is triggered and the MOSFETs remain off.
5.2 Abnormal Over-Current Protection (AOCP):
If the secondary rectifier diodes are shorted, large
current with extremely high di/dt can flow through the
MOSFET before OCP is triggered. AOCP is triggered
without shutdown delay if the sensing pin voltage drops
below -0.9V.
5.3 Over-Voltage Protection (OVP): When the LVCC
reaches 23V, OVP is triggered. This protection is used
when auxiliary winding of the transformer supplies VCC
to the FPS™.
Figure 22. Internal Block for Auto-Restart
5.4 Thermal Shutdown (TSD): The MOSFETs and
the control IC in one package make it easier for the
control IC to detect the abnormal over-temperature of
the MOSFETs. If the temperature exceeds
approximately 130C, thermal shutdown triggers.
6. Line Under-Voltage Lockout (UVLO): FSFR-HS
includes precise line UVLO (or brownout) with
programmable hysteresis voltage. This function can start
or restart the IC when VLS for the scale-down voltage of
the DC-link by the sensing resistors, R1 and R2, is higher
than VLINE of 2.5V as the DC-link voltage increases and
vice versa. A hysteresis voltage between the start and
stop voltage of the IC is programmable by ILINE. In normal
operation, the comparator’s output is HIGH and ILINE is
deactivated so that a voltage on LS pin, VLS, can be
obtained as a divided voltage by R1 and R2. On the
contrary, ILINE is activated when the comparator’s output
is LOW. VLS is generated by the difference between the
current through R1 and ILINE.
Figure 23. Self Auto-Restart Operation
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
5. Protection Circuits: The FSFR-HS series has several
self-protective functions; such as Over-Current Protection
(OCP), Abnormal Over-Current Protection (AOCP), OverVoltage Protection (OVP), Thermal Shutdown (TSD), and
Line Under-Voltage Lockout (LUVLO or Brownout).
These protections are Auto-Restart Mode protections, as
shown in Figure 24.
The initial maximum frequency can be set up to 600kHz,
which is given by:
Cr
Np
Ns
The start and stop input-voltage can be calculated as:
Vdc link ,STOP  VLINE 
R1  R 2
[V ]
R2
Vdclink ,START  Vdclink ,STOP  I LINE  R1 [V ]
Ns
Control
IC
(6)
VCS
I DS
CS
(7)
SG
PG
Rsense
V CS
IDS
Figure 27. Half-Wave Sensing
I DS
Figure 25. Half-Wave Sensing
VCS
7. Simple Remote-On/Off: The power stage can be
shutdown with optional Auto-Restart Mode, as shown in
Figure 26.
Cr
Control
IC
VCS
To configure an external protection with Auto-Restart
Mode, an opto-coupler and the LS pin are used. When
the voltage on the LS pin is pulled below VLINE (2.5V), the
IC stops during the status holds. However, the optocoupler stops pulling down and the IC can perform the
auto-restart operation itself.
Np
CS
SG
PG
Rsense
Ns
Ns
IDS
Figure 28. Full-Wave Sensing
8.2 Capacitive Sensing Method: The drain current
can be sensed using an additional capacitor parallel
with the resonant capacitor, as shown in Figure 29.
During the low-side switch turn on, the current, iCB
through CB, makes VSENSE across RSENSE. The iCB is
scale-down of ip by the impedance ratio of Cr and CB.
Generally, 1/100~1/1000 is adequate for the ratio of CB
against Cr. RD is used as a damper for reducing noise
generated by switching transition. Several hundreds of
ohm to a few of kilo-ohms can be normally used.
VSENSE can be estimated as;
Figure 26. External Protection Circuits
Vsense  I Cr
8. Current-Sensing Methods: FSFR-HS series employs
negative voltage sensing to detect the drain current of
MOSFET, which allows a low-noise resistive sensing
using a filter with low time-constant and capacitive
sensing method.
pk
CB
 Rsense [V ]
Cr
(8)
8.1 Resistive Sensing Method: The IC can sense
drain current as a negative voltage, as shown in Figure
27 and Figure 28. Half-wave sensing allows low power
dissipation in the sensing resistor; while full-wave
sensing has less switching noise in the sensing signal.
For a time constant range for the filter, 3/100~1/10 of
the operating frequency is reasonable.
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
CFilter can be used to reduce some noise induced from
transformer or switching transition. Generally, hundreds
of pico-farad to tens of nano-farad is adequate,
depending on the quantity of noise.
Figure 29. Capacitive Sensing
Figure 30. Example of Duty Balancing
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
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FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
9. PCB Layout Guidelines: Duty imbalance problems
may occur due to the radiated noise from the main
transformer, the inequality of the secondary side
leakage inductances of main transformer, and so on.
This is one of the reasons that the control components
in the vicinity of the RT pin are enclosed by the primary
current flow pattern on PCB layout. The direction of the
magnetic field on the components caused by the
primary current flow is changed when the high- and
low-side MOSFET turn on by turns. The magnetic fields
with opposite directions induce a current through, into,
or out of the RT pin, which makes the turn-on duration
of each MOSFET different. It is strongly recommended
to separate the control components in the vicinity of the
RT pin from the primary current flow pattern in the PCB
layout. Figure 30 shows an example for a dutybalanced case.
Figure 31. 9-Lead, Single Inline Package (SIP)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
13
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Physical Dimensions
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
Physical Dimensions
Figure 32. 9-Lead, Single Inline Package (SIP), L-Forming
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/.
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
14
FSFR-HS Series — Advanced Fairchild Power Switch (FPS™) for Half-Bridge Resonant Converter
© 2011 Fairchild Semiconductor Corporation
FSFR1800 / FSFR1700-HS • Rev.1.0.0
www.fairchildsemi.com
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