NUP8011MU Low Capacitance Transient Voltage Suppressor Array This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, and other applications. Its integrated design provides very effective and reliable protection for eight separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features •Low Capacitance •Low Leakage Current < 1 mA @ 4.3 V •ESD Ratings: ♦IEC61000-4-2, 8 kV (Contact) ♦Machine Model = Class C, 400 V ♦Human Body Model = Class 3B, 8 kV •UDFN Package, 1.2 x 1.8 mm •Moisture Sensitivity Level 1 •This is a Pb-Free Device http://onsemi.com 1 8 2 7 3 6 4 5 (Top View) Benefits •Provides Protection for ESD Industry Standards: IEC 61000, HBM •Protects the Line Against Transient Voltage Conditions •Minimize Power Consumption of the System •Minimize PCB Board Space MARKING DIAGRAM 8 1 P3M G UDFN8 CASE 517AD 1 P3 = Specific Device Code M = Month Code G = Pb-Free Package (Note: Microdot may be in either location) Applications •ESD Protection for Data Lines •Wireless Phones •Handheld Products •Notebook Computers •LCD Displays PIN CONNECTIONS 1 4 8 5 ORDERING INFORMATION Device NUP8011MUTAG Package UDFN8 (Pb-Free) Shipping 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 September, 2007 - Rev. 0 1 Publication Order Number: NUP8011MU/D NUP8011MU ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) Symbol VRWM IR VBR IF Parameter Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF V IR VF IT IPP Uni-Directional MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit PD 380 mW Thermal Resistance, Junction-to-Ambient Above 25°C, Derate RqJA 327 3.05 °C/W mW/°C Maximum Junction Temperature TJmax 150 °C Operating Temperature Range TOP -40 to +85 °C Storage Temperature Range Tstg -55 to +150 °C Lead Solder Temperature (10 seconds duration) TL 260 °C Steady State Power - 1 Diode (Note 1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C) Breakdown Voltage VBR @ 1 mA (Volts) Leakage Current IRM @ VRM Typ Capacitance @ 0 V Bias (pF) (Note 2) Typ Capacitance @ 3 V Bias (pF) (Note 2) Device Device Marking Min Nom Max VRWM IRWM (mA) Typ Max Typ Max NUP8011MUTAG P3 6.47 6.8 7.14 4.3 1.0 12 14 6.7 9.5 1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR-4 board with min pad. 2. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C http://onsemi.com 2 NUP8011MU TYPICAL ELECTRICAL CHARACTERISTICS TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY 14 4.0 3.0 2.0 1.0 0 -100 12 TA = 25°C 10 8 6 4 2 0 -50 0 100 50 150 0 1 2 3 4 T, TEMPERATURE (°C) BIAS VOLTAGE (V) Figure 1. Reverse Leakage versus Temperature Figure 2. Capacitance 1 IF, FORWARD CURRENT (A) IR, REVERSE LEAKAGE (nA) 5.0 0.1 0.01 TA = 25°C 0.001 0.6 0.8 1.0 1.2 1.4 VF, FORWARD VOLTAGE (V) Figure 3. Forward Voltage http://onsemi.com 3 1.6 1.8 5 6 NUP8011MU PACKAGE DIMENSIONS UDFN8, 1.8x1.2, 0.4P CASE 517AD-01 ISSUE O A B D 2X 0.15 C PIN ONE REFERENCE 2X ÉÉÉ ÉÉÉ A3 E A1 ÉÉ ÇÇ ÇÇ DETAIL A 0.15 C DIM A A1 A3 b D D2 E E2 e K L TOP VIEW (A3) DETAIL A A 0.10 C 8X 0.08 C SEATING PLANE SIDE VIEW 8X 6X e L 8X MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.00 0.03 0.05 0.127 REF 0.15 0.20 0.25 1.80 BSC 0.90 1.00 1.10 1.20 BSC 0.20 0.30 0.40 0.40 BSC 0.20 ----0.20 0.25 0.30 C A1 D2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 1 K 8 4 5 E2 8X b BOTTOM VIEW 0.10 C A B 0.05 C NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. 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