2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz. High Voltage : VCEO=230V Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to 2SA1962/FJA4213. Thermal and electrical Spice models are available Same transistor is also available in: --TO264 package, 2SC5200/FJL4315 : 150 watts --TO220 package, FJP5200 : 80 watts --TO220F package, FJPF5200 : 50 watts Absolute Maximum Ratings* Symbol TO-3P 1 1.Base 2.Collector 3.Emitter Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage 230 V BVCEO Collector-Emitter Voltage 230 V BVEBO Emitter-Base Voltage 5 V IC Collector Current(DC) 15 A IB Base Current 1.5 A PD Total Device Dissipation(TC=25°C) Derate above 25°C 130 1.04 W W/°C TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Symbol RθJC Ta=25°C unless otherwise noted Parameter Thermal Resistance, Junction to Case Max. Units 0.96 °C/W * Device mounted on minimum pad size hFE Classification Classification R O hFE1 55 ~ 110 80 ~ 160 © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 www.fairchildsemi.com 1 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor July 2008 a Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC=5mA, IE=0 230 V BVCEO Collector-Emitter Breakdown Voltage IC=10mA, RBE=∞ 230 V BVEBO Emitter-Base Breakdown Voltage IE=5mA, IC=0 5 V ICBO Collector Cut-off Current VCB=230V, IE=0 5.0 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 5.0 µA hFE1 DC Current Gain VCE=5V, IC=1A 55 hFE2 DC Current Gain VCE=5V, IC=7A 35 VCE(sat) Collector-Emitter Saturation Voltage IC=8A, IB=0.8A 0.4 3.0 V VBE(on) Base-Emitter On Voltage VCE=5V, IC=7A 1.0 1.5 V fT Current Gain Bandwidth Product VCE=5V, IC=1A 30 MHz Cob Output Capacitance VCB=10V, f=1MHz 200 pF 160 60 * Pulse Test: Pulse Width=20µs, Duty Cycle≤2% Ordering Information Part Number Marking Package Packing Method 2SC5242RTU C5242R TO-3P TUBE hFE1 R grade 2SC5242OTU C5242O TO-3P TUBE hFE1 O grade FJA4313RTU J4313R TO-3P TUBE hFE1 R grade FJA4313OTU J4313O TO-3P TUBE hFE1 O grade © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 Remarks www.fairchildsemi.com 2 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Electrical Characteristics* T =25°C unless otherwise noted 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Typical Characteristics 16 IB=200mA IB = 180mA IB = 160mA IB = 140mA IB = 120mA 12 o IB = 100mA 10 o Tj=125 C hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 14 IB = 80mA 8 IB = 60mA 6 IB = 40mA 4 2 Tj=25 C Vce=5V 100 o Tj=-25 C 10 IB = 0 0 0 2 4 6 8 10 12 14 16 18 20 1 1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10000 Vce(sat)[mV], SATURATION VOLTAGE Vbe(sat)[mV], SATURATION VOLTAGE 10000 Ic=10Ib o Tj=-25 C o Tj=25 C 1000 o Tj=125 C 100 0.1 1 Ic=10Ib 1000 Tj=25? Tj=125? 100 Tj=-25? 10 1 0.1 10 1 Ic[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage Transient Thermal Resistance, Rthjc[ C / W] 12 VCE = 5V 1.0 0.9 o 10 IC[A], COLLECTOR CURRENT 10 Ic[A], COLLECTOR CURRENT 8 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 Pulse duration [sec] VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage Figure 6. Thermal Resistance © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 0.8 www.fairchildsemi.com 3 -100 160 IC MAX. (Pulsed*) IC [A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 IC MAX. (DC) 100ms* DC -1 -0.1 *SINGLE NONREPETITIVE o PULSE TC=25[ C] -0.01 175 1 o TC[ C], CASE TEMPERATURE 10 100 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Power Derating © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 10ms* -10 Figure 8. Safe Operating Area www.fairchildsemi.com 4 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Typical Characteristics 2SC5242/FJA4313 — NPN Epitaxial Silicon Transistor Package Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 3.50 ±0.20 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 16.50 ±0.30 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 www.fairchildsemi.com 5 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor © 2008 Fairchild Semiconductor Corporation 2SC5242/FJA4313 Rev. A3 www.fairchildsemi.com 6