MCC BC817K-25 Npn small signal transistor 500mw Datasheet

MCC
R
Micro Commercial Components
BC817K-25
omponents
20736 Marilla Street Chatsworth
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Features
•
•
•
•
•
•
•
•
NPN Small
Halogen free available upon request by adding suffix "-HF"
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Ideally Suited for Automatic Insertion
Copper lead frame with better heat dissipation
For Switching and AF Amplifier Applications
Epitaxial Planar Die Construction
Signal Transistor
500mW
SOT-23
Mechanical Data
•
Case: SOT-23, Molded Plastic
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Polarity: See Diagram
•
Weight: 0.008 grams ( approx.)
•
Marking:
A
D
C
C
B
6B
E
B
F
E
H
G
Maximum Ratings @ 25oC Unless Otherwise Specified
J
K
Charateristic
Symbol Value
VCEO
45
Collector-Emitter Voltage
Unit
VEBO
8
V
I
C
500
mA
Peak Collector Current
ICM
1000
mA
Thermal Resistance- Junction to Air
Rthja
250
Pd
500
Emitter-Base Voltage
Collector Current
o
Power Dissipation@T a=25 C(Note1)
Operating & Storage Temperature
Tj, TSTG -55~150
DIMENSIONS
V
o
C/W
mW
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
MAX
.110
.120
.083
.104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
o
C
Note: 1. Device mounted on Ceramic Substrate 0.7mm X 2.5cm2 area
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
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Revision: C
1 of 4
2018/01/17
MCC
BC817K-25
R
Micro Commercial Components
Electrical Characteristics
Parameter
@25°C unless otherwise specified
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC= 10μA, IE=0
50
V
Collector-emitter breakdown voltage
VCEO
IC= 10mA, IB=0
45
V
Emitter-base breakdown voltage
VEBO
IE=10μA, IC=0
8
V
Collector cut-off current
ICBO
VCB= 45 V , IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB= 4V, IC=0
0.1
μA
hFE(1)
VCE= 1V, IC= 100mA
160
hFE(2)
VCE= 1V, IC= 500mA
40
DC current gain
400
Collector-emitter saturation voltage
VCE(sat)
IC= 500mA, IB= 50mA
0.7
V
Base-emitter saturation voltage
VBE(sat)
IC= 500mA, IB= 50mA
1.2
V
1.2
V
Base-emitter voltage
VBE
VCE= 1 V, IC= 500mA
Collecter capactiance
Cob
VCB=10V ,f=1MHz
Transition frequency
fT
VCE= 5 V, IC= 10mA
f=100MHz
10
100
pF
MHz
°
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Revision: C
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2018/01/17
MCC
Typical Characteristics
R
Micro Commercial Components
Static Characteristic
0.8mA
200
COMMON
EMITTER
Ta=25℃
o
0.7mA
0.6mA
160
0.5mA
120
0.4mA
0.3mA
80
Ta=100 C
400
DC CURRENT GAIN
(mA)
0.9mA
240
IC
COLLECTOR CURRENT
hFE —— IC
500
1mA
hFE
280
300
o
Ta=25 C
200
0.2mA
40
VCE= 1V
IB=0.1mA
0
100
0
2
4
6
8
10
12
COLLECTOR-EMITTER VOLTAGE
VCE
14
16
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
1.0
Ta=25℃
0.6
Ta=100℃
500
100
VCEsat ——
0.4
β=10
0.8
10
COLLECTOR CURRENT
VBEsat —— IC
1.2
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
1
(V)
IC
(mA)
IC
β=10
0.3
0.2
Ta=100℃
0.1
0.4
Ta=25℃
0.2
0.1
1
10
COLLECTOR CURRENT
IC
500
——
IC
0.0
0.1
500
100
1
(mA)
10
100
COLLECTOR CURRENT
VBE
Cob / Cib
100
——
IC
VCB / VEB
f=1MHz
IE=0 / IC=0
IC (mA)
50
o
Ta=25 C
(pF)
100
Cib
C
COLLECTOR CURRENT
o
CAPACITANCE
Ta=100 C
10
Ta=25℃
500
(mA)
10
1
Cob
VCE=1V
0.1
0.3
1
0.4
0.5
0.6
0.7
BASE-EMITTER VOLTAGE
fT
——
0.9
1.0
5
10
REVERSE VOLTAGE
IC
Pc
0.8
(MHz)
100
TRANSITION FREQUENCY
fT
0
COLLECTOR POWER DISSIPATION
Pc (W)
300
0.8
VBE(V)
——
V
(V)
Ta
0.6
0.4
0.2
VCE=5V
o
Ta=25 C
10
1
COLLECTOR CURRENT
0.0
60
10
IC
0
25
50
75
AMBIENT TEMPERATURE
(mA)
100
Ta
125
150
(℃ )
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Revision: C
3 of 4
2018/01/17
MCC
R
Micro Commercial Components
Ordering Information :
Device
Packing
Tape&Reel:3Kpcs/Reel
Part Number-TP
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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