BCD MBR1060CT-E1 High voltage power schottky rectifier Datasheet

Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Main Product Characteristics
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage operation, and particularly, in high frequency circuits where
low switching losses and low noise are required.
IF (AV)
2×5A
VRRM
60V
TJ
150oC
VF (max)
0.65V
MBR1060C is available in TO-220-3, TO-220-3 (2)
and TO-220F-3 packages.
Mechanical Characteristics
Features
·
·
·
·
·
·
·
·
High Surge Capacity
150oC Operating Junction Temperature
10A Total (5A Each Diode Leg)
Guard-ring for Stress Protection
Pb-free Package
·
·
·
Applications
·
·
·
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
1.9 Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
Finish: All External Surfaces Corrosion Resistant
and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260oC Maximum for 10 Seconds
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR1060C
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
1
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Pin Configuration
T Package
(TO-220-3 (2))
(TO-220-3) (Optional)
3
A2
3
A2
2
K
2
K
1
A1
1
A1
TF Package
(TO-220F-3)
3
A2
2
K
1
A1
Figure 2. Pin Configuration of MBR1060C (Top View)
A1
K
A2
Figure 3. Internal Structure of MBR1060C
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
2
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Ordering Information
MBR1060C
Circuit Type
E1: Lead Free
G1: Green
Package
T: TO-220-3 (2)
TO-220-3 (Optional)
TF: TO-220F-3
Blank: Tube
Part Number
Package
Lead Free
TO-220-3 (2) MBR1060CT-E1
TO-220F-3
-
MBR1060CTF-E1
Marking ID
Green
Lead Free
Green
Packing Type
MBR1060CT-G1
MBR1060CT-E1
MBR1060CT-G1
Tube
MBR1060CTF-G1
MBR1060CTF-E1
MBR1060CTF-G1
Tube
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. Products with
"G1" suffix are available in green packages.
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
3
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60
V
Average Rectified Forward Current
(Rated VR) TC=140oC
IF (AV)
5
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20kHz) TC=139oC
IFRM
10
A
Non Repetitive Peak Surge Current (Surge Applied at Rated
Load Conditions Half Wave, Single Phase, 60Hz)
IFSM
100
A
TJ
150
o
Storage Temperature Range
TSTG
-55 to 150
oC
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/µs
ESD (Machine Model=C)
>400
V
ESD (Human Body Model=3B)
>8000
V
Operating Junction Temperature (Note 2)
C
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ<1/θJA.
Thermal Characteristics
Parameter
Symbol
θJC
Condition
Junction to Case
Maximum Thermal Resistance
θJA
Junction to Ambient
Mar. 2011 Rev. 1. 3
Value
TO-220-3/
TO-220-3 (2)
3.0
TO-220F-3
3.5
TO-220-3/
TO-220-3 (2)
60
TO-220F-3
60
Unit
o
C/W
BCD Semiconductor Manufacturing Limited
4
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Electrical Characteristics (Each Diode Leg)
Parameter
Maximum Instantaneous
Voltage Drop (Note 3)
Symbol
Forward
Maximum Instantaneous Reverse Current (Note 3)
VF
IR
Condition
Value
IF=5A, TC=25oC
0.75
IF=5A, TC=125oC
0.65
IF=10A, TC=25oC
0.90
IF=10A, TC=125oC
0.80
Rated DC Voltage, TC=25oC
0.1
Rated DC Voltage, TC=125oC
15.0
Unit
V
mA
Note 3: Pulse Test: Pulse Width=300µs, Duty Cycle≤2.0%.
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
5
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Typical Performance Characteristics
IF, Instantaneous Forward Current (A)
100
10
1
0.1
o
25 C
125oC
o
150 C
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
VF, Instantaneous Forward Voltage (V)
Figure 4. Typical Forward Voltage Per Diode
100000
IR, Reverse Current (µA)
10000
1000
o
25 C
100
o
125 C
o
150 C
10
1
0.1
0
10
20
30
40
50
60
VR, Reverse Voltage (V)
Figure 5. Typical Reverse Current Per Diode
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
6
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Typical Performance Characteristics (Continued)
10
Average Forward Current (A)
9
8
7
6
5
4
3
2
1
0
100
105
110
115
120
125
130
135
140
145
150
155
160
o
Case Temperature ( C)
Figure 6. Average Forward Current vs. Case Temperature (Per Diode)
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
7
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Mechanical Dimensions
TO-220-3
Unit: mm(inch)
(Optional)
2.580(0.102)
3.380(0.133)
0.550(0.022)
1.350(0.053)
1.160(0.046)
1.760(0.069)
14.230(0.560)
16.510(0.650)
φ1.500(0.059)
27.880(1.098)
30.280(1.192)
8.520(0.335)
9.520(0.375)
1.850(0.073)
9.660(0.380)
10.660(0.420)
φ3.560(0.140)
4.060(0.160)
3°
0.200(0.008)
7°
3.560(0.140)
4.820(0.190)
2.080(0.082)
2.880(0.113)
7°
0.381(0.015)
60°
0.813(0.032)
8.763(0.345)
60°
0.381(0.015)
2.540(0.100)
2.540(0.100)
Mar. 2011 Rev. 1. 3
0.356(0.014)
0.406(0.016)
BCD Semiconductor Manufacturing Limited
8
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Mechanical Dimensions (Continued)
TO-220-3 (2)
Unit: mm(inch)
9.800(0.386)
10.200(0.402)
∅
∅3.560(0.140)
3.640(0.143)
0.600(0.024)
REF
11.100(0.437)
REF
1.200(0.047)
1.400(0.055)
1.200(0.047)
1.400(0.055)
6.300(0.248)
6.700(0.264)
1.620(0.064)
1.820(0.072)
9.000(0.354)
9.400(0.370)
3°
4.400(0.173)
4.600(0.181)
2.200(0.087)
2.500(0.098)
3°
0.700(0.028)
0.900(0.035)
2.540(0.100)
REF
12.600(0.496)
13.600(0.535)
1.170(0.046)
1.390(0.055)
9.600(0.378)
10.600(0.417)
3.000(0.118)
REF
3°
0.400(0.016)
0.600(0.024)
2.540(0.100)
REF
Mar. 2011 Rev. 1. 3
BCD Semiconductor Manufacturing Limited
9
Data Sheet
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR1060C
Mechanical Dimensions (Continued)
TO-220F-3
9.700(0.382)
10.300(0.406)
ٛ 3.000(0.119)
∅
3.550(0.140)
Unit: mm(inch)
3.000(0.119)
3.400(0.134)
6.900(0.272)
7.100(0.280)
2.350(0.093)
2.900(0.114)
3.370(0.133)
3.900(0.154)
14.700(0.579)
16.000(0.630)
2.790(0.110)
4.500(0.177)
4.300(0.169)
4.900(0.193)
1.000(0.039)
1.400(0.055)
1.100(0.043)
1.500(0.059)
12.500(0.492)
13.500(0.531)
0.550(0.022)
0.900(0.035)
2.540(0.100)
2.540(0.100)
Mar. 2011 Rev. 1. 3
0.450(0.018)
0.600(0.024)
BCD Semiconductor Manufacturing Limited
10
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
IMPORTANT NOTICE
IMPORTANT
NOTICE
BCD Semiconductor
BCD
Semiconductor Manufacturing
Manufacturing Limited
Limited reserves
reserves the
the right
right to
to make
make changes
changes without
without further
further notice
notice to
to any
any products
products or
or specifispecifications herein.
cations
herein. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not assume
assume any
any responsibility
responsibility for
for use
use of
of any
any its
its products
products for
for any
any
particular purpose,
particular
purpose, nor
nor does
does BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited assume
assume any
any liability
liability arising
arising out
out of
of the
the application
application or
or use
use
of any
of
any its
its products
products or
or circuits.
circuits. BCD
BCD Semiconductor
Semiconductor Manufacturing
Manufacturing Limited
Limited does
does not
not convey
convey any
any license
license under
under its
its patent
patent rights
rights or
or
other rights
other
rights nor
nor the
the rights
rights of
of others.
others.
MAIN SITE
SITE
MAIN
- Headquarters
BCD
Semiconductor Manufacturing Limited
BCD
Semiconductor
Manufacturing Limited
- Wafer
Fab
No.
1600, Zi
Xing Road,
Shanghai ZiZhu
Science-basedLimited
Industrial Park, 200241, China
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Tel:
Fax: +86-21-24162277
800,+86-21-24162266,
Yi Shan Road, Shanghai
200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
REGIONAL SALES OFFICE
Shenzhen OfficeSALES OFFICE
REGIONAL
- Wafer
FabSemiconductor Manufacturing Limited
BCD
Shanghai
SIM-BCD
Semiconductor Manufacturing Co., Ltd.
- IC Design
Group
800 Yi
Shan Road,
Shanghai
200233,
China Corporation
Advanced
Analog
Circuits
(Shanghai)
Tel: +86-21-6485
1491,YiFax:
0008200233, China
8F, Zone B, 900,
Shan+86-21-5450
Road, Shanghai
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
Taiwan Office
Shanghai
Semiconductor Manufacturing Co., Ltd., Shenzhen Office
BCD Taiwan
Semiconductor
Shenzhen SIM-BCD
Office
Office (Taiwan) Company Limited
Unit
A Room
1203, Skyworth
Bldg., Gaoxin
Ave.1.S., Nanshan
Shenzhen,
4F, 298-1,
Guang Road,(Taiwan)
Nei-Hu District,
Taipei,
Shanghai
SIM-BCD
Semiconductor
Manufacturing
Co., Ltd.District,
Shenzhen
Office
BCDRui
Semiconductor
Company
Limited
China
Taiwan
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Tel:
+86-755-8826
Tel: +886-2-2656
2808
Room
E, 5F, Noble 7951
Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Taiwan
Fax:
+86-755-88267951
7865
Fax: +886-2-2656
28062808
Tel: +86-755-8826
Tel: +886-2-2656
Fax: +86-755-8826 7865
Fax: +886-2-2656 2806
USA Office
BCD Office
Semiconductor Corp.
USA
30920Semiconductor
Huntwood Ave.Corporation
Hayward,
BCD
CA 94544,
USA Ave. Hayward,
30920
Huntwood
Tel :94544,
+1-510-324-2988
CA
U.S.A
Fax:: +1-510-324-2988
+1-510-324-2788
Tel
Fax: +1-510-324-2788
Similar pages