Infineon BFG196 Npn silicon rf transistor Datasheet

BFG196
NPN Silicon RF Transistor
For low noise, low distortion broadband
4
amplifiers in antenna and telecommunication
systems up to 1.5 GHz at collector currents from
20 mA to 80 mA
3
Power amplifier for DECT and PCN Systems
2
fT = 7.5 GHz
1
VPS05163
F = 1.5 dB at 900 GHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFG196
BFG196
Pin Configuration
1=E
2=B
3=E
Package
4=C
SOT223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
12
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
100
Base current
IB
12
Total power dissipation
Ptot
800
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Value
Unit
V
mA
TS 90 °C 1)
Thermal Resistance
Junction - soldering point 2)
RthJS
75
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Jun-27-2001
BFG196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
12
-
-
V
ICES
-
-
100
µA
ICBO
-
-
100
nA
IEBO
-
-
1
µA
hFE
50
100
200
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 50 mA, VCE = 8 V
2
Jun-27-2001
BFG196
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
5
7.5
-
Ccb
-
0.97
1.4
Cce
-
0.4
-
Ceb
-
4
-
AC characteristics (verified by random sampling)
Transition frequency
GHz
IC = 70 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
F
dB
IC = 20 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2.5
-
IC = 50 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
14
-
f = 1.8 GHz
-
8.5
-
-
11.5
-
-
6
-
Power gain, maximum available 1)
Gma
|S21e|2
Transducer gain
IC = 50 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
1G
ma
= |S21 / S12 | (k-(k2-1)1/2 )
3
Jun-27-2001
BFG196
Total power dissipation Ptot = f (TS )
900
mW
P tot
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120 °C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 2
Ptotmax / PtotDC
10 2
RthJS
K/W
10 1
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Jun-27-2001
BFG196
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
f = 1MHz
V CE = Parameter
9
1.9
pF
GHz
10V
1.6
5V
7
3V
6
1.2
5
1.0
4
0.8
1V
3
0.6
0.7V
0.4
2
0.2
1
0.0
0
2V
fT
Ccb
1.4
4
8
12
16
V
0
0
22
20
40
60
80
mA
VCB
IC
Power Gain Gma , Gms = f(IC )
Power Gain Gma, Gms = f(I C)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
15
10
10V
dB
5V
dB
5V
3V
13
3V
2V
8
12
2V
G
G
120
11
10
7
6
1V
9
5
1V
8
4
7
0.7V
3
6
5
0
0.7V
20
40
60
80
mA
2
0
120
IC
20
40
60
80
mA
120
IC
5
Jun-27-2001
BFG196
Power Gain Gma , Gms = f(VCE):_____
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
|S21|2 = f(VCE):---------
VCE = Parameter, f = 900MHz
f = Parameter
16
42
IC=50mA
dBm
0.9GHz
dB
8V
38
36
0.9GHz
5V
12
IP 3
G
34
10
1.8GHz
32
30
8
3V
28
26
1.8GHz
6
24
2V
22
4
20
18
2
1V
16
0
0
2
4
6
V
8
14
0
12
20
40
60
80
VCE
120
IC
Power Gain |S21|2= f(f)
Power Gain Gma , Gms = f(f)
V CE = Parameter
VCE = Parameter
32
dB
mA
30
IC =50mA
IC=50mA
dB
26
24
S21
20
G
22
20
15
18
16
10
14
12
5
10
8
10V
6
1V
4
0.7V
2
0.0
0.5
1.0
1.5
2.0
2.5
GHz
10V
1V
0
0.7V
-5
0.0
3.5
f
0.5
1.0
1.5
2.0
2.5
GHz
3.5
f
6
Jun-27-2001
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