ONSEMI NSI45020AT1G

NSI45020AT1G
Constant Current Regulator
& LED Driver
45 V, 20 mA + 10%, 460 mW Package
The linear constant current regulator (CCR) is a simple, economical
and robust device designed to provide a cost−effective solution for
regulating current in LEDs. The CCR is based on patent-pending
Self-Biased Transistor (SBT) technology and regulates current over a
wide voltage range. It is designed with a negative temperature
coefficient to protect LEDs from thermal runaway at extreme voltages
and currents.
The CCR turns on immediately and is at 25% of regulation with
only 0.5 V Vak. It requires no external components allowing it to be
designed as a high or low−side regulator. The high anode-cathode
voltage rating withstands surges common in Automotive, Industrial
and Commercial Signage applications. The CCR comes in thermally
robust packages and is qualified to AEC-Q101 standard.
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Ireg(SS) = 20 mA
@ Vak = 7.5 V
Anode 2
Features
•
•
•
•
•
•
•
•
Cathode 1
Robust Power Package: 460 mW
Wide Operating Voltage Range
Immediate Turn-On
Voltage Surge Suppressing − Protecting LEDs
AEC-Q101 Qualified
SBT (Self−Biased Transistor) Technology
Negative Temperature Coefficient
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
2
1
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
Applications
• Automobile: Chevron Side Mirror Markers, Cluster, Display &
•
•
•
•
Instrument Backlighting, CHMSL, Map Light
AC Lighting Panels, Display Signage, Decorative Lighting, Channel
Lettering
Switch Contact Wetting
Application Note AND8391/D − Power Dissipation Considerations
Application Note AND8349/D − Automotive CHMSL
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction
Temperature Range
ESD Rating:
Human Body Model
Machine Model
AD
M
G
AD M G
G
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
Value
Unit
Device
Package
Vak Max
45
V
NSI45020AT1G
VR
500
mV
SOD−123
(Pb−Free)
TJ, Tstg
−55 to +150
°C
ESD
2
ORDERING INFORMATION
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
1
Class 1C
Class B
Shipping†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2009
November, 2009 − Rev. 4
1
Publication Order Number:
NSI45020A/D
NSI45020AT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
1.
2.
3.
4.
Symbol
Min
Typ
Max
Unit
Ireg(SS)
18
20
22
mA
Voverhead
1.8
19.85
22.5
V
Pulse Current @ Vak = 7.5 V (Note 3)
Ireg(P)
Capacitance @ Vak = 7.5 V (Note 4)
C
2.5
25.15
mA
pF
Capacitance @ Vak = 0 V (Note 4)
C
5.7
pF
Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 10 sec, using FR−4 @ 300 mm2 1 oz. Copper traces, in still air.
Voverhead = Vin − VLEDs. Voverhead is typical value for 85% Ireg(SS).
Ireg(P) non−repetitive pulse test. Pulse width t ≤ 300 msec.
f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 5) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient (Note 5)
Symbol
Max
Unit
PD
208
1.66
mW
mW/°C
RθJA
600
°C/W
Thermal Reference, Lead−to−Ambient (Note 5)
RψLA
404
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 5)
RψJL
196
°C/W
PD
227
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 6)
RθJA
550
°C/W
Thermal Reference, Lead−to−Ambient (Note 6)
RψLA
390
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 6)
RψJL
160
°C/W
PD
347
2.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 7)
RθJA
360
°C/W
Thermal Reference, Lead−to−Ambient (Note 7)
RψLA
200
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 7)
RψJL
160
°C/W
PD
368
2.9
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 8)
RθJA
340
°C/W
Thermal Reference, Lead−to−Ambient (Note 8)
RψLA
208
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 8)
RψJL
132
°C/W
PD
436
3.5
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 9)
RθJA
287
°C/W
Thermal Reference, Lead−to−Ambient (Note 9)
RψLA
139
°C/W
Thermal Reference, Junction−to−Cathode Lead (Note 9)
RψJL
148
°C/W
PD
463
3.7
mW
mW/°C
Thermal Resistance, Junction−to−Ambient (Note 10)
RθJA
270
°C/W
Thermal Reference, Lead−to−Ambient (Note 10)
RψLA
150
°C/W
RψJL
120
°C/W
TJ, Tstg
−55 to +150
°C
Total Device Dissipation (Note 6) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 7) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 8) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 9) TA = 25°C
Derate above 25°C
Total Device Dissipation (Note 10) TA = 25°C
Derate above 25°C
Thermal Reference, Junction−to−Cathode Lead (Note 10)
Junction and Storage Temperature Range
mm2,
mm2,
mm2,
mm2,
mm2,
mm2,
5. FR−4 @ 100
1 oz. copper traces, still air.
2 oz. copper traces, still air.
6. FR−4 @ 100
1 oz. copper traces, still air.
7. FR−4 @ 300
2 oz. copper traces, still air.
8. FR−4 @ 300
1 oz. copper traces, still air.
9. FR−4 @ 500
2 oz. copper traces, still air.
10. FR−4 @ 500
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
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2
NSI45020AT1G
TYPICAL PERFORMANCE CURVES
Minimum FR−4 @ 300 mm2, 1 oz Copper Trace, Still Air
50
40
30
20
VR
10
0
−10
−20
−10
0
10
20
30
50
40
60
TA = −40°C
20
TA = 85°C
15
10
5
0
DC Test Steady State, Still Air
0
1
2
4
5
6
7
8
9
Figure 1. General Performance Curve for CCR
Figure 2. Steady State Current (Ireg(SS)) vs.
Anode−Cathode Voltage (Vak)
Ireg(SS), STEADY STATE CURRENT (mA)
TA = 25°C
22.0
21.5
21.0
20.5
20.0
3.0
Non−Repetitive Pulse Test
4.0
5.0
6.0
7.0
8.0
9.0
10
Vak @ 7.5 V
TA = 25°C
21
20
19
18
19
21
20
22
23
25
24
26
Ireg(P), PULSE CURRENT (mA)
Figure 3. Pulse Current (Ireg(P)) vs.
Anode−Cathode Voltage (Vak)
Figure 4. Steady State Current vs. Pulse
Current Testing
800
23
PD, POWER DISSIPATION (mW)
Vak @ 7.5 V
TA = 25°C
22
21
20
0
5
10
15
20
25
30
700
500 mm2/2 oz
600
500
500 mm2/1 oz
400 300
mm2/1
300 mm2/2 oz
oz
300
200
100 mm2/2 oz
100
100
−40
35
mm2/1
−20
oz
0
20
40
60
80
TIME (s)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Regulation vs. Time
Figure 6. Power Dissipation vs. Ambient
Temperature @ TJ = 1505C
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3
10
22
Vak, ANODE−CATHODE VOLTAGE (V)
Ireg, CURRENT REGULATION (mA)
3
Vak, ANODE−CATHODE VOLTAGE (V)
22.5
19
[ −0.052 mA/°C
typ @ Vak = 7.5 V
[ −0.044 mA/°C
typ @ Vak = 7.5 V
TA = 25°C
Vak, ANODE−CATHODE VOLTAGE (V)
23.0
Ireg(P), PULSE CURRENT (mA)
25
Ireg(SS), STEADY STATE CURRENT (mA)
Ireg, CURRENT REGULATION (mA)
60
NSI45020AT1G
APPLICATIONS
D1
Anode
D1
Q1
Q2
Qx
LED
LED
LED
Anode
Cathode
+
−
Vin
Q1
Q2
Qx
Cathode
HF3−R5570
HF3−R5570
+
−
HF3−R5570
Vin
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
HF3−R5570
LED
LED
HF3−R5570
HF3−R5570
LED
LED
HF3−R5570
HF3−R5570
Figure 7. Typical Application Circuit
(20 mA each LED String)
Figure 8. Typical Application Circuit
(60 mA each LED String)
Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode
LED’s = ((Vin − QX VF + D1 VF)/LED VF)
Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V
LED VF = 2.2 Vdc @ 20 mA
(12 Vdc − 4.2 Vdc)/2.2 Vdc = 3 LEDs in series.
Number of LED’s that can be connected is determined by:
D1 is a reverse battery protection diode
Example: Vin = 12 Vdc, QX VF = 3.5 Vdc, D1VF = 0.7 V
LED VF = 2.6 Vdc @ 60 mA
(12 Vdc − (3.5 + 0.7 Vdc))/2.6 Vdc = 3 LEDs in series.
Number of Drivers = LED current/20 mA
60 mA/20 mA = 3 Drivers (Q1, Q2, Q3)
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4
NSI45020AT1G
Comparison of LED Circuit using CCR vs. Resistor Biasing
ON Semiconductor CCR Design
Resistor Biased Design
Constant brightness over full Automotive Supply Voltage
(more efficient), see Figure 9
Large variations in brightness over full Automotive Supply Voltage
Little variation of power in LEDs, see Figure 10
Large variations of current (power) in LEDs
Constant current extends LED strings lifetime, see Figure 9
High Supply Voltage/ Higher Current in LED strings limits lifetime
Current decreases as voltage increases, see Figure 9
Current increases as voltage increases
Current supplied to LED string decreases as temperature
increases (self-limiting), see Figure 2
LED current decreases as temperature increases
No resistors needed
Requires costly inventory
(need for several resistor values to match LED intensity)
Fewer components, less board space required
More components, more board space required
Surface mount component
Through-hole components
30
160
TA = 25°C
140
Pd LEDs (mW)
I (mA)
25 Circuit Current with
CCR Device
20
Circuit Current
with 375 W
15
Representative Test Data
for Figure 7 Circuit, Current
of LEDs, FR−4 @ 300 mm2,
1 oz Copper Area
10
5
9
10
11
TA = 25°C
12
13
14
15
LED Power with
CCR Device
120
100
LED Power
with 375 W
80
Representative Test Data
for Figure 7 Circuit, Pd of
LEDs, FR−4 @ 300 mm2,
1 oz Copper Area
60
40
16
9
10
11
12
13
14
Vin (V)
Vin (V)
Figure 9. Series Circuit Current
Figure 10. LED Power
Current Regulation: Pulse Mode (Ireg(P)) vs DC
Steady-State (Ireg(SS))
15
16
Ireg(SS) for stated board material, size, copper area and
copper thickness. Ireg(P) will always be greater than Ireg(SS)
due to the die temperature rising during Ireg(SS). This heating
effect can be minimized during circuit design with the
correct selection of board material, metal trace size and
weight, for the operating current, voltage, board operating
temperature (TA) and package. (Refer to Thermal
Characteristics table).
There are two methods to measure current regulation:
Pulse mode (Ireg(P)) testing is applicable for factory and
incoming inspection of a CCR where test times are a
minimum. (t < 300 ms). DC Steady-State (Ireg(SS)) testing is
applicable for application verification where the CCR will
be operational for seconds, minutes, or even hours. ON
Semiconductor has correlated the difference in Ireg(P) to
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5
NSI45020AT1G
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE E
D
ÂÂÂÂ
ÂÂÂÂ
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
1
HE
MILLIMETERS
DIM MIN
NOM
MAX
A
0.94
1.17
1.35
A1
0.00
0.05
0.10
b
0.51
0.61
0.71
----c
0.15
D
1.40
1.60
1.80
E
2.54
2.69
2.84
HE
3.56
3.68
3.86
----L
0.25
STYLE 1:
PIN 1. CATHODE
2. ANODE
E
L
2
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
---
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
---
C
b
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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NSI45020A/D