FS6128-07 PLL Clock Generator IC with VXCO 1.0 Key Features • • • • • • • • Matches MK3727 center frequency characteristics Phase-locked loop (PLL) device synthesizes output clock frequency from crystal oscillator or external reference clock On-chip tunable voltage-controlled crystal oscillator (VCXO) allows precise system frequency tuning 3.3V supply voltage Very low phase noise PLL Use with “pullable” 14pF crystals – no external pad-ding capacitors required Small circuit board footprint (8-pin 0.150” SOIC) Custom frequency selections available - contact your local ON Semiconductor sales representative for more information 2.0 Description The FS6128 is a monolithic CMOS clock generator IC designed to minimize cost and component count in digital video/audio systems. At the core of the FS6128 is circuitry that implements a voltage-controlled crystal oscillator (VCXO) when an external resonator (nominally 13.5MHz) is attached. The VCXO allows device frequencies to be precisely adjusted for use in systems that have frequency matching requirements, such as digital satellite receivers. A high-resolution phase-locked loop generates an output clock (CLK) through a post-divider. The CLK frequency is ratiometrically derived from the VCXO frequency. The locking of the CLK frequency to other system reference frequencies can eliminate unpredictable artifacts in video systems and reduce electromagnetic interference (EMI) due to frequency harmonic stacking. 1 VDD 2 XTUNE 3 VSS 4 FS6128-07 XIN 8 XOUT 7 VSS 6 VDD 5 CLK Figure 1: Pin Configuration – 8-pin (0.150”) SOIC Table 1: Crystal / Output Frequencies Device fXIN (MHz) FS128-07 13.500 CLK (MHz) 27.000 Note: Contact ON Semiconductor for custom PLL frequencies. ©2008 SCILLC. All rights reserved. May 2008 – Rev. 2 Publication Order Number: FS6128-07/D FS6128-07 XIN VCXO PLL DIVIDER CLK XOUT XTUNE FS6128-07 Figure 2: Block Diagram Table 2: Pin Descriptions Pin Type Name Description 1 AI XIN VCXO feedback 2 P VDD Power supply (+3.3V) 3 AI XTUNE VCXO tune 4 P VSS Ground 5 DO CLK Clock output 6 VDD Power supply (+3.3V) 7 DO VSS Ground 8 AO XOUT VCXO drive Key: AI = Analog Input; AO = Analog Output; DI = Digital Input; DIU = Input With Internal Pull-Up; DID = Input With Internal Pull-Down; DIO = Digital Input/Output; DI-3 = Three-Level Digital Input, DO = Digital Output; P = Power/Ground; # = Active Low Pin 3.0 Functional Block Diagram 3.1 Voltage-Controlled Crystal Oscillator (VCXO) The VCXO provides a tunable, low-jitter frequency reference for the rest of the FS6128 system components. Loading capacitance for the crystal is internal to the FS6128. No external components (other than the resonator itself) are required for operation of the VCXO. Continuous fine-tuning of the VCXO frequency is accomplished by varying the voltage on the XTUNE pin. The value of this voltage controls the effective capacitance presented to the crystal. The actual amount that this load capacitance change will alter the oscillator frequency depends on the characteristics of the crystal as well as the oscillator circuit itself. It is important that the crystal load capacitance is specified correctly to “center” the tuning range. See Table 5. A simple formula to obtain the “pulling” capability of a crystal oscillator is: where: C0 = the shunt (or holder) capacitance of the crystal C1 = the motional capacitance of the crystal CL1 and CL2 = the two extremes (minimum and maximum) of the applied load capacitance presented by the FS6128 Rev. 2 | Page 2 of 6 | www.onsemi.com FS6128-07 EXAMPLE: A crystal with the following parameters is used: C1 = 0.025pF and C0 = 6pF. Using the minimum and maximum CL1 = 10pF, and CL2 = 20pF, the tuning range (peak-to-peak) is: 3.2 Phase-Locked Loop (PLL) The on-chip PLL is a standard frequency- and phase locked loop architecture. The PLL multiplies the reference oscillator frequency to the desired output frequency by a ratio of integers. The frequency multiplication is exact with a zero synthesis error (unless otherwise specified). 4.0 Electrical Specifications Table 3: Absolute Maximum Ratings Parameter Symbol Min. Max. Units Supply voltage (Vss = ground) VDD VSS – 0.5 7 V Input voltage, DC VI VSS – 0.5 VDD + 0.5 V Output voltage, DC VO VSS – 0.5 VDD + 0.5 V Input clamp current, DC (VI < 0 or VI > VDD) IIK -50 50 mA Output clamp current, DC (VI < 0 or VI > VDD) IOK -50 50 mA Storage temperature range (non-condensing) TS -65 150 °C Ambient temperature range, under bias TA -55 125 °C Junction temperature TJ 125 °C Lead temperature (soldering, 10s) 260 Per IPC/JEDEC J-STD-020B Input static discharge voltage protection (MLD-STD 883E, Method 3015.7) 2 kv Note: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only and functional operation of the device at these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance, functionality and reliability. CAUTION: ELECTROSTATIC SENSITIVE DEVICE Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high energy electrostatic discharge. Table 4: Operating Conditions Parameter Supply voltage Ambient operating temperature range Crystal resonator frequency Symbol VDD TA fXTAL Conditions/Descriptions 3.3V ± 10% Functional mode Min. 3.0 0 12 Table 5: DC Electrical Specifications Rev. 2 | Page 3 of 6 | www.onsemi.com Typ. 3.3 13.5 Max. 3.6 70 18 Units V °C MHz FS6128-07 Parameter Symbol Conditions/Descriptions Min. Typ. Max. Units Overall Supply current, dynamic, with loaded outputs IDD fXAL = 13.5MHz; CL = 10pF; VDD = 3.6V 30 mA Supply current, static IDD XIN = 0V; VDD = 3.6V 3 mA Voltage-Controlled Crystal Oscillator (contact factory for approved crystal sources or other application assistance) Order crystal for this capacitance Crystal loading capacitance at center tuning 14 pF CL(xtal) (parallel load) at desired center voltage frequency Specified motional capacitance of the Crystal resonator motional capacitance C1 25 fF crystal will affect pullability (see text) XTUNE effective range 0 3 V Synthesized load capacitance min. CL1 @V(XTUNE) = minimum value 10 pF Synthesized load capacitance max. CL2 @V(XTUNE) = maximum value 20 pF fXTAL = 13.5MHz; CL(xtal) = 14pF; C1(xtal) VCXO tuning range 300 ppm = 25fF (peak-to-peak) Note: positive change of XTUNE = VCXO tuning characteristic 150 ppm/V positive change of VCXO frequency Crystal drive level RXTAL = 20Ω; CL = 20pF 200 μW Clock Output (CLK) High-level output source current* IOH VO = 2.0V -40 mA Low-level output sink current* IOL VO = 0.4V 17 mA ZOH VO = 0.1VDD; output driving high 25 Output impedance* Ω VO = 0.1VDD; output driving low ZOL 25 Short circuit source current* IOSH VO = 0V; shorted for 30s, max. -55 mA Short circuit sink current* IOSL VO = 3.3V; shorted for 30s, max. 55 mA Note: Unless otherwise stated VDD = 3.3V ±10% no load on any output and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ±3σ from typical. Negative currents indicate current flows out of the device. Table 6: AC Timing Specifications Parameter Symbol Overall VCXO stabilization time* tVCXOSTB PLL stabilization time* tPLLSTB Synthesis error Clock Output (CLK) Duty cycle* Conditions/Descriptions From power valid From VCXO stable (Unless otherwise noted in frequency table) Min. Typ. Max. Units 0 ms μs ppm 10 100 Ratio of high pulse width (as measured from rising edge to next 45 55 % falling edge at VDD/2) to one clock period Jitter, period (peak-peak)* From rising edge to next rising edge at VDD/2, CL = 10pF 200 ps tj(ΔP) From 0-500μs at VDD/2, CL = 10pF compared to ideal clock source 100 ps tj(LT) Jitter, long term (σγ(τ))* Rise time* tr VDD = 3.3V; VO = 0.3V to 3.0V; CL = 10pF 1.7 ns Fall time* tf VDD = 3.3V; VO = 3.0V to 0.3V; CL = 10pF 1.7 ns Note: Unless otherwise stated, VDD = 3.3V ±10%, no load on any output, and ambient temperature range TA = 0°C to 70°C. Parameters denoted with an asterisk (*) represent nominal characterization data and are not production tested to any specific limits. Where given, MIN and MAX characterization data are ±3σ from typical. Rev. 2 | Page 4 of 6 | www.onsemi.com FS6128-07 5.0 Package Information Table 7: 8-pin SOIC (0.150") Package Dimensions Dimensions Inches Millimeters Min. Max. Min. Max. A 0.061 0.068 1.55 1.73 A1 0.004 0.0098 0.102 0.249 A2 0.055 0.061 1.40 1.55 B 0.013 0.019 0.33 0.49 C 0.0075 0.0098 0.191 0.249 D 0.189 0.196 4.80 4.98 E 0.150 0.157 3.81 3.99 e 0.050 BSC 1.27 BSC H 0.230 0.244 5.84 6.20 h 0.010 0.016 0.25 0.41 L 0.016 0.035 0.41 0.89 0° 8° 0° 8° Θ Table 8: 8-pin SOIC (0.150") Package Characteristics Parameter Thermal impedance, junction to free-air 8-pin 0.150” SOIC Lead inductance, self Lead inductance, mutual Lead capacitance, bulk Symbol ΘJA L11 L12 C11 Conditions/Descriptions Air flow = 0 m/s Corner lead Center lead Any lead to any adjacent lead Andy lead to VSS Rev. 2 | Page 5 of 6 | www.onsemi.com Typ. 110 2.0 1.6 0.4 0.27 Units °C/W nH nH pF FS6128-07 6.0 Ordering Information Part Number FS6128-07-XTD FS6128-07-XTP Package 8-pin (0.150”) SOIC 8-pin (0.150”) SOIC Shipping Configuration Tube/Tray Tape & Reel Temperature Range 0°C to 70°C (commercial) 0°C to 70°C (commercial) 7.0 Revision History Revision 1 2 Date March 2004 May 2008 Modification Initial release Update to new ON Semiconductor template ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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