MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 12 Vdc Collector −Base Voltage VCBO 20 Vdc Emitter −Base Voltage VEBO 2.5 Vdc Collector Current − Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 200 1.14 W mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 300 1.71 W mW/°C Storage Temperature Range Tstg −55 to +150 °C 2 BASE 1 EMITTER MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−92 CASE 29−11 STYLE 1 1 2 MPS 5179 AYWW G G 3 MPS5179 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MPS5179 MPS5179G MPS5179RLRA MPS5179RLRAG MPS5179RLRP MPS5179RLRPG *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 1 Package Shipping † TO−92 5000 Units/Box TO−92 (Pb−Free) 5000 Units/Box TO−92 2000/Tape & Reel TO−92 (Pb−Free) 2000/Tape & Reel TO−92 2000/Tape & Ammo TO−92 2000/Tape & Ammo (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MPS5179/D MPS5179 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) VCEO(sus) 12 − Vdc Collector −Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) V(BR)CBO 20 − Vdc Emitter −Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) V(BR)EBO 2.5 − Vdc − − 0.02 1.0 hFE 25 250 − Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) − 0.4 Vdc Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) − 1.0 Vdc fT 900 2000 MHz Collector−Base Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Ccb − 1.0 pF Small Signal Current Gain (IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) hfe 25 300 − OFF CHARACTERISTICS Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150°C) mAdc ICBO ON CHARACTERISTICS DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 1) (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) 1. fT is defined as the frequency at which |hfe| extrapolates to unity. http://onsemi.com 2 MPS5179 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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