IRFH7936PbF HEXFET® Power MOSFET Applications l l Synchronous MOSFET for Notebook Processor Power Synchronous Rectifer MOSFET for Isolated DC-DC Converters in Networking Systems VDSS RDS(on) max Qg 30V 4.8mΩ@VGS = 10V 17nC Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering PQFN 5X6 mm Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 16 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 54 160 Power Dissipation 3.1 IDM PD @TA = 70°C TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 20 c g Power Dissipation g PD @TA = 25°C Units A W 2.0 g W/°C 0.025 -55 to + 150 °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient Notes through 1 g Typ. Max. ––– 5.6 ––– 40 Units °C/W are on page 9 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7936PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS ∆ΒVDSS/∆TJ RDS(on) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 48 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 0.022 4.1 6.0 1.8 -6.3 ––– ––– ––– ––– ––– 17 4.5 2.0 5.5 5.0 7.5 9.0 1.5 17 12 19 7.0 2360 450 210 Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 20A 4.8 mΩ 6.8 VGS = 4.5V, ID = 16A 2.35 V VDS = VGS, ID = 50µA ––– mV/°C VDS = 24V, VGS = 0V 1.0 µA 150 VDS = 24V, VGS = 0V, TJ = 125°C 100 VGS = 20V nA -100 VGS = -20V ––– S VDS = 15V, ID = 16A 26 VDS = 15V ––– ––– VGS = 4.5V nC ––– ID = 16A ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V 2.3 Ω VDD = 15V, VGS = 4.5V ––– ––– ID = 16A ns RG=1.8Ω ––– See Fig.15 ––– VGS = 0V ––– pF VDS = 15V ––– ––– ƒ = 1.0MHz e e Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR c Max. 28 16 Typ. ––– ––– d Units mJ A Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time ISM c VSD trr Qrr ton 2 Min. Typ. Max. Units ––– ––– 3.9 ––– ––– 160 ––– ––– ––– ––– 14 15 1.0 21 23 A V ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 16A, VGS = 0V TJ = 25°C, IF = 16A, VDD = 15V See Fig.16 di/dt = 300A/µs e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7936PbF 1000 1000 ID, Drain-to-Source Current (A) Tj = 25°C TOP 100 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V ≤60µs PULSE WIDTH Tj = 150°C ID, Drain-to-Source Current (A) ≤60µs PULSE WIDTH TOP 100 10 1 BOTTOM VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 10 2.7V 2.7V 1 0.1 0.1 1 10 0.1 100 1000 100 2.0 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 20A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1.0 0.5 1 2 3 4 5 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) www.irf.com © 2013 International Rectifier -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature August 16, 2013 IRFH7936PbF 10000 14.0 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd VGS , Gate-to-Source Voltage (V) ID= 16A C, Capacitance (pF) Coss = Cds + Cgd Ciss 1000 Coss Crss 12.0 VDS= 24V VDS= 15V 10.0 8.0 6.0 4.0 2.0 100 0.0 1 10 100 0 5 VDS, Drain-to-Source Voltage (V) 20 ID, Drain-to-Source Current (A) 1000 100 30 35 40 45 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150°C 10 25 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 ISD, Reverse Drain Current (A) 15 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage T J = 25°C 1 100µsec 1msec 10 0.1 10msec DC 1 T A = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 www.irf.com © 2013 International Rectifier 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area August 16, 2013 IRFH7936PbF 2.5 VGS(th) , Gate Threshold Voltage (V) 20 ID, Drain Current (A) 15 10 5 2.0 ID = 50µA 1.5 1.0 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T A , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJA ) °C/W 100 D = 0.50 10 0.20 0.10 R1 R1 0.05 1 τJ 0.02 0.01 τJ τ1 R2 R2 R3 R3 R4 R4 τA τ2 τ1 τ2 τ3 τ3 τ4 Ri (°C/W) τi (sec) 1.6431 0.000308 τA τ4 Ci= τi/Ri Ci= τi/Ri 0.1 1E-005 0.0001 0.001 0.017766 16.903 0.9436 16.855 40.8 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 4.6179 0.01 0.1 1 10 100 1000 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier August 16, 2013 14 220 ID = 20A 12 10 8 T J = 125°C 6 4 T J = 25°C 2 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH7936PbF ID TOP 3.0A 5.1A BOTTOM 16A 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 25 50 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage V DS V GS VDS + V - DD IAS 20V 125 150 RD D.U.T. RG DRIVER D.U.T RG 100 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V L 75 Starting T J , Junction Temperature (°C) + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS td(on) I AS Fig 14b. Unclamped Inductive Waveforms 6 tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7936PbF D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • dv/dt controlled by RG • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2µF .3µF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit 7 www.irf.com © 2013 International Rectifier Fig 18. Gate Charge Waveform August 16, 2013 IRFH7936PbF PQFN 5x6 Option "E" Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER XYWWX XXXXX MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier August 16, 2013 IRFH7936PbF PQFN Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.22mH, RG = 25Ω, IAS = 16A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Revision History Date 08/08/2013 Comments •Updated the package drawing, on page 1. •Updated the package outline drawing, on page 8. •This drawing change is related to PCN "Hana-GTBF-GEM 5x6 PQFN Public." IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier August 16, 2013