UOT MID-54H19 T-1 3/4 package pin photodiode Datasheet

T-1 3/4 PACKAGE
PIN PHOTODIODE
Description
MID-54H19
Package Dimensions
The MID-54H19 is a photodiode mounted in special
Unit : mm ( inches )
dark end look plastic package and suitable for the
ψ5.05
(.200)
IRED (850nm/880nm) type.
5.47
(.215)
7.62
(.300)
5.90
(.230)
1.00
(.040)
Features
l
High photo sensitivity
l
Low junction capacitance
l
High cut-off frequency
l
Fast switching time
l
Acceptance angle : 40°
FLAT DENOTES CATHOD
23.40MIN.
(.920)
0.50TYP.
(.020)
1.00MIN.
(.040)
2.54
(.100)
l
C
A
Application
Data communication
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ TA=25 C
Parameter
Power Dissipation
Maximum Rating
Unit
150
mW
o
o
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55 C to +100 C
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-54H19
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
V(BR)R
30
IR=100µA
Reverse Break Down Voltage
Type .
Max.
Unit
V
Ee=0
VR=10V
Reverse Dark Current
ID
30
nA
Ee=0
λ=850nm
Open Circuit Voltage
Ee=0.1mW/cm2
VOC
350
Rise Time
VR =10V λ=850nm
Tr
30
Fall Time
RL=50Ω
Tf
30
Light Current
VR =5V, λ=850nm
Ee=0.1mW/cm2
VR =3V, f=1MHZ
Total Capacitance
IL
7
CT
mV
nS
12
µA
25
pF
Ee=0
Typical Optical-Electrical Characteristic Curves
100
Capacitance C - pF
Dark Current - pA
4000
3000
2000
1000
60
40
20
0
0
0
5
10
15
0.01
20
Reverse Voltage - VR
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
o
2
TEMP=25 C , Ee=0 mW/cm
0.1
1
10
100
Reverse Voltage- VR
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHZ, Ee=0mW/cm2
1000
Dark Current IR - nA
200
Total Power Dissipation mW
80
150
100
50
0
100
10
1
0.1
0
20
40
60
80
100
o
Ambient Temperature - C
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
0
20
40
60
80
100
o
Ambient Temperature- C
FIG.4 DARK CURRENT VS AMBIENT
TEMPERATURE
VR=10, Ee=0 mw/cm2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-54H19
Typical Optical-Electrical Characteristic Curves
1000
Ip - µA
80
100
60
Photocurrnet
Relative Spectral Sensitivity
100
40
20
0
700
800
900 1000 1100 1200
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
10
1
0.1
0.01
0. 1
1
10
Irradiance Ee (mW/cm2)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 850 nm
0° 10° 20°
Relative Sensitivity
30°
40°
1.0
0.9
50°
60°
70°
0.8
80°
90°
0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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