Fairchild BC516 D27Z Pnp darlington transistor Datasheet

BC516
BC516
PNP Darlington Transistor
• This device is designed for applications reguiring extremely high
current gain at currents to 1mA.
• Sourced from process 61.
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Voltage
Value
30
Units
V
VCBO
VEBO
Collector-Base Voltage
40
V
Emitter-Base Voltage
10
IC
Collector Current
- Continuous
V
1
A
PD
Total Power Dissipation
TA = 25°C
TJ, TSTG
Operating and Storage Junction Temperature Range
625
mW
-55 ~ +150
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
VCEO
Parameter
Collector-Emitter Breakdown Voltage
Test Condition
IC = 2mA, IB = 0
Min.
30
Typ.
Max.
Units
V
VCBO
Collector-Base Breakdown Voltage
IC = 100µA, IE = 0
40
V
VEBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
10
V
ICBO
Collector Cutoff Current
VCB = 30V, IE = 0
hFE
DC Current Gain
IC = 20mA, VCE = 2V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 0.1mA
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 5V
fT
Current Gain Bandwidth Product (2)
IC = 10mA, VCE = 5V, f = 100MHz
100
nA
30,00
0
200
1
V
1.4
V
MHZ
NOTES:
1. Pulse Test Pulse Width ≤ 2%
2. fT = IhfeI · ftest
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
RθJA
Parameter
Thermal Resistance, Junction to Ambient
Max.
200
Units
°C/W
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
BC516
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
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First Production
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©2002 Fairchild Semiconductor Corporation
Rev. I1
Mouser Electronics
Authorized Distributor
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