Zowie EGF30D Surface mount glass passivated junction high efficient rectifier Datasheet

EGF30A THRU EGF30M
SURFACE MOUNT GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER
Reverse Voltage - 50 to 1000 Volts
EEDD
T
T
N
N
E
E
T
PPAAT
Forward Current - 3.0 Amperes
DO-214AA
FEATURES
0.150(3.80)
0.083(2.12)
0.130(3.30)
0.077(1.95)
*
*
*
*
*
*
*
GPRC (Glass Passivated Rectifier Chip) inside
Glass passivated cavity-free junction
Ideal for surface mount automotive applications
Superfast recovery time for high efficiency
Built-in strain relief
Easy pick and place
o
High temperature soldering guaranteed: 260 C/10 seconds,
at terminals
* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
0.187(4.75)
0.167(4.24)
0.016(0.40)
0.006(0.15)
0.102(2.60)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.236(6.00)
0.197(5.00)
MECHANICAL DATA
Case : JEDEC DO-214AA molded plastic over passivated chip
Terminals : Solder plated , solderable per MIL-STD-750,
Method 2026
Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.004 ounes , 0.12 gram
*Dimensions in inches and (millimeters)
TM
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
EGF30
Ratings at 25 C ambient temperature
SYMBOLS
unless otherwise specified.
A
B
D
F
G
J
K
M
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
300
400
600
800
1000
Volts
Maximum RMS voltage
VRMS
35
70
140
210
280
420
560
700
Volts
VDC
50
100
200
300
400
600
800
1000
Volts
Maximum DC blocking voltage
o
Maximum average forward rectified current TA=75 C
I (AV)
3.0
Amps
Peak forward surge current 8.3ms single half sine-wave
IFSM
115
105
Amps
1.7
Volts
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0 A
VF
o
1.25
IR
5
50
120
5
120
-
uA
Maximum reverse recovery time (NOTE 1)
trr
50
75
nS
Typical junction capacitance (NOTE 2)
CJ
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
o
TA=125 C
o
TA=150 C
1.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
R
R
75
47
12
JA
JL
TJ,TSTG
pF
-65 to +175
o
-55 to +150
C/W
o
C
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas.
REV. : 0
Zowie Technology Corporation
RATINGS AND CHARACTERISTIC CURVES EGF30A THRU EGF30M
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
120
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
2.0
RESISTIVE OR
INDUCTIVE LOAD
1.5
EGF30A~EGF30G
1.0
EGF30J~EGF30M
0.5
0
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
100
80
EGF30J~EGF30M
40
20
0
0
25
50
75
100
125
150
1
175
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
o
100
10.00
PULSE WIDTH=300uS
1% DUTY CYCLE
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
EGF30A~EGF30G
60
1.00
0.10
0.01
0.2
EGF30J~EGF30M
EGF30G
EGF30A~EGF30F
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
1
o
TJ=125 C
o
TJ=150 C
0.1
0
1.8
20
40
60
80
100 110
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
o
TJ = 25 C
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, VOLTS
REV. : 0
FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
o
JUNCTION CAPACITANCE, pF
TRANSIENT THERMAL IMPEDANCE( C/W)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
200
40
100
10
1
0.1
0.01
0.10
1.0
10
100
t , PULSE DURATION, sec
Zowie Technology Corporation
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