ETC1 GS71116AJ-12I 1mb asynchronous sram Datasheet

GS71116ATP/J/U
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
7, 8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
64K x 16
1Mb Asynchronous SRAM
Features
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 145/125/100/85 mA at
minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: –40° to 85°C
• Package line up
J:
400 mil, 44-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
GP: Pb-Free 400 mil, 3244-pin TSOP Type II package
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package
GU: Pb-Free 6 mm x 8 mm Fine Pitch Ball Grid Array
package
• Pb-Free TSOP-II and FP-BGA packages available
Description
The GS71116A is a high speed CMOS static RAM organized
as 65,536-words by 16-bits. Static design eliminates the need
for external clocks or timing strobes. Operating on a single
3.3 V power supply and all inputs and outputs are TTLcompatible. The GS71116A is available in a 6 mm x 8 mm
Fine Pitch BGA package, as well as in 400 mil SOJ and 400
mil TSOP Type-II packages.
Pin Descriptions
Symbol
Description
A0–A15
Address input
DQ1–DQ16
Data input/output
CE
Chip enable input
LB
Lower byte enable input
(DQ1 to DQ8)
UB
Upper byte enable input
(DQ9 to DQ16)
WE
Write enable input
OE
Output enable input
VDD
+3.3 V power supply
VSS
Ground
NC
No connect
Rev: 1.07 12/2004
SOJ 64K x 16-Pin Configuration
A4
A3
A2
A1
A0
CE
DQ1
DQ2
DQ3
DQ4
VDD
VSS
DQ5
DQ6
DQ7
DQ8
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
Top view
44-pin
SOJ
13
14
15
16
17
18
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
19
20
21
22
A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14
DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
NC
Package J
1/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
Fine Pitch BGA 64K x 16-Bump Configuration
1
2
3
4
5
6
A
LB
OE
A0
A1
A2
NC
B
DQ16
UB
A3
A4
CE
DQ1
C
DQ14 DQ15
A5
A6
DQ2
DQ3
D
VSS DQ13
NC
A7
DQ4
VDD
E
VDD DQ12
NC
NC
DQ5
VSS
F
DQ11 DQ10
A8
A9
DQ7
DQ6
G
DQ9
NC
A10
A11
WE
DQ8
H
NC
A12
A13
A14
A15
NC
6 mm x 8 mm, 0.75 mm Bump Pitch (Package U)
Top View
TSOP-II 64K x 16-Pin Configuration
A4
A3
A2
A1
A0
CE
DQ1
DQ2
DQ3
DQ4
VDD
VSS
DQ5
DQ6
DQ7
DQ8
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Top view
44-pin
TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
16
17
18
19
20
21
22
A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14
DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
NC
Package TP
Rev: 1.07 12/2004
2/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
Block Diagram
A0
Address
Input
Buffer
Row
Decoder
Memory Array
Column
Decoder
A15
CE
WE
Control
OE
UB _____
I/O Buffer
DQ1
DQ16
Truth Table
CE
OE
WE
LB
UB
DQ1 to DQ8
DQ9 to DQ16
VDD Current
H
X
X
X
X
Not Selected
Not Selected
ISB1, ISB2
L
L
Read
Read
L
H
Read
High Z
H
L
High Z
Read
L
L
Write
Write
L
H
Write
Not Write, High Z
H
L
Not Write, High Z
Write
L
L
L
X
H
L
L
H
H
X
X
High Z
High Z
L
X
X
H
H
High Z
High Z
IDD
Note:
X: “H” or “L”
Rev: 1.07 12/2004
3/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Supply Voltage
VDD
–0.5 to +4.6
V
Input Voltage
VIN
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Output Voltage
VOUT
–0.5 to VDD +0.5
(≤ 4.6 V max.)
V
Allowable power dissipation
PD
0.7
W
Storage temperature
TSTG
–55 to 150
oC
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage for -7/-8/-10/-12
VDD
3.0
3.3
3.6
V
Input High Voltage
VIH
2.0
—
VDD +0.3
V
Input Low Voltage
VIL
–0.3
—
0.8
V
Ambient Temperature,
Commercial Range
TAc
0
—
70
o
Ambient Temperature,
Industrial Range
TAI
–40
—
85
o
C
C
Notes:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than –2 V and not exceed 20 ns.
Capacitance
Parameter
Symbol
Test Condition
Max
Unit
Input Capacitance
CIN
VIN = 0 V
5
pF
Output Capacitance
COUT
VOUT = 0 V
7
pF
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
Rev: 1.07 12/2004
4/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
DC I/O Pin Characteristics
Parameter
Symbol
Test Conditions
Min
Max
Input Leakage Current
IIL
VIN = 0 to VDD
–1 uA
1uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
–1 uA
1uA
Output High Voltage
VOH
IOH = –4 mA
2.4
Output Low Voltage
VOL
ILO = +4 mA
0.4V
Power Supply Currents
Parameter
Symbol
Test Conditions
0 to 70°C
10 ns
12 ns
7 ns
IDD
CE ≤ VIL
All other inputs
≥ VIH or ≤ VIL
Min. cycle time
IOUT = 0 mA
145 mA 125 mA 100 mA
85 mA
Standby
Current
ISB1
CE ≥ VIH
All other inputs
≥ VIH or ≤VIL
Min. cycle time
25 mA
15 mA
Standby
Current
ISB2
CE ≥ VDD – 0.2 V
All other inputs
≥ VDD – 0.2 V or ≤ 0.2 V
Operating
Supply
Current
Rev: 1.07 12/2004
7 ns
8 ns
–40 to 85°C
20 mA
20 mA
10 ns
12 ns
150 mA
130 mA 105 mA
90 mA
30 mA
25 mA
20 mA
2 mA
5/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
8 ns
25 mA
5 mA
© 2001, GSI Technology
GS71116ATP/J/U
AC Test Conditions
Output Load 1
Parameter
Conditions
Input high level
VIH = 2.4 V
Input low level
VI L= 0.4 V
50Ω
Input rise time
tr = 1V/ns
VT = 1.4 V
Input fall time
tf = 1 V/ns
Input reference level
1.4 V
Output Load 2
Output reference level
1.4 V
3.3 V
Output load
Fig. 1& 2
DQ
Rev: 1.07 12/2004
589Ω
DQ
Notes:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
6/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
30pF1
5pF1
434Ω
© 2001, GSI Technology
GS71116ATP/J/U
AC Characteristics
Read Cycle
Parameter
Symbol
Read cycle time
-7
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Min
Max
tRC
7
—
8
—
10
—
12
—
ns
Address access time
tAA
—
7
—
8
—
10
—
12
ns
Chip enable access time (CE)
tAC
—
7
—
8
—
10
—
12
ns
Byte enable access time (UB, LB)
tAB
—
3
—
3.5
—
4
—
5
ns
Output enable to output valid (OE)
tOE
—
3
—
3.5
—
4
—
5
ns
Output hold from address change
tOH
3
—
3
—
3
—
3
—
ns
Chip enable to output in low Z (CE)
tLZ*
3
—
3
—
3
—
3
—
ns
Output enable to output in low Z (OE)
tOLZ*
0
—
0
—
0
—
0
—
ns
Byte enable to output in low Z (UB, LB)
tBLZ*
0
—
0
—
0
—
0
—
ns
Chip disable to output in High Z (CE)
tHZ*
—
3.5
—
4
—
5
—
6
ns
Output disable to output in High Z (OE)
tOHZ*
—
3
—
3.5
—
4
—
5
ns
Byte disable to output in High Z (UB, LB)
tBHZ*
—
3
—
3.5
—
3.5
—
3.5
—
* These parameters are sampled and are not 100% tested.
Read Cycle 1: CE = OE = VIL, WE = VIH, UB and, or LB = VIL
tRC
Address
tAA
tOH
Data Out
Rev: 1.07 12/2004
Previous Data
Data valid
7/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
Read Cycle 2: WE = VIH
tRC
Address
tAA
CE
tAC
tHZ
tLZ
tAB
UB, LB
tBHZ
tBLZ
OE
tOE
Data Out
tOHZ
Data valid
tOLZ
High impedance
Write Cycle
Parameter
Symbol
Write cycle time
-7
-8
-10
-12
Unit
Min
Max
Min
Max
Min
Max
Min
Max
tWC
7
—
8
—
10
—
12
—
ns
Address valid to end of write
tAW
5
—
5.5
—
7
—
8
—
ns
Chip enable to end of write
tCW
5
—
5.5
—
7
—
8
—
ns
Byte enable to end of write
tBW
5
—
5.5
—
7
—
8
—
ns
Data set up time
tDW
3.5
—
4
—
5
—
6
—
ns
Data hold time
tDH
0
—
0
—
0
—
0
—
ns
Write pulse width
tWP
5
—
5.5
—
7
—
8
—
ns
Address set up time
tAS
0
—
0
—
0
—
0
—
ns
Write recovery time (WE)
tWR
0
—
0
—
0
—
0
—
ns
Write recovery time (CE)
tWR1
0
—
0
—
0
—
0
—
ns
Output Low Z from end of write
tWLZ*
3
—
3
—
3
—
3
—
ns
Write to output in High Z
tWHZ*
—
3
—
3.5
—
4
—
5
ns
* These parameters are sampled and are not 100% tested.
Rev: 1.07 12/2004
8/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
Write Cycle 1: WE control
tWC
Address
tAW
tWR
OE
tCW
CE
tBW
UB, LB
tAS
tWP
WE
tDW
tDH
Data valid
Data In
tWHZ
tWLZ
Data Out
High impedance
Write Cycle 2: CE control
tWC
Address
tAW
tWR1
OE
tAS
tCW
CE
tBW
UB, LB
tWP
WE
tDW
Data valid
Data In
Data Out
Rev: 1.07 12/2004
tDH
High impedance
9/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
Write Cycle 3: UB, LB control
tWC
Address
tAW
tWR1
OE
tAS
tCW
CE
tBW
UB, LB
tWP
WE
tDW
Data valid
Data In
Data Out
Rev: 1.07 12/2004
tDH
High impedance
10/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
44-Pin, 400 mil SOJ
L
D
c
HE
GE
23
E
44
22
e
A
A1
A
A2
1
Symbol
y
B
B1
Detail A
Q
Dimension in inch
Dimension in mm
min
nom
max
min
nom
max
A
—
—
0.148
—
—
3.759
A1
0.025
—
—
0.635
—
—
A2
0.105
0.110
0.115
2.667
2.794
2.921
B
—
0.018
—
—
0.457
—
B1
0.026
0.028
0.032
0.660
0.711
0.813
c
—
0.008
—
—
0.203
—
D
1.120
1.125
1.130
28.44
28.58
28.70
E
0.395
0.400
0.405
10.033
10.160
10.287
e
—
0.05
—
—
1.27
—
HE
0.435
0.440
0.445
11.049
11.176
11.303
GE
0.360
0.370
0.380
9.144
9.398
9.652
L
0.082
0.087
0.106
2.083
2.210
2.70
y
—
—
0.004
—
—
0.102
Q
0o
—
7o
0o
—
7o
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B1 does not include dambar protrusion/intrusion.
3. Controlling dimension: inches
Rev: 1.07 12/2004
11/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
44 Pin, 400 mil TSOP-II
Symbol
D
c
22
e
B
y
L
L1
A1
A
A2
1
A
HE
23
E
44
Detail A
Rev: 1.07 12/2004
Q
Dimension in inch
Dimension in mm
min
nom
max
min
nom
max
A
—
—
0.047
—
—
1.20
A1
0.002
—
—
0.05
—
—
A2
0.037
0.039
0.041
0.95
1.00
1.05
B
0.01
0.014
0.018
0.25
0.35
0.45
c
—
0.006
—
—
0.15
—
D
0.721
0.725
0.729
18.31
18.41
18.51
E
0.396
0.400
0.404
10.06
10.16
10.26
e
—
0.031
—
—
0.80
—
HE
0.455
0.463
0.471
11.56
11.76
11.96
L
0.016
0.020
0.024
0.40
0.50
0.60
L1
—
0.031
—
—
0.80
—
y
—
—
0.004
—
—
0.10
Q
o
—
o
o
—
5o
0
5
0
Notes:
1. Dimension D& E do not include interlead flash.
2. Dimension B does not include dambar protrusion/intrusion.
3. Controlling dimension: mm
12/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
6 mm x 8 mm Fine Pitch BGA
0.36(typ)
D
H
G
F
E
D
C
B
A
0.22 ± 0.05
1
0.75(typ).
3.75
3
4
5.25
Rev: 1.07 12/2004
13/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Ball Dia. 0.35
Pitch 0.75
6
5
Bottom View
2
pin A1 index
1.20(max)
pin A1 index
units: mm
Top View
6.00 ± 0.10
8.00 ± 0.10
0.10
© 2001, GSI Technology
GS71116ATP/J/U
Ordering Information
Part Number*
Package
Access Time
Temp. Range
GS71116ATP-7
400 mil TSOP-II
7 ns
Commercial
GS71116ATP-8
400 mil TSOP-II
8 ns
Commercial
GS71116ATP-10
400 mil TSOP-II
10 ns
Commercial
GS71116ATP-12
400 mil TSOP-II
12 ns
Commercial
GS71116ATP-7I
400 mil TSOP-II
7 ns
Industrial
GS71116ATP-8I
400 mil TSOP-II
8 ns
Industrial
GS71116ATP-10I
400 mil TSOP-II
10 ns
Industrial
GS71116ATP-12I
400 mil TSOP-II
12 ns
Industrial
GS71116AGP-7
Pb-free 400 mil TSOP-II
7 ns
Commercial
GS71116AGP-8
Pb-free 400 mil TSOP-II
8 ns
Commercial
GS71116AGP-10
Pb-free 400 mil TSOP-II
10 ns
Commercial
GS71116AGP-12
Pb-free 400 mil TSOP-II
12 ns
Commercial
GS71116AGP-7I
Pb-free 400 mil TSOP-II
7 ns
Industrial
GS71116AGP-8I
Pb-free 400 mil TSOP-II
8 ns
Industrial
GS71116AGP-10I
Pb-free 400 mil TSOP-II
10 ns
Industrial
GS71116AGP-12I
Pb-free 400 mil TSOP-II
12 ns
Industrial
GS71116AJ-7
400 mil SOJ
7 ns
Commercial
GS71116AJ-8
400 mil SOJ
8 ns
Commercial
GS71116AJ-10
400 mil SOJ
10 ns
Commercial
GS71116AJ-12
400 mil SOJ
12 ns
Commercial
GS71116AJ-7I
400 mil SOJ
7 ns
Industrial
GS71116AJ-8I
400 mil SOJ
8 ns
Industrial
GS71116AJ-10I
400 mil SOJ
10 ns
Industrial
GS71116AJ-12I
400 mil SOJ
12 ns
Industrial
GS71116AU-7
6 mm x 8 mm Fine Pitch BGA
7 ns
Commercial
GS71116AU-8
6 mm x 8 mm Fine Pitch BGA
8 ns
Commercial
GS71116AU-10
6 mm x 8 mm Fine Pitch BGA
10 ns
Commercial
GS71116AU-12
6 mm x 8 mm Fine Pitch BGA
12 ns
Commercial
GS71116AU-7I
6 mm x 8 mm Fine Pitch BGA
7 ns
Industrial
GS71116AU-8I
6 mm x 8 mm Fine Pitch BGA
8 ns
Industrial
Rev: 1.07 12/2004
14/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Status
© 2001, GSI Technology
GS71116ATP/J/U
Ordering Information
Part Number*
Package
Access Time
Temp. Range
GS71116AU-10I
6 mm x 8 mm Fine Pitch BGA
10 ns
Industrial
GS71116AU-12I
6 mm x 8 mm Fine Pitch BGA
12 ns
Industrial
GS71116AGU-7
Pb-free 6 mm x 8 mm Fine Pitch BGA
7 ns
Commercial
GS71116AGU-8
Pb-free 6 mm x 8 mm Fine Pitch BGA
8 ns
Commercial
GS71116AGU-10
Pb-free 6 mm x 8 mm Fine Pitch BGA
10 ns
Commercial
GS71116AGU-12
Pb-free 6 mm x 8 mm Fine Pitch BGA
12 ns
Commercial
GS71116AGU-7I
Pb-free 6 mm x 8 mm Fine Pitch BGA
7 ns
Industrial
GS71116AGU-8I
Pb-free 6 mm x 8 mm Fine Pitch BGA
8 ns
Industrial
GS71116AGU-10I
Pb-free 6 mm x 8 mm Fine Pitch BGA
10 ns
Industrial
GS71116AGU-12I
Pb-free 6 mm x 8 mm Fine Pitch BGA
12 ns
Industrial
Status
*
Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. For example:
GS71116ATP-10T
Rev: 1.07 12/2004
15/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
GS71116ATP/J/U
1Mb Asynchronous Datasheet Revision History
Rev. Code: Old;
New
Types of Changes
Format or Content
Page #/Revisions/Reason
• Creation of new datasheet
71116A_r1
71116A_r1; 71116_r1_01
Content
• Added 6 ns speed bin to entire document
71116A_r1_01; 71116A
_r1_02
Content
• Updated all power numbers
• Changed 6 mm x 10 mm FPBGA package designator from U to X
71116A_r1_02; 71116A
_r1_03
Content
• Updated Recommended Operating Conditions table on page 4
• Changed FPBGA package from 6 x 10 to 6 x 8 (package U)
• Updated Read Cycle AC Characteristics table
71116A_r1_03; 71116A
_r1_04
Content
• Removed 6 ns speed bin from entire document
• Added 7 ns speed bin to entire document
71116A_r1_04;
71116A _r1_05
Content
71116A_r1_05;
71116A_r1_06
Content/Format
71116A_r1_06;
71116A_r1_07
Content/Format
Rev: 1.07 12/2004
• Updated timings for tBHZ (Read Cycle) for 10 ns and 12 ns
• Updated format
• Added Pb-free information for TSOP-II package
• Added Pb-free information for FP-BGA package
16/16
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, GSI Technology
Similar pages