ONSEMI NTD4810NH

NTD4810NH
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
These are Pb−Free Devices
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RDS(on) MAX
V(BR)DSS
ID MAX
10 mW @ 10 V
30 V
54 A
16.7 mW @ 4.5 V
Applications
• CPU Power Delivery
• DC−DC Converters
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
N−Channel
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
10.8
A
Continuous Drain
Current (RqJA) (Note 1)
TA = 25°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.0
W
Continuous Drain
Current (RqJA) (Note 2)
TA = 25°C
ID
8.6
A
4
1 2
TA = 85°C
6.7
TA = 25°C
PD
1.28
W
Continuous Drain
Current (RqJC)
(Note 1)
TC = 25°C
ID
54
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current
TC = 85°C
PD
50
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
−55 to
175
°C
IS
41
A
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 0.3 mH, IL(pk) = 21 A, RG = 25 W)
EAS
66
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
120
A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2 3
1
2
3
3 IPAK
IPAK
CASE 369AC
CASE 369D
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
W
IDM
Current Limited by Package
DPAK
CASE 369C
(Bent Lead)
STYLE 2
42
TA = 25°C
tp=10ms
1
3
4
Drain
4
Drain
YWW
48
10NHG
Steady
State
4
4
8.4
YWW
48
10NHG
Power Dissipation
(RqJA) (Note 2)
TA = 85°C
S
4
Drain
YWW
48
10NHG
Parameter
G
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
4810NH
G
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
1
Publication Order Number:
NTD4810NH/D
NTD4810NH
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
3.0
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient − Steady State (Note 1)
RqJA
75
Junction−to−Ambient − Steady State (Note 2)
RqJA
117
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
27
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
"100
nA
2.5
V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
1.5
5.2
VGS = 10 to
11.5 V
ID = 30 A
8.0
ID = 15 A
7.8
VGS = 4.5 V
ID = 30 A
14.1
ID = 15 A
13.2
VDS = 15 V, ID = 15 A
mV/°C
10
mW
16.7
9.0
S
1225
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
145
Total Gate Charge
QG(TOT)
8.9
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
280
12
nC
2.5
3.6
3.9
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
22.5
nC
10.6
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
19.2
11.7
tf
3.6
td(on)
6.2
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
18
18.5
2.2
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTD4810NH
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.88
1.2
V
TJ = 125°C
0.79
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
13.4
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
ns
9.1
4.3
QRR
6.7
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.75
PACKAGE PARASITIC VALUES
TA = 25°C
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3
1.88
W
NTD4810NH
TYPICAL PERFORMANCE CURVES
70
10 V
8V
6V
50
4.5 V
TJ = 25°C
4.2 V
5V
40
4V
30
3.8 V
20
3.5 V
10
3.2 V
3V
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5.5
5
60
50
40
30
TJ = 125°C
20
TJ = 25°C
10
TJ = −55°C
0
6
4
3
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.025
ID = 30 A
TJ = 25°C
0.023
0.021
0.019
0.017
0.015
0.013
0.011
0.009
0.007
4
6
5
7
8
10
9
11
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.025
TJ = 25°C
0.020
VGS = 4.5 V
0.015
0.010
VGS = 11.5 V
0.005
0
15
20
25
30
40
35
45
50
55
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100,000
2.0
VGS = 0 V
ID = 30 A
VGS = 10 V
10,000
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
2
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
60
1.0
0.5
0
−50 −25
TJ = 150°C
1000
TJ = 125°C
100
10
0
25
50
75
100
125
150
175
4
8
12
16
20
24
28
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
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4
32
NTD4810NH
TYPICAL PERFORMANCE CURVES
15
VGS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
1750
Ciss
1250
1000
Crss
750
500
Coss
250
0
15
Crss
10
5
0
5
VGS
VDS
10
15
25
20
30
VDS
12
VGS
8
6
Q2
Q1
4
3
0
0
0
2
4
6
8 10 12 14 16 18 20
QG, TOTAL GATE CHARGE (nC)
22
24
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
30
1000
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100
tr
tf
td(off)
10
td(on)
1
10
RG, GATE RESISTANCE (OHMS)
25
100
15
10
5
100 ms
1
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
10 ms
VGS = 20 V
SINGLE PULSE
TC = 25°C
0.6
0.7
0.8
0.9
1.0
1.1
Figure 10. Diode Forward Voltage vs. Current
1000
10
0.5
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
100
VGS = 0 V
TJ = 25°C
20
0
0.4
1
I D, DRAIN CURRENT (AMPS)
16
QT
9
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t, TIME (ns)
20
TJ = 25°C
12
Ciss
1500
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
VDS = 0 V
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2000
70
ID = 21 A
60
50
40
30
20
10
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
175
NTD4810NH
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
25°C
100°C
125°C
10
1
0.1
10
100
PULSE WIDTH (ms)
1
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E−03
1.0E−02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E−01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4810NHT4G
DPAK
(Pb−Free)
2500 Tape & Reel
NTD4810NH−1G
IPAK
(Pb−Free)
75 Units/Rail
NTD4810NH−35G
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb−Free)
75 Units/Rail
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
NTD4810NH
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
2 PL
0.13 (0.005)
G
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
T
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
3 IPAK, STRAIGHT LEAD
CASE 369AC−01
ISSUE O
B
V
C
E
R
DIM
A
B
C
D
E
F
G
H
J
K
R
V
W
A
SEATING PLANE
K
W
F
J
G
H
D
NOTES:
1.. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2.. CONTROLLING DIMENSION: INCH.
3. SEATING PLANE IS ON TOP OF
DAMBAR POSITION.
4. DIMENSION A DOES NOT INCLUDE
DAMBAR POSITION OR MOLD GATE.
3 PL
0.13 (0.005) W
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7
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.043
0.090 BSC
0.034 0.040
0.018 0.023
0.134 0.142
0.180 0.215
0.035 0.050
0.000 0.010
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.09
2.29 BSC
0.87
1.01
0.46
0.58
3.40
3.60
4.57
5.46
0.89
1.27
0.000
0.25
NTD4810NH
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
H
D
G
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
T
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NTD4810NH/D