BTS 282 Z Speed TEMPFET N-Channel Enhancement mode Logic Level Input 1 1 Analog driving possible 7 VPT05167 7 VPT05754 Fast switching up to 1 MHz Potential-free temperature sensor with thyristor characteristics Overtemperature protection 1 Avalanche rated 7 High current pinning Type BTS 282 Z VDS 49 V RDS(on) 6.5 m Package Ordering Code P-TO220-7-3 Q67060-S6004-A2 P-TO220-7-180 Q67060-S6005-A2 P-TO220-7-230 Q67060-S6007 D Pin 4 and TAB G Pin 2 A Pin 3 Temperature Sensor K Pin 5 S Pin 1 + 6 + 7 Pin Symbol Function 1 S Source 2 G Gate 3 A Anode Temperature Sensor 4 D Drain 5 K Cathode Temperature Sensor 6 S Source 7 S Source 1 2000-09-11 BTS 282 Z Maximum Ratings Parameter Symbol Drain source voltage VDS 49 Drain-gate voltage, RGS = 20 k V 49 Gate source voltage VGS Nominal load current (ISO 10483) ID(ISO) VGS = 4.5 V, VDS 0.5 V, TC = 85 °C VGS = 10 V, VDS DGR Value Unit V 20 A 36 0.5 V, TC = 85 °C 52 Continuous drain current 1) ID 80 Pulsed drain current ID puls 320 Avalanche energy, single pulse EAS 2 J Power dissipation Ptot 300 W -40 ...+175 °C TC = 100 °C, VGS = 4.5V ID = 36 A, RGS = 25 TC = 25 °C Operating temperature 2) Tj Peak temperature ( single event ) Tjpeak Storage temperature Tstg 200 -55 ... +150 DIN humidity category, DIN 40 040 E IEC climatic category; DIN IEC 68-1 40/150/56 1current limited by bond wire 2Note: Thermal trip temperature of temperature sensor is below 175°C 2 2000-09-11 BTS 282 Z Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics junction - case: RthJC - - 0.5 Thermal resistance @ min. footprint Rth(JA) - - 62 Thermal resistance @ 6 cm2 cooling area 1) Rth(JA) - 33 40 K/W Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DSS 49 - - VGS(th) 1.2 1.6 2 at Tj = 25°C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V VGS = 0 V, ID = 0.25 mA Gate threshold voltage, VGS = VDS ID = 240 µA Zero gate voltage drain current µA IDSS VDS = 45 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 45 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 45 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current nA IGSS VGS = 20 V, VDS = 0 V, Tj = 25 °C - 10 100 VGS = 20 V, VDS = 0 V, Tj = 150 °C - 20 100 Drain-Source on-state resistance m RDS(on) VGS = 4.5 V, ID = 36 A - 8.2 9.5 VGS = 10 V, ID = 36 A - 5.8 6.5 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3 2000-09-11 BTS 282 Z Electrical Characteristics Parameter Symbol Values Unit min. typ. max. gfs 30 70 - S Ciss - 3850 4800 pF Coss - 1090 1357 Crss - 570 715 td(on) - 30 45 tr - 37 56 td(off) - 70 105 tf - 36 55 Qg(th) - 3.8 5.7 Qg(5) - 92 138 Qg(total) - 155 232 V(plateau) - 3.4 - at Tj = 25°C, unless otherwise specified Dynamic Characteristics Forward transconductance VDS>2*ID *RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Rise time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Fall time VDD = 30 V, VGS = 4.5 V, ID = 80 A, RG = 1.3 Gate Charge Characteristics Gate charge at threshold nC VDD = 40 V, ID=≥0,1 A , V GS = 0 to 1 V Gate charge at 5.0 V VDD = 40 V, ID = 80 A, V GS = 0 to 5 V Gate charge total VDD = 40 V, ID = 80 A, V GS = 0 to 10 V Gate plateau voltage V VDD = 40 V, ID = 80 A 4 2000-09-11 BTS 282 Z Electrical Characteristics Symbol Parameter Values Unit min. typ. max. IS 80 - - IFM 320 - - VSD - 1.25 1.6 V trr - 105 157 ns Qrr - 0.31 0.47 µC at Tj = 25°C, unless otherwise specified Reverse Diode Inverse diode continuous forward current A TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, IF = 95 A Reverse recovery time VR = 30 V, IF =IS, diF/dt = 100 A/µs Reverse recovery charge VR = 30 V, IF =IS, diF/dt = 100 A/µs Sensor Characteristics For temperature sensing, i.e. temperature protection, please consider application note "Temperature sense concept - Speed TEMPFET”. For short circuit protection please consider application note "Short circuit behaviour of the Speed TEMPFET family”. All application notes are available at http://www.infineon.com/tempfet/ Forward voltage V VAK(on) IAK(on) = 5 mA, Tj = -40...+150 °C - 1.3 1.4 IAK(on) = 1.5 mA, Tj = 150 °C - - 0.9 Sensor override - - 10 - - 5 - - 600 tP = 100 µs, Tj = -40...+150 °C Forward current IAK(on) mA Tj = -40...+150 °C Sensor override tP = 100 µs, Tj = -40...+150 °C 5 2000-09-11 BTS 282 Z Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. - - 4 µA 100 - - µs - - 150 Sensor Characteristics Temperature sensor leakage current IAK(off) Tj = 150 °C Min. reset pulse duration 1) treset Tj = -40...+150 °C, IAK(on) = 0.3 mA, VAK(Reset)<0.5V VAK Recovery time1)2) trecovery Tj = -40...+150 °C, IAK(on) = 0.3 mA Characteristics Holding current, VAK(off) = 5V mA IAK(hold) Tj = 25 °C 0.05 - 0.5 Tj = 150 °C 0.05 - 0.3 TTS(on) 150 160 170 °C toff 0.5 - 2.5 µs VAK(reset) 0.5 - - V Thermal trip temperature VTS = 5V Turn-off time (Pin G+A and K+S connected) VTS = 5V, ITS(on) = 2 mA Reset voltage Tj = -40...+150°C Sensor recovery behaviour: S ensor R E S E T V A K [V ] tre s e t 5 4 0 S ensor O N t re c o v e ry R eset OFF 1See diagram Sensor recovery behaviour 2Time after reset pulse until V AK reaches 4V again 6 2000-09-11 BTS 282 Z 1 Maximum allowable power dissipation 2 Drain current ID = f(TC ); VGS 4.5V Ptot = f(TC) 100 325 W A 275 80 250 70 200 ID Ptot 225 175 60 50 150 125 40 100 30 75 20 50 10 25 0 -40 0 40 80 °C 120 0 0 180 20 40 60 80 100 120 140 °C TC TC 3 Typ. transient thermal impedance 4 Transient thermal impedance ZthJA=f(tp ) @ 6 cm2 cooling area ZthJC = f (tp ) Parameter: D=tp /T parameter : D = tp /T 10 2 10 0 K/W K/W D=0.5 D=0.5 10 -1 0.2 0.1 0.05 10 0 0.05 10 -2 0.02 0.2 0.1 Z thJC Z thJA 10 1 180 0.02 0.01 0.01 10 -1 10 -3 Single pulse Single pulse 10 -2 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 1 10 10 10 10 10 10 10 10 10 10 3 tp s 10 3 tp 7 2000-09-11 BTS 282 Z 5 Safe operating area 6 Typ. output characteristic ID=f(VDS ); D=0.01; TC =25°C; VGS =4.5V ID = f(VDS); Tj =25°C Parameter: VGS 3 10 200 7V A A Rdson=Vds/Id 30µs 10V 100µs 5V 6V 160 140 ID ID 10 2 1ms 4.5V 120 100 4V 10ms 80 10 1 100ms 3.5V 60 DC 40 3V 20 10 0 0 10 10 1 V 10 0 0 2 1 V 2 4 VDS VDS 7 On-state resistance 8 On-state resistance RON = f(Tj ); ID=36A; VGS = 4.5V RON = f(Tj ); ID=36A; VGS = 10V 20 14 m m max. max. RDS(on) RDS(on) 16 14 typ. 12 10 typ. 8 10 6 8 6 4 4 2 2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj -25 0 25 50 75 100 125 °C 175 Tj 8 2000-09-11 BTS 282 Z 9 Typ. transfer characteristics 10 Typ. input threshold voltage ID = f(VGS); VDS = 12V; Tj = 25°C VGS(th) = f(Tj); VDS =VGS Parameter: ID 2.4 150 A V 2.0 120 VGS(th) 110 ID 100 90 80 1.8 240mA 1.6 24mA 1.4 1.2 70 60 1.0 50 0.8 40 2.4mA 240µA 0.6 30 0.4 20 0.2 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 -50 5.0 -25 0 25 50 100 125 °C 75 VGS 175 Tj 11 Typ. capacitances 12 Typ. reverse diode forward C = f(VDS); VGS =0 V, f=1 MHz charcteristics IF = f(VSD ) tp = 80µs (spread); Parameter: Tj 10 10 3 2 A nF 10 2 10 1 C IF 150°C Ciss 10 0 Coss 10 0 Crss 10 -1 0 25°C 10 1 5 10 15 20 25 30 V 10 -1 0.0 40 VDS 0.2 0.4 0.6 0.8 1.0 V 1.4 VSD 9 2000-09-11 BTS 282 Z 13 Typ. gate charge 14 Drain-source break down voltage VGS = f(QGate) V(BR)DSS = f(Tj ) Parameter: ID puls = 80 A BTS 282 Z 16 58 V V V(BR)DSS 56 VGS 12 10 0,2 VDS max 0,8 VDS max 55 54 53 52 8 51 50 6 49 4 48 47 2 46 0 0 40 80 120 160 nC 45 -50 240 QGate -25 0 25 50 75 100 125 °C 175 Tj 10 2000-09-11 BTS 282 Z Package Ordering Code Package Ordering Code P-TO220-7-3 Q67060-S6004-A2 P-TO220-7-180 Q67060-S6005-A2 0.05 1) 1.5 ±0.4 3.6 0 ... 0.15 0.6 +0.1 -0.03 1.27 2.4 1.27 0.5 6 x 1.27 = 7.62 3.9 6 x 1.27 = 7.62 8.4 1) shear and punch direction no burrs this surface Package Ordering Code P-TO220-7-230 Q67060-S6007 GPT05167 0.5 +0.15 (14.1) 0.1 2.4 (1.3) 10.5 ±0.15 6.5 9.2 8.6 10.2 0.6 4.4 1.3 +0.1 -0.02 3.3 12.8 A 9.2 ±0.2 1.3 1) B 9.9 8 7.5 6.6 4.4 2.8 15.6 9.9 9.5 3.7 5 0.25 M A B +3 0.1 B 1) Shear and punch direction no burrs this surface Back side, heatsink contour All metal surfaces tin plated, except area of cut 11 2000-09-11 BTS 282 Z Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 2000-09-11