IRFHM8329PbF VDSS 30 V VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) ±20 V Qg (typical) ID (@TC (Bottom) = 25°C) 13 6.1 HEXFET® Power MOSFET m 8.8 S S S G D nC 24 D D A D D PQFN 3.3X3.3 mm Applications Charge and Discharge Switch for Notebook PC Battery Application System/Load Switch Synchronous MOSFET for Buck Converters Features Low Thermal Resistance to PCB (<3.8°C/W) Low Profile (<1.05 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Base part number Package Type IRFHM8329PbF PQFN 3.3 mm x 3.3 mm Benefits Enable better thermal dissipation Increased Power Density results in Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM8329TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 16 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 57 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 36 ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation 2.6 PD @TC(Bottom) = 25°C Power Dissipation 33 Linear Derating Factor TJ Operating Junction and TSTG Storage Temperature Range A 24 230 0.021 -55 to + 150 W W/°C °C Notes through are on page 9 1 2016-2-23 IRFHM8329PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage BVDSS Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.2 ––– ––– ––– ––– ––– 56 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 21 4.8 6.8 1.7 -6.0 ––– ––– ––– ––– ––– 26 13 2.9 2.0 4.6 3.5 6.6 7.8 1.4 14 74 14 14 1710 360 180 Max. ––– ––– 6.1 8.8 2.2 ––– 1.0 150 100 -100 ––– ––– 20 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA VGS = 10V, ID = 20A m VGS = 4.5V, ID = 16A V V = VGS, ID = 25µA mV/°C DS VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V nA VGS = -20V S VDS = 10V, ID = 20A nC VGS = 10V, VDS = 15V, ID = 20A nC nC VDS = 15V VGS = 4.5V ID = 20A VDS = 16V, VGS = 0V ns VDD = 15V, VGS = 4.5V ID = 20A RG=1.8 pF VGS = 0V VDS = 10V ƒ = 1.0MHz Avalanche Characteristics Parameter Single Pulse Avalanche Energy Avalanche Current EAS IAR Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge Typ. ––– ––– Max. 43 20 Units mJ A Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 13 8.1 Conditions MOSFET symbol 24 showing the A integral reverse 230 p-n junction diode. 1.0 V TJ = 25°C, IS = 20A, VGS = 0V 20 ns TJ = 25°C, IF = 20A, VDD = 15V 12 nC di/dt = 290A/µs D G S Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) RJA RJA (<10s) 2 Junction-to-Ambient Junction-to-Ambient Typ. ––– Max. 3.8 Units ––– 42 °C/W ––– ––– 47 32 2016-2-23 IRFHM8329PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 7.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V 10 1 2.5V 60µs PULSE WIDTH 100 BOTTOM 10 2.5V 60µs PULSE WIDTH Tj = 25°C Tj = 150°C 0.1 0.1 1 10 1 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics T J = 150°C 100 T J = 25°C 10 VDS = 10V 60µs PULSE WIDTH 2 3 4 5 6 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 -60 -40 -20 0 7 Fig 3. Typical Transfer Characteristics 10000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature 14 VGS, Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = Cds + Cgd C, Capacitance (pF) VGS 10V 7.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V Ciss 1000 Coss Crss ID= 20A 12 VDS= 24V VDS= 15V VDS= 6V 10 8 6 4 2 0 100 0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 10 20 30 40 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 2016-2-23 IRFHM8329PbF 1000 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 TJ = 150°C 10 TJ = 25°C 1 100 1.0 1.5 Limited by Package 1 DC 0.1 0.1 2.0 1 10 100 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 2.6 60 VGS(th) , Gate threshold Voltage (V) Limited by source bonding technology 50 ID , Drain Current (A) 10msec Tc = 25°C Tj = 150°C Single Pulse 0.1 0.5 1msec 10 VGS = 0V 0.0 100µsec 40 30 20 10 0 25 50 75 100 125 2.4 2.2 2.0 1.8 ID = 25µA ID = 250µA 1.6 1.4 ID = 1.0mA ID = 1.0A 1.2 1.0 0.8 150 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to–Source Breakdown Voltage Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2016-2-23 180 25 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance ( m) IRFHM8329PbF ID = 20A 20 15 10 T J = 125°C 5 T J = 25°C 0 0.0 4.0 8.0 12.0 16.0 ID 4.0A 8.6A BOTTOM 20A 160 TOP 140 120 100 80 60 40 20 0 20.0 25 VGS, Gate-to-Source Voltage (V) 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On– Resistance vs. Gate Voltage 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. (Single Pulse) 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 5 2016-2-23 IRFHM8329PbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A 0.01 I AS Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17a. Switching Time Test Circuit Fig 17b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 18a. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18b. Gate Charge Waveform 2016-2-23 IRFHM8329PbF PQFN 3.3 x 3.3 Outline “C” Package Details 8 7 6 5 1 2 3 4 3 4 6 5 1 8 2 7 PQFN 3.3 x 3.3 Outline “G” Package Details 8 7 6 5 #1 2 3 4 #1 2 3 4 8 7 6 5 For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 7 2016-2-23 IRFHM8329PbF PQFN 3.3mm x 3.3mm Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX ?YWW? XXXXX PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ PQFN 3.3mm x 3.3mm Outline Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2016-2-23 IRFHM8329PbF Qualification Information† Qualification Level Moisture Sensitivity Level RoHS Compliant Consumer†† (per JEDEC JESD47F††† guidelines) PQFN 3.3mm x 3.3mm MSL1 (per JEDEC J-STD-020D†††) Yes † †† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.22mH, RG = 50, IAS = 20A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. 9 2016-2-23 IRFHM8329PbF Revision History Date Comments 6/5/2014 Updated schematic on page 1 Updated package outline and part marking on page 7 Updated tape and reel on page 8 6/30/2014 Remove “SAWN” package outline on page 7. 2/23/2016 Updated datasheet with corporate template Updated package outline to reflect the PCN # (241-PCN30-Public) for “Option C” and “Option G” on page 7. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2016-2-23