IRF IR51H224 Self-oscillating half bridge Datasheet

Preliminary Data Sheet No. PD60083I
IR51H(D)224
IR51H(D)320
IR51H(D)420
SELF-OSCILLATING HALF BRIDGE
Product Summary
Features
•
•
•
•
Output Power MOSFETs in half-bridge configuration
High side gate drive designed for bootstrap operation
Bootstrap diode integrated into package (HD type)
Accurate timing control for both Power MOSFETs
Matched delay to get 50% duty cycle
Matched deadtime of 1.2us
• Internal oscillator with programmable frequency
f =
VIN (max) 250V (IR51H(D)224)
400V (IR51H(D)310)
500V (IR51H(D)420)
Duty Cycle
50%
Deadtime
Rds(on)
1
1. 4 × ( RT + 75 Ω ) × CT
• 15.6V Zener clamped Vcc for offline operation
• Half-bridge output is out of phase with RT
• Micropower startup
1.2µs
1.1W (IR51H(D)224)
3.0W (IR51H(D)310)
3.6W (IR51H(D)420)
PD (TA = 25oC)
2.0W
Package
Description
The IR51H(D)XXX are complete high voltage, high speed, selfoscillating half-bridge circuits. Proprietary HVIC and latch immune CMOS technologies, along with the HEXFET® power
MOSFET technology, enable ruggedized single package construction. The front-end features a programmable oscillator which functions similar to the CMOS 555 timer. The supply to the control
circuit has a zener clamp to simplify offline operation. The output
features two HEXFETs in a half-bridge configuration with an internally set deadtime designed for minimum cross-conduction in
the half-bridge. Propagation delays for the high and low side
power MOSFETs are matched to simplify
use in 50% duty cycle applications. The
device can operate up to 500 volts.
Typical Connection
DC Bus
VIN
D1
IR51H(D)XXX
1
2
Vcc
VB
RT
VIN
CT
VO
6
External
Fast recovery diode D1 is
not required for HD type
9
RT
3
7
CT
4
COM
COM
TO,
LOAD
IR51H(D)224
IR51H(D)320
IR51H(D)420
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All
voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any
lead. The thermal resistance and power dissipation ratings are measured under board mounted and
still air conditions.
Symbol
Definition
VIN
High voltage supply
VB
VO
VRT
VCT
Icc
IRT
dV/dt
PD
RthJA
TJ
TS
TL
High side floating supply
Half-bridge output
RT voltage
CT voltage
Supply current (note 1)
RT output current
Peak diode recovery
Package power dissipation @ TA ≤ +25°C
Thermal resistance, junction to ambient
Junction temperature
Storage temperature
Lead temperature (soldering, 10 seconds)
-224
-320
-420
Minimum
Maximum
Units
- 0.3
- 0.3
- 0.3
Vo - 0.3
250
400
500
Vo +2.5
V
-0.3
- 0.3
- 0.3
—
-5
—
—
—
-55
-55
—
VIN + 0.3
Vcc + 0.3
Vcc + 0.3
25
5
3.5
2.00
60
150
150
300
mA
V/ns
W
oC/W
oC
NOTE 1:
This IC contains a zener clamp structure between VCC and COM which has a nominal breakdown voltage of 15.6V.
Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP
specified in the Electrical Characteristics Section
2
IR51H(D)224
IR51H(D)320
IR51H(D)420
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation, the device should be used
within the recommended conditions.
Symbol
Definition
VB
VIN
High side floating supply absolute voltage
High voltage supply
VO
ID
Half-bridge output voltage
Continuous drain current (TA = 25°C)
Maximum
-224
-320
-420
Vo + 10
—
—
—
-224
-320
-3.0 (note 2)
—
—
Vo + Vclamp
250
400
500
VIN
-420
-224
-320
-420
(TA = 85°C)
ICC
TA
Minimum
V
1.1
0.9
—
—
—
—
(note 3)
-40
Supply current
Ambient temperature
Units
0.7
0.7
0.6
0.5
5
125
A
mA
°C
NOTE 2:
Care should be taken to avoid switching conditions where the VS node flies inductively below ground by more than 5V.
NOTE 3:
Enough current should be supplied to the VCC lead of the IC to keep the internal 15.6V zener diode clamping the
voltage at this lead.
Dynamic Electrical Characteristics
VBIAS (VCC, VBS) = 12V, TA = 25oC unless otherwise specified.
Symbol Definition
trr
Qrr
D
Reverse recovery time (MOSFET body diode)
-224
-320
-420
Reverse recovery charge (MOSFET body diode) -224
-320
-420
RT duty cycle
3
Min.
Typ.
Max.
—
200
270
240
—
—
—
—
—
—
—
—
—
—
—
—
—
0.7
0.6
0.5
50
Units Test Conditions
ns
µC
%
IF=1.1A
IF=900mA
di/dt
IF=700mA
=100
IF=1.1A
IF=900mA A/µs
IF=700mA
fosc = 20 kHz
IR51H(D)224
IR51H(D)320
IR51H(D)420
Static Electrical Characteristics
VBIAS (VCC, VB) = 12V, TA = 25oC unless otherwise specified.
Symbol Definition
VCCUV+ VCC supply undervoltage positive going
Min.
—
Typ.
8.4
Max.
—
UnitsTest Conditions
V
threshold
VCC supply undervoltage negative going
threshold
IQCC
Quiescent VCC supply current
VCLAMP VCC zener shunt clamp voltage
IQBS
Quiescent VBS supply current
—
8.0
—
V
—
—
—
300
15.6
30
µA
V
lOS
fOSC
—
—
—
20
—
—
—
50
—
—
100
—
—
—
—
—
—
—
—
—
—
0.001
100
20
200
20
200
100
8.0
4.0
1.0
—
—
—
—
—
—
—
—
—
1.1
—
—
—
—
—
—
1.8
3.0
—
—
—
—
—
VCCUV-
Offset supply leakage current
Oscillator frequency
ICT
VCTUV
VRT+
CT input current
CT undervoltage lockout
RT high level output voltage, VCC - R T
VRT-
RT low level output voltage
VRTUV
VCT+
VCT-
RT undervoltage lockout, VCC - RT
2/3 VCC threshold
1/3 VCC threshold
Rds(on) Static-drain-to-source on-resistance
VSD
Diode forward voltage
-224
-320
-420
-224
-320
-420
4
0.85
0.7
0.8
µA
kHz
VCC > VCCUV
ICC = 5mA
VB = VIN = 500V
RT = 35.7 kΩ
CT = 1 nF
RT = 7.04 kΩ
C T = 1 nF
µA
mV
Note 2
IRT = 100µA
IRT = -1mA
IRT = 100µA
IRT = -1mA
IRT = 100µA
kHz
Ω
V
IF=1.1A
IF=900mA di/dt
IF=700mA
=100
IF=1.1A
IF=900mA A/µs
IF=700mA
IR51H(D)224
IR51H(D)320
IR51H(D)420
Functional Block Diagram
V
VIN
B
6
D1
9
1
Vcc
IRFCXXX
IR2151
2
R
H
O
V
S
L
3
C
7
VO
T
O
IRFCXXX
T
4
COM
Fast recovery diode D1 is
incorporated in IR51HDXXX only
Lead Definitions
Symbol
Lead Description
VCC
Logic and internal gate drive supply voltage. An internal zener clamp diode at 15.6 V norminal is included
to allow the VCC to be current fed directly from VIN typically by means of a high value resistor.
Oscillator timing resistor output; a resistor is connected from RT to CT. RT is out of phase with the halfbridge output (VO).
Oscillator timing capacitor input; a capacitor is connected from C T to COM in order to program the
oscillator frequency according to the following equation:
RT
CT
f =
VB
VIN
VO
COM
1
1. 4 × ( RT + 75 Ω ) × CT
CT PIN also invokes shutdown function (see note 2) where 75Ω is the effective impedence of the RT
output stage.
High side gate drive floating supply. For bootstrap operation a high voltage fast recovery diode is needed
to feed from VCC to VB. (HD type circuits incorporate this diode).
High voltage supply
Half Bridge output
Logic and low side of half bridge return
5
IR51H(D)224
IR51H(D)320
IR51H(D)420
Lead Assignments
1
2
3
4
9
6
1
2
3
Vcc
RT
CT
COM
6
7
9
7
4
9 Lead SIP without Leads 5 and 8
Vccuv+
V CLAMP
Vcc
RT
CT
V+
VO
0
Figure 1. Input/Output Timing Diagram
6
VB
VO
VIN
IR51H(D)224
IR51H(D)320
IR51H(D)420
Case Outline - 9 Lead SIP
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: INCH
3. Dimensions are shown in millimeters (inches)
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Data and specifications subject to change without notice. 3/22/99
7
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