NTUD3169CZ Small Signal MOSFET 20 V, 220 mA / −200 mA, Complementary, 1.0 x 1.0 mm SOT−963 Package Features http://onsemi.com • Complementary MOSFET Device • Offers a Low RDS(on) Solution in the Ultra Small 1.0x1.0 mm • • • Package 1.5 V Gate Voltage Rating Ultra Thin Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin Environments such as Portable Electronics. This is a Pb−Free Device Applications • Load Switch with Level Shift • Optimized for Power Management in Ultra Portable Equipment V(BR)DSS Value Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±8 V P−Channel Continuous Drain Current (Note 1) Power Dissipation (Note 1) Steady State TA = 25°C 220 TA = 85°C 160 tv5s TA = 25°C Steady State TA = 25°C TA = 85°C −140 tv5s TA = 25°C −250 Steady State ID TA = 25°C N−Channel P−Channel 4.5 W @ 1.5 V 5.0 W @ −4.5 V P−Channel 20 V 6.0 W @ −2.5 V −0.2 A 7.0 W @ −1.8 V 10 W @ −1.5 V 280 −200 mA S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM PD mW 200 tp = 10 ms Operating Junction and Storage Temperature IDM 800 −600 mA TJ, TSTG −55 to 150 °C Source Current (Body Diode) (Note 2) IS 200 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. 2. Pulse Test: pulse width v300 ms, duty cycle v2% © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 0 0.22 A 3.0 W @ 1.8 V 125 tv5s Pulsed Drain Current 2.0 W @ 2.5 V N−Channel 20 V PINOUT: SOT−963 Symbol N−Channel Continuous Drain Current (Note 1) ID Max 1.5 W @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter RDS(on) Max 1 2MG SOT−963 CASE 527AD 2 M G 1 = Specific Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Device NTUD3169CZT5G Package Shipping† SOT−963 (Pb−Free) 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTUD3169CZ/D NTUD3169CZ THERMAL RESISTANCE RATINGS Parameter Junction−to−Ambient – Steady State, Minimum Pad (Note 3) Symbol Max Unit RqJA 1000 °C/W Junction−to−Ambient – t v 5 s (Note 3) 600 3. Surface−mounted on FR4 board using the minimum recommended pad size, 1 oz. Cu. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current N P N VGS = 0 V VGS = 0 V, VDS = 5.0 V IDSS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS P VGS = 0 V, VDS = −5.0 V N VGS = 0 V, VDS = 16 V P VGS = 0 V, VDS= −16 V N ID = 250 mA 20 ID = −250 mA −20 V TJ = 25°C 50 TJ = 85°C 200 TJ = 25°C −50 TJ = 85°C −200 100 TJ = 25°C −100 ±100 VDS = 0 V, VGS = ±5.0 V P ±100 nA nA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) Drain−to−Source On Resistance RDS(on) Forward Transconductance Source−Drain Diode Voltage gFS VSD N VGS = VDS P ID = 250 mA 0.4 1.0 ID = −250 mA −0.4 −1.0 N VGS = 4.5 V, ID = 100 mA 0.75 1.5 P VGS = −4.5V, ID = −100 mA 2.0 5.0 N VGS = 2.5 V, ID = 50 mA 1.0 2.0 P VGS = −2.5V, ID = −50 mA 2.6 6.0 N VGS = 1.8 V, ID = 20 mA 1.4 3.0 P VGS = −1.8V, ID = −20 mA 3.4 7.0 N VGS = 1.5 V, ID = 10 mA 1.8 4.5 P VGS = −1.5 V, ID = −10 mA 4.0 10 N VGS = 1.2 V, ID = 1.0 mA 2.8 P VGS = −1.2 V, ID = −1.0 mA 6.0 N VDS = 5.0 V, ID = 125 mA 0.48 P VDS = −5.0 V, ID = −125 mA 0.35 N VGS = 0 V, IS = 10 mA P VGS = 0 V, IS = −10 mA TJ = 25°C V W S 0.6 1.0 −0.6 −1.0 V CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 12.5 f = 1 MHz, VGS = 0 V VDS = 15 V N 3.6 2.6 13.5 f = 1 MHz, VGS = 0 V VDS = −15 V P 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 3.8 2.0 pF NTUD3169CZ ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol N/P Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 16.5 N VGS = 4.5 V, VDD = 10 V, ID = 200 mA, RG = 2.0 W 25.5 142 tf 80 td(ON) 26 tr td(OFF) P VGS = −4.5 V, VDD = −15 V, ID = −200 mA, RG = 2.0 W tf 46 196 145 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 ns NTUD3169CZ TYPICAL CHARACTERISTICS (N−CHANNEL) VGS = 2 thru 5 V 1.8 V 1.4 V 0.2 1.2 V 0.1 0 1 2 3 4 0.2 0.1 0 1 2 3 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 1.50 ID = 220 mA TJ = 25°C 3 2 1 0 1 2 3 4 TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.25 VGS = 2.5 V 1.00 VGS = 4.5 V 0.75 0.50 0.25 0 5 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.75 10,000 VGS = 0 V ID = 100 mA 1.50 VGS = 4.5 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 25°C 0.3 0 5 4 0 TJ = −55°C VDS ≥ 5 V 1.6 V 0.3 0 0.4 TJ = 25°C ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.4 1000 1.25 1.00 TJ = 150°C TJ = 125°C 100 0.75 0.50 −50 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 20 NTUD3169CZ TYPICAL CHARACTERISTICS (N−CHANNEL) 20.0 17.5 t, TIME (ns) 12.5 10.0 VDD = 10 V ID = 200 mA VGS = 4.5 V TJ = 25°C Ciss 15.0 Coss 7.50 td(off) 100 tf tr td(on) 10 5.00 Crss 2.50 0 0 5 10 15 1 20 1 10 100 GATE−TO−SOURCE AND DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 7. Capacitance Variation Figure 8. Resistive Switching Time Variation vs. Gate Resistance 0.200 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 1000 VGS = 0 V VGS = 0 V 0.175 TJ = 25°C 0.150 0.125 0.100 0.075 0.050 0.025 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 5 1 NTUD3169CZ TYPICAL CHARACTERISTICS (P−CHANNEL) 2.0 V ID, DRAIN CURRENT (A) 0.32 VGS = 2.2 thru 5 V 0.28 0.36 TJ = 25°C 1.8 V 0.24 1.6 V 0.20 0.16 1.4 V 0.12 0.08 1.2 V 0.24 0.20 0.16 0.12 0.08 0 1 2 3 4 0 5 2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 10. On−Region Characteristics Figure 11. Transfer Characteristics ID = 200 mA TJ = 25°C RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 1 4 8 4 1 2 3 4 3 VGS = 2.5 V 2 VGS = 4.5 V 1 0 5 TJ = 25°C 0.05 0.10 0.15 0.20 0.25 0.30 0.35 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 12. On−Resistance vs. Gate Voltage Figure 13. On−Resistance vs. Drain Current and Gate Voltage 1.75 10,000 ID = 200 mA VGS = 0 V VGS = 4.5 V 1.50 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 12 0 TJ = 25°C 0.28 0.04 0.04 0 TJ = 125°C TJ = −55°C VDS ≥ 5 V 0.32 ID, DRAIN CURRENT (A) 0.36 1000 1.25 1.00 TJ = 150°C TJ = 125°C 100 0.75 0.50 −50 −25 0 25 50 75 100 125 150 10 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 14. On−Resistance Variation with Temperature Figure 15. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 6 20 NTUD3169CZ TYPICAL CHARACTERISTICS (P−CHANNEL) 18 1000 Ciss 14 10 t, TIME (ns) 12 VGS = 0 V Coss 8 TJ = 25°C 6 td(off) tf 100 tr td(on) 10 4 0 VDD = 10 V ID = 200 mA VGS = 4.5 V Crss 2 0 2 4 6 8 10 12 14 16 18 1 20 1 10 100 DRAIN−TO−SOURCE VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 16. Capacitance Variation Figure 17. Resistive Switching Time Variation vs. Gate Resistance 0.18 VGS = 0 V 0.16 IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 16 TJ = 25°C 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0 0.2 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 18. Diode Forward Voltage vs. Current http://onsemi.com 7 1 NTUD3169CZ PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE D D 6 A B 5 4 1 2 3 A L HE E e 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C DIM A b C D E e L HE C b 0.08 C A B MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN INCHES NOM MAX 0.004 0.003 0.037 0.03 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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