TSC BZX85C5V6 1.3 watts zener diode Datasheet

BZX85C3V3 - BZX85C 5 6
1.3 Watts Zener Diode
Pb
RoHS
DO-41
COMPLIANCE
Features
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Silicon Planar Power Zener Diodes
For use in stabilizing and clipping circuits with
high power rating
The Zener voltages are graded according to
the international E24 standard. Replace suffix
“C”
Hermetically sealed by glass sleeve body
Mechanical Data
Case: Glass sleeve DO-41
Lead: Axial leads, solderable per
MIIL-STD-202, Method 2025
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 310 mg (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol
Pd
RθJA
TJ, TSTG
Value
1.3
130
-55 to + 175
Notes: 1. Measured with pulses tp=5ms
2. Valid Provided that Lead are Kept at Ambient Temperature at a distance of
10 mm from case..
3. f = 1KHz.
Version: C08
Units
W
O
C /W
O
C
ELECTRICAL CHARACTERISTICS (TA=25OC
Device
Zener Voltage
Range (Note 1)
Vz @ Izt
Min V Max
unless otherwise noted)
Dynamic Resistance
fZT
(Note 3)
Ohm
IZK
mA
fZT
(Note 3)
Ohms
Temperature
Coefficient of
Zener Voltage
mA
O
Min% / CMax
IZT
VZ
@ IZ= IZT
Admissible
Zener
Reverse Leakage Current
Current
(Note 2)
IZ
IR
VR
uA
V
mA
BZX85C3V3
3.1
3.5
<20
80
<400
1
-0.08
-0.05
<40
1.0
300
BZX85C3V6
3.4
3.8
<20
60
<500
1
-0.08
-0.05
<20
1.0
290
BZX85C3V9
3.7
4.1
<15
60
<500
1
-0.07
-0.02
<10
1.0
280
BZX85C4V3
4
4.6
<13
50
<500
1
-0.05
0.01
<3
1.0
250
BZX85C4V7
4.4
5.0
<13
45
<600
1
-0.03
0.04
<3
1.0
215.0
BZX85C5V1
4.8
5.4
<10
45
<500
1
-0.01
0.04
<1
1.5
200.0
BZX85C5V6
5.2
6
<7
45
<400
1
0
0.045
<1
2.0
190.0
BZX85C6V2
5.8
6.6
<4
35
<300
1
0.01
0.055
<1
3.0
170.0
BZX85C6V8
6.4
7.2
<3.5
35
<300
1
0.015
0.06
<1
4.0
155.0
BZX85C7V5
7
7.9
<3
35
<200
0.5
0.02
0.065
<1
4.5
140.0
BZX85C8V2
7.7
8.7
<5
25
<200
0.5
0.03
0.07
<1
6.2
130.0
BZX85C9V1
8.5
9.6
<5
25
<200
0.5
0.035
0.075
<1
6.8
120.0
BZX85C10
9.4
10.6
<7
25
<200
0.5
0.04
0.08
<0.5
7.5
105.0
BZX85C11
10.4
11.6
<8
20
<300
0.5
0.045
0.08
<0.5
8.2
97.0
BZX85C12
11.4
12.7
<9
20
<350
0.5
0.045
0.085
<0.5
9.1
88.0
BZX85C13
12.4
14.1
<10
20
<400
0.5
0.05
0.085
<0.5
10
79.0
BZX85C15
13.8
15.6
<15
15
<500
0.5
0.055
0.09
<0.5
11
71.0
BZX85C16
15.3
17.1
<15
15
<500
0.5
0.055
0.09
<0.5
12
66.0
BZX85C18
16.8
19.1
<20
15
<500
0.5
0.06
0.09
<0.5
13
62.0
BZX85C20
18.8
21.2
<24
10
<600
0.5
0.06
0.09
<0.5
15
56.0
BZX85C22
20.8
23.3
<25
10
<600
0.5
0.06
0.095
<0.5
16
52.0
BZX85C24
22.8
25.6
<25
10
<600
0.5
0.06
0.095
<0.5
18
47.0
BZX85C27
25.1
28.9
<30
8
<750
0.25
0.06
0.095
<0.5
20
41.0
BZX85C30
28
32
<30
8
<1000
0.25
0.06
0.095
<0.5
22
36.0
BZX85C33
31
35
<35
8
<1000
0.25
0.06
0.095
<0.5
24
33.0
BZX85C36
34
38
<40
8
<1000
0.25
0.06
0.095
<0.5
27
30.0
BZX85C39
37
41
<50
6
<1000
0.25
0.06
0.095
<0.5
30
28.0
BZX85C43
40
46
<50
6
<1000
0.25
0.06
0.095
<0.5
33
26.0
BZX85C47
44
50
<90
4
<1500
0.25
0.06
0.095
<0.5
36
23.0
BZX85C51
48
54
<115
4
<1500
0.25
0.06
0.095
<0.5
39
21.0
BZX85C56
52
60
<120
4
<2000
0.25
0.06
0.095
<0.5
43
19.0
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
Version: C08
RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES)
FIG.1- PULSE THERMAL RESISTANCE VS
PULSE DURATION
FIG.3- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.5- ADMISSIBLE POWER DISSIPATION VS
FIG.2- DYNAMIC RESISTANCE VS ZENER CURRENT
FIG.4- THERMAL RESISTANCE VS LEAD LENGTH
FIG.6- DYNAMIC RESISTANCE VS ZENER CURRENT
AMBIENT TEMPERATURE
Version: B08
RATINGS AND CHARACTERISTIC CURVES (BZX85C SERIES)
FIG.7- BREAKDOWN CHARACTERISTICS
FIG.8- BREAKDOWN CHARACTERISTICS
Version: C08
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