EIC BR3500W Silicon bridge rectifier Datasheet

BR3500W - BR3510W
SILICON BRIDGE RECTIFIERS
BR50W
PRV : 50 - 1000 Volts
Io : 35 Amperes
0.732 (18.6)
0.692 (17.5)
FEATURES :
*
*
*
*
*
*
1.130 (28.7)
1.120 (28.4)
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
High case dielectric strength
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
* Pb / RoHS Free
0.042 (1.06)
0.038 (0.96)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
1.2 (30.5)
MIN.
0.310 (7.87)
0.280(7.11)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
BR
BR
BR
BR
BR
BR
BR
3500W 3501W 3502W 3504W 3506W 3508W 3510W
UNITS
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 55°C
IF(AV)
35
A
IFSM
400
A
I2t
660
A2 S
VF
1.1
V
IR
10
µA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 17.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
mA
Typical Thermal Resistance at Junction to Case ( Note 1 )
RθJC
1.5
°C/W
Typical Thermal Resistance at Junction to Ambient
RθJA
10
°C/W
TJ
- 40 to + 150
°C
TSTG
- 40 to + 150
°C
Operating Junction Temperature Range
Storage Temperature Range
Notes :
1. Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( BR3500W THRU BR3510W )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD OUTPUT
CURRENT AMPERES
42
35
28
21
14
HEAT-SINK MOUNTING, Tc
7.5" x 3.5" x 4.6" THK.
(19cm x 9cm x 11.8cm)
Al.-Finned plate
7
0
0
25
50
75
100
125
150
600
500
T J = 50 °C
400
300
200
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
175
1
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
4
6
10
20
40
60
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
2
NUMBER OF CYCLES AT 60Hz
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
1.0
TJ = 25 °C
0.1
TJ = 25 °C
0.01
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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