Suntac IRF6N60 Power mosfet Datasheet

IRF6N60
!
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
‹ Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability
‹ Avalanche Energy Specified
without degrading performance over time. In addition, this
‹ Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy
‹ Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a
‹ IDSS Specified at Elevated Temperature
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP
D
SO URCE
DRAIN
G ATE
Front View
G
S
1
2
3
N-Channel MOSFET
Page 1
IRF6N60
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current Ё Continuous
Ё Pulsed
Gate-to-Source Voltage Ё Continue
Ё Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
ID
6.0
A
IDM
18
VGS
±20
VGSM
±40
PD
125
TO-220FP
45
TJ, TSTG
-55 to 150
(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25ȍ)
EAS
180
Thermal Resistance Ё Junction to Case
șJC
1.0
șJA
62.5
TL
260
Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к
Ё Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
V
W
TO-220
Operating and Storage Temperature Range
V
к
mJ
к/W
к
(1) VDD = 50V, ID = 6A
(2) Pulse Width and frequency is limited by TJ(max) and thermal response
ORDERING INFORMATION
Part Number
Package
IRF6N60...............................................TO-220
....................IRF6N60FP
TO-220 Full Pak
TEST CIRCUIT
Test Circuit – Avalanche Capability
Page 2
IRF6N60
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25к.
IRF6N60
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 ӴA)
Symbol
Min
V(BR)DSS
600
Typ
Max
Units
V
ӴA
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125к)
IDSS
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 ӴA)
VGS(th)
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 3.5A) *
RDS(on)
100
50
Forward Transconductance (VDS = 15 V, ID = 3.0A) *
Input Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
(VDD = 300 V, ID = 6.0 A,
VGS = 10 V,
RG = 9.1ȍ) *
(VDS = 300 V, ID = 6.0 A,
VGS = 10 V)*
gFS
2.0
ȍ
1.2
3.4
mhos
Ciss
1498
2100
Coss
158
220
pF
pF
Crss
29
60
pF
td(on)
14
30
tr
19
40
ns
ns
td(off)
40
80
ns
tf
26
55
ns
50
nC
nC
Qg
35.5
Qgs
8.1
Qgd
14.1
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
VSD
0.83
ton
**
ns
trr
266
ns
Gate-Drain Charge
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 6.0 A,
dIS/dt = 100A/µs)
1.2
V
* Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2%
** Negligible, Dominated by circuit inductance
Page 3
IRF6N60
POWER MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Page 4
IRF6N60
POWER MOSFET
PACKAGE DIMENSION
TO-220
A
D
c1
PIN 1: GATE
PIN 2: DRAIN
PIN 3: SOURCE
E1
E
F
φ
A
A1
L1
b
b1
c
c1
D
L
E
E1
e
e1
F
L
b1
L1
A1
c
e
b
e1
φ
Side View
Front View
TO-220FP
C
I
0
R1
.5
0
0.1
8²
1
.
R3
B
J
H
Q
D
R1
.5
0
A
A
B
C
D
E
E
G
H
I
O
P
K
J
K
0
.6
R1
M
N
O
P
G
Q
b
R
b
b1
b2
e
N
M
b2
b1
e
Front View
R
Side View
Back View
Page 5
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