Fairchild FS6S1565RB Fairchild power switch(fps) Datasheet

www.fairchildsemi.com
FS6S1565RB
Fairchild Power Switch(FPS)
Features
Description
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The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, optimized gate turn-on/turn-off
driver, thermal shut down protection, over voltage protection,
and temperature compensated precision current sources for
loop compensation and fault protection circuitry. compared to
discrete MOSFET and controller or RCC switching
converter solution, a Fairchild Power Switch(FPS) can
reduce total component count, design size, and weight and at
the same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for cost
effective monitor power supply.
Wide operating frequency range up to 150Khz
Internal Burst mode Controller for Stand-by mode
Pulse by pulse over current limiting
Over current protection(Auto restart mode)
Over voltage protection (Auto restart mode)
Over load protection(Auto restart mode)
Internal thermal shutdown function(Auto restart mode)
Under voltage lockout
Internal high voltage sense FET
Eternal sync terminal/Soft start
TO-3P-5L
1
Internal Block Diagram
3
Vref
1
Vpp=5.8/7.2V
Internal
Bias
OSC
5
Vref
Vref
UVLO
Burst mode
controller
Vfb
Vth=1V
S
Ron
Q
R
Vcc
Vth=11V/12V
Roff
PWM
4
2.5R
R
Ifb
Vref
Vfb Offset
Vcc
Rsenese
Idelay
OCL
OLP
Vth=7.5V
S
Vcc
Vth=30V
OVP
UVLO Reset
(Vcc=9V)
R
Q
Q
Filter
(130nsec)
S
R
UVLO Reset
(Vcc=9V)
Vth=1V
2
TS
D
(Tj=160℃)
Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
FS6S1565RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Symbol
Value
Unit
VDSS
650
V
VDGR
650
V
Gate-source (GND) Voltage
VGS
±30
V
Drain current pulsed (2)
IDM
60
ADC
EAS
1040
mJ
IAS
37
A
Drain-source(GND) voltage
(1)
Drain-Gate Voltage (RGS=1MΩ)
Single pulsed avalanche energy (3)
Single Pulsed Avalanche current
(4)
Continuous drain current (Tc = 25°C)
ID
15
ADC
Continuous drain current (TC=100°C)
ID
9.5
ADC
VCC
35
V
VFB
−0.3 to VCC
V
VS_S
−0.3 to 10
V
Supply voltage
Input Voltage Range
PD(Watt H/S)
270
W
Derating
2.17
W/°C
Operating junction temperature
Tj
+160
°C
Operating Ambient Temperature
TA
−25 to +85
°C
TSTG
−55 to +150
°C
Total Power Dissipation
Storage Temperature range
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=8.5mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
2
FS6S1565RB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance (note)
Symbol
Min.
Typ.
Max.
Unit
VGS = 0V, ID = 250µA
650
-
-
V
VDS = 650V, VGS = 0V
-
-
200
µA
IDSS
VDS = 520V
VGS = 0V, TC = 125°C
-
-
300
µA
BVDSS
Condition
RDS(ON)
VGS = 10V, ID = 7.5A
-
0.5
0.65
Ω
Forward transconductance (note)
gfs
VDS = 50V, ID = 7.5A
-
-
-
S
Input capacitance
Ciss
-
2580
-
-
270
-
-
50
-
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn on delay time
td(on)
Rise time
Turn off delay time
Fall time
tr
td(off)
tf
VGS = 0V, VDS = 25V,
f = 1MHz
VDD = 325V, ID = 15A
(MOSFET switching
time are essentially
independent of
operating temperature)
Total gate charge
(gate-source+gate-drain)
Qg
Gate source charge
Qgs
Gate drain (Miller) charge
Qgd
VGS = 10V, ID = 15A,
VDS = 520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
Single Pulsed Avalanche current (1)
IAS
VCC = VFB = VSS = GND
-
50
-
-
155
-
-
270
-
-
125
-
-
90
-
-
15
-
-
45
-
-
37
-
pF
nS
nC
A
Note:
Pulse test : Pulse width ≤ 300µS, duty 2%
1
S = ---R
1. L=13uH, starting Tj=25°C
3
FS6S1565RB
Electrical Characteristics
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
UVLO SECTION
Start threshold voltage
VSTART
VFB = GND
14
15
16
V
Stop threshold voltage
VSTOP
VFB = GND
8
9
10
V
Drain to PKG Breakdown voltage
BVpkg
60HZ AC, Ta = 25°C
3500
-
-
V
Drain to Source Breakdown voltage
BVdss
Vdrain = 650V, Ta = 25°C
650
-
-
V
Idss
Vdrain = 650V, Ta = 25°C
-
-
300
uA
Initial Frequency
FOSC
-
22
25
28
kHz
Voltage Stability
FSTABLE
12V ≤ Vcc ≤ 23V
0
1
3
%
-25°C ≤ Ta ≤ 85°C
0
±5
±10
%
SENSEFET SECTION
Drain to Source Leakage current
OSCILLATOR SECTION
Temperature Stability (note4)
∆FOSC
Maximum duty cycle
DMAX
-
92
95
98
%
Minimum Duty Cycle
DMIN
-
-
-
0
%
FEEDBACK SECTION
Feedback source current
IFB
VFB = GND
0.7
0.9
1.1
mA
Shutdown Feedback voltage
VSD
Vfb ≥ 6.9V
6.9
7.5
8.1
V
Idelay
VFB = 5V
1.6
2.0
2.4
µA
Over Voltage Protection
VOVP
Vsync ≥ 11V
27
30
33
V
Over Current Latch Voltage (Note2)
VOCL
-
0.9
1.0
1.1
V
TSD
-
140
160
-
°C
Shutdown delay current
PROTECTION SECTION
Thermal Shutdown Temp.(Note4)
4
FS6S1565RB
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Sync & SOFTSTART SECTION
Softstart Vortage
VSS
Vfb = 2
4.7
ISS
Vss = V
5.0
5.3
V
0.8
1.0
1.2
mA
Sync High Threshold Voltage
VSYNCH
Vcc = 16V, Vfb = 5V
-
7.2
-
V
Sync Low Threshold Voltage
VSYNCL
Vcc = 16V, Vfb = 5V
-
5.8
-
V
Burst mode Low Threshold Voltage
VBURL
Vfb = 0V
10.4
11.0
11.6
V
Burst mode High Threshold Voltage
VBURH
Vfb = 0V
11.4
12.0
12.6
V
VBEN
Vcc = 10.5V
0.7
1.0
1.3
V
IBU_PK
Vcc = 10.5V
0.6
0.85
1.1
V
Vcc = 10.5V, Vfb = 0V
40
50
60
KHz
8.5
9.7
10.9
A
-
0.1
0.17
mA
-
10
15
mA
Softstart Current
BURST MODE SECTION
Burst mode Enable Feedback Voltage (Note4)
Burst mode Peak Current Limit (Note3)
Burst mode Frequency
FBUR
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (Note3)
IOVER
-
TOTAL DEVICE SECTION
Start Up current
Operating supply current (Note1)
ISTART
Vfb = GND, VCC = 14V
IOP
Vfb = GND, VCC = 16V
IOP(MIN)
Vfb = GND, VCC = 10V
IOP(MAX)
Vfb = GND, VCC = 28V
Notes:
(1) These parameters is the current flowing in the Control IC.
(2) These parameters, although guaranteed, are tested in EDS(wafer test) process.
(3) These parameters indicate Inductor Current.
(4) These parameters, although guranteed at the design, are not tested in massing production.
5
FS6S1565RB
Typical Performance Characteristics
Start Up Current vs. Temp
0.150 [mA]
0.125
10.5
0.100
10.0
0.075
9.5
0.050
-25
Operating Current vs. Temp
[mA]
11.0
0
25
50
75
100
125
150
9.0
-25
0
25
Temp
Start Threshold Voltage vs. Temp
10.0
9.5
15.0
9.0
14.5
8.5
0
25
50
75
100
125
150
[V]
125
150
8.0
-25
Stop Threshold Voltage vs. Temp
0
25
Temp
50
75
100
125
150
Temp
Figure 3. Start Threshold Voltage vs. Temp
[KHz]
100
Figure 2. Operating Current vs. Temp
15.5
14.0
-25
75
Temp
Figure 1. Start Up Current vs. Temp
16.0 [V]
50
Figure 4. Stop Threshold Voltage vs. Temp
Initial Freqency vs. Temp
96.0
28
Maximum Duty vs. Temp
[%]
27
95.5
26
95.0
25
24
94.5
23
22
-25
0
25
50
75
100
125
Temp
Figure 5. Initial Freqency vs. Temp
6
150
94.0
-25
0
25
50
75
100
125
Temp
Figure 6. Maximum Duty vs. Temp
150
FS6S1565RB
Typical Performance Characteristics (Continued)
0.45
[V]
Feedback Offset Voltage vs. Temp
1.1
0.40
[mA] Feedback Source Current vs. Temp
1.0
0.35
0.9
0.30
0.8
0.25
0.20
-25
0
25
50
75
100
125
150
0.7
-25
0
25
Temp
[uA] ShutDown Delay Current vs. Temp
2.0
7.50
1.8
7.45
25
50
75
100
125
150
7.40
-25
0
25
Figure 9. ShutDown Delay Current vs. Temp
75
100
125
150
[V]
OverVoltage Protection vs. Temp
31.0
5.01
30.5
5.00
30.0
4.99
29.5
4.98
-25
50
Figure 10. ShutDown Feedback Voltage vs. Temp
Softstart Voltage vs. Temp
[V]
150
Temp
Temp
5.02
125
[V] ShutDown Feedback Voltage vs. Temp
7.60
7.55
0
100
Figure 8. Feedback Source Current vs. Temp
2.2
1.6
-25
75
Temp
Figure 7. Feedback Offset Voltage vs. Temp
2.4
50
0
25
50
75
100
125
Temp
Figure 11. Softstart Voltage vs. Temp
150
29.0
-25
0
25
50
75
100
125
150
Temp
Figure 12. OverVoltage Protection vs. Temp
7
FS6S1565RB
Typical Performance Characteristics (Continued)
[V]
Burst Mode Low Voltage vs. Temp
[V]
11.2
12.2
11.1
12.1
11.0
12.0
10.9
11.9
10.8
-25
0
25
50
75
100
125
150
11.8
-25
Burst Mode High Voltage vs. Temp
0
25
Temp
75
100
125
150
Temp
Figure 13. Burst Mode Low Voltage vs. Temp
Burst Mode Freqency vs. Temp
[KHz]
50
54
Figure 14. Burst Mode High Voltage vs. Temp
1.3
[V] Burst ModeEnable Voltage vs. Temp
1.2
52
1.1
1.0
50
0.9
48
0.8
46
-25
0
25
50
75
100
125
150
0.7
-25
0
25
Figure 15. Burst Mode Freqency vs. Temp
5.02
Softstart Voltage vs. Temp
[V]
30.0
4.99
29.5
50
75
100
125
Temp
Figure 17. Softstart Voltage vs. Temp
8
[V]
5.00
25
100
125
150
OverVoltage Protection vs. Temp
31.0
30.5
0
75
Figure 16. Burst ModeEnable Voltage vs. Temp
5.01
4.98
-25
50
Temp
Temp
150
29.0
-25
0
25
50
75
100
125
150
Temp
Figure 18. OverVoltage Protection vs. Temp
FS6S1565RB
Typical Performance Characteristics (Continued)
[V]
Burst Mode Low Voltage vs. Temp
[V]
11.2
12.2
11.1
12.1
11.0
12.0
10.9
11.9
10.8
-25
0
25
50
75
100
125
150
11.8
-25
Burst Mode High Voltage vs. Temp
0
25
Figure 19. Burst Mode Low Voltage vs. Temp
75
100
125
150
Figure 20. Burst Mode High Voltage vs. Temp
Burst Mode Freqency vs. Temp
[KHz]
50
Temp
Temp
54
1.3
[V] Burst ModeEnable Voltage vs. Temp
1.2
52
1.1
50
1.0
0.9
48
0.8
46
-25
0
25
50
75
100
125
150
0.7
-25
0
25
Temp
50
75
100
125
150
Temp
Figure 21. Burst Mode Freqency vs. Temp
[A] Burst Mode Peak Current vs. Temp
1.00
Figure 22. Burst ModeEnable Voltage vs. Temp
Over Current Limit vs. Temp
[A]
10.0
0.95
9.8
0.90
9.6
0.85
0.80
-25
0
25
50
75
100
125
150
Temp
Figure 23. Burst Mode Peak Current vs. Temp
9.4
-25
0
25
50
75
100
125
150
Temp
Figure 24. Over Current Limit vs. Temp
9
FS6S1565RB
Package Dimensions
TO-3P-5L
10
FS6S1565RB
Package Dimensions
TO-3P-5L (Forming)
11
FS6S1565RB
Ordering Information
Product Number
FS6S1565RB-TU
FS6S1565RB-YDTU
Package
TO-3P-5L
TO-3P-5L(Forming)
Marking Code
BVdss
Rds(on)
6S1565RB
650V
0.5
TU : Non Forming Type
YDTU : Forming Type
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
www.fairchildsemi.com
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 2001 Fairchild Semiconductor Corporation
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