1SMF16BT1, 1SMF16BT3, 1SMF16BT3G Zener Transient Voltage Suppressor SOD−123 Flat Lead Package The 1SMF16B is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener impedance and fast response time. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. Specification Features: • • • • • • • • • • Stand−off Voltage: 16 Volt Peak Power − 175 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage Response Time is Typically < 1 ns IEC61000−4−2 Level 4 ESD Protection Low Profile − Maximum Height of 1.0 mm Small Footprint Cathode Indicated by Polarity Band Pb−Free Package is Available http://onsemi.com PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR 175 WATT PEAK POWER 1 2 1: CATHODE 2: ANODE Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any QUALIFIED MAX REFLOW TEMPERATURE: 260°C SOD−123FL CASE 498 PLASTIC MARKING DIAGRAM Device Meets MSL 1 Requirements Epoxy Meets UL 94, V−0 1 CATHODE MLU D MLU D 2 ANODE = Specific Device Code = Date Code ORDERING INFORMATION Package Shipping† 1SMF16BT1 SOD−123FL 3,000/Tape & Reel 1SMF16BT3 SOD−123FL 10,000/Tape & Reel 1SMF16BT3G SOD−123FL (Pb−Free) 10,000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2004 February, 2004 − Rev. 1 1 Publication Order Number: 1SMF16B/D 1SMF16BT1, 1SMF16BT3, 1SMF16BT3G MAXIMUM RATINGS Rating Symbol Value Unit Maximum Ppk Dissipation @ TA = 25°C, (PW−10/1000 s) (Note 1) Ppk 175 W Maximum Ppk Dissipation @ TA = 25°C, (PW−8/20 s) (Note 2) Ppk 1000 W TJ, Tstg −55 to +150 °C Operating and Storage Temperature Range 1. Non−repetitive current pulse at TA = 25°C, per waveform of Figure 3. 2. Non−repetitive current pulse at TA = 25°C, per waveform of Figure 4. I ELECTRICAL CHARACTERISTICS IF (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR VC VBR VRWM V IR VF IT Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.3 Volts @ 850 mA) VRWM (Note 3) VBR @ IT (V) (Note 4) IT IR @ VRWM Max VC @ IPP = 1 Amp Max VC @ IPP = 7 Amp Device Marking (V) Min Nom Max (mA) (A) (V) (V) 1SMF16B MLU 16 16.7 17.6 18.5 1.0 1.0 20 26 3. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 4. VBR measured at pulse test current IT at ambient temperature of 25°C. Zin LOAD Vin VL Figure 1. Typical Protection Circuit http://onsemi.com 2 1SMF16BT1, 1SMF16BT3, 1SMF16BT3G 10,000 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. 100 1000 PEAK VALUE − IRSM VALUE (%) PP, PEAK POWER (WATTS) tr I HALF VALUE − RSM 2 50 100 tr≤ 10 s tP 10 1.0 10 1000 100 0 10,000 0 1 2 tP, PULSE WIDTH (s) tr Figure 3. 10 X 1000 s Pulse Waveform 160 PEAK VALUE IRSM @ 8 s PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ TA = 25° C % OF PEAK PULSE CURRENT 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 0 0 20 40 60 140 120 100 80 60 40 20 0 80 0 25 Figure 4. 8 X 20 s Pulse Waveform 75 100 125 150 Figure 5. Pulse Derating Curve 300 1 0.7 0.5 250 CAPACITANCE (pF) DERATING FACTOR 50 TA, AMBIENT TEMPERATURE (°C) t, TIME (s) 0.3 0.2 PULSE WIDTH 10 ms 0.1 0.07 0.05 1 ms 0.03 10 s 0.1 0.2 0.5 1 2 5 10 200 150 100 100 s 0.02 0.01 4 t, TIME (ms) Figure 2. Pulse Rating Curve 100 3 50 20 50 100 0 2 4 6 8 10 12 14 D, DUTY CYCLE (%) REVERSE VOLTAGE (V) Figure 6. Typical Derating Factor for Duty Cycle Figure 7. Capacitance versus Reverse Voltage http://onsemi.com 3 16 1SMF16BT1, 1SMF16BT3, 1SMF16BT3G PACKAGE DIMENSIONS SOD−123FL CASE 498−01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. B L E D A H POLARITY INDICATOR OPTIONAL AS NEEDED C DIM A B C D E H J K L K L MILLIMETERS MIN MAX 1.50 1.80 2.50 2.90 0.90 1.00 0.70 1.10 0.55 0.95 0.00 0.10 0.10 0.20 3.40 3.80 0° 8° INCHES MIN MAX 0.059 0.071 0.098 0.114 0.035 0.039 0.028 0.043 0.022 0.037 0.000 0.004 0.004 0.008 0.134 0.150 0° 8° J SOLDERING FOOTPRINT* ÉÉ ÉÉ ÉÉ 0.91 0.036 2.36 0.093 4.19 0.165 ÉÉ ÉÉ ÉÉ SCALE 10:1 1.22 0.048 mm inches SOD−123 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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