DSK GBU8A Silicon bridge rectifier Datasheet

Diode Semiconductor Korea
GBU8A - - - GBU8M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 8.0A
SILICON BRIDGE RECTIFIERS
FEATURES
GBU
Rating to 1000V PRV
Surge overload rating to 200 Amperes peak
22.3± 0.3
3.7± 0.35
4 45°
3.8± 0.2
Lead solderable per MIL-STD-202 method 208
-
AC
P.
TY
2.2± 0.2
.9
R1
plastic technique results in inexpensive product
1.9± 0.3
Reliable low cost construction utilizing molded
18.7± 0.2
7.9± 0.2
Ideal for printed circuit board
+
2.5± 0.2
2.4± 0.2
18.3± 0.5
Glass passivated junctions
1.2± 0.15
5.0± 0.3
0.5± 0.15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
GBU
8A
GBU
8B
GBU
8D
GBU
8G
GBU
8J
GBU
8K
GBU
8M
UNITS
Maximum recurrent peak reverse voltage
V RRM
50
100
200
400
600
800
1000
V
Maximum RMS voltage
V RMS
35
70
140
280
420
560
700
V
Maximum DC blocking voltage
V DC
50
100
200
400
600
800
1000
V
Maximum average forw ard
output current
@TC=100
IF(AV)
8.0
A
IFSM
200.0
A
VF
1.0
V
5.0
μA
0.5
mA
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
@ 4.0 A
Maximum reverse current
at rated DC blocking voltage
@TA=25
@TA=125
Operating junction temperature range
Storage temperature range
IR
TJ
- 55 ---- + 150
TSTG
- 55 ---- + 150
www.diode.kr
Diode Semiconductor Korea
GBU8A - - - GBU8M
FIG.2 -- MAXIMUM FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
FIG.1 -- TYPICAL FORWARD CURRENT DERATING CURVE
8
6
4
2
0
MOUNTES ON 4:4 INCH CPUFER
PC BOARD
0.5"(12.7mm) Lead length
25
0
50
75
100
125
150
175
300
250
200
150
100
50
0
1
CASE TEMPERATURE,
INSTANTANEOUS REVERSE CURRENT,
MICRO AMPERES
40
20
10
4.0
2.0
TJ=25
Pulse Width
=300µS
0.4
0.2
0.1
0.7
0.8
0.9
1.0
1.1
1.2
5
10
20
50
100
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC
100
1.0
2
NUMBER OF CYCLES AT 60HZ
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
1.3
1.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
100
TJ=125
10
1
TJ=25
.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER ELEMENT
400
CAPACITANCE, pF
INSTANTANEOUS FORWARD CURRENT,
AMPERES
350
100
TJ=25
50
10
1
10
100
REVERSE VOLTAGE, VOLTS
www.diode.kr
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