IRF CPU165MK Igbt sip module short circuit rated ultrafast igbt Datasheet

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Preliminary Data Sheet PD - 5.036
CPU165MK
Short Circuit Rated UltraFast IGBT
IGBT SIP MODULE
Features
1,2
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
•
4
5
Q1
D1
6,7
9
Product Summary
Output Current in a Typical 20 kHz Motor Drive
10 ARMS with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%.
Q2
D2
11,12
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-1
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
tsc
VGE
VISOL
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
33
17
100
100
15
100
10
± 20
2500
83
33
-40 to +150
V
A
µs
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-961
To Order
Typ.
Max.
—
—
0.1
20 (0.7)
1.5
2.0
—
—
Units
°C/W
g (oz)
Revision 2
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CPU165MK
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.60 —
V/°C VGE = 0V, IC = 1.0mA
—
2.1
2.7
IC = 30A
V GE = 15V
—
2.6
—
V
IC = 52A
—
2.3
—
IC = 30A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-14
— mV/°C VCE = VGE, IC = 250µA
9.8
17
—
S
VCE = 100V, I C = 30A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 6500
VGE = 0V, V CE = 600V, T J = 150°C
—
1.3
1.7
V
IC = 25A
—
1.2
1.5
IC = 25A, T J = 150°C
—
— ±500
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
Min.
—
—
—
—
—
—
—
—
—
—
10
Typ.
120
27
44
74
100
260
190
1.9
2.6
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
77
100
530
360
7.3
2900
220
30
50
105
4.5
8.0
112
420
250
160
Max. Units
Conditions
200
IC = 30A
42
nC
VCC = 400V
73
—
TJ = 25°C
—
ns
IC = 30A, V CC = 480V
460
VGE = 15V, R G = 5.0Ω
290
Energy losses include "tail" and
—
diode reverse recovery.
—
mJ
7.0
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, R G = 5.0Ω, VCPK < 500V
—
TJ = 150°C,
—
ns
IC = 30A, V CC = 480V
—
VGE = 15V, R G = 5.0Ω
—
Energy losses include "tail" and
—
mJ
diode reverse recovery.
—
VGE = 0V
—
pF
VCC = 30V
—
ƒ = 1.0MHz
75
ns
TJ = 25°C
160
TJ = 125°C
I F = 25A
10
A
TJ = 25°C
15
TJ = 125°C
V R = 200V
375
nC
TJ = 25°C
1200
TJ = 125°C
di/dt = 200A/µs
—
A/µs TJ = 25°C
—
TJ = 125°C
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 5.0Ω.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs,
single shot.
Refer to Section D - page D-13 for Package Outline 4 - IMS-1 Package (10 pins)
C-962
To Order
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