Pan Jit BC807-40 Pnp general purpose transistor Datasheet

BC807 SERIES
PNP GENERAL PURPOSE TRANSISTORS
POWER
45 Volts
VOLTAGE
SOT- 23
225 mWatts
Unit: inch (mm)
FEATURES
• General purpose amplifier applications
.103(2.60)
.056(1.40)
.047(1.20)
• Collector current I C = 500mA
• In compliance with EU RoHS 2002/95/EC directives
.007(.20)MIN
.119(3.00)
.110(2.80)
MECHANICAL DATA
.083(2.10)
.066(1.70)
Case: SOT-23, Plastic
.086(2.20)
• PNP epitaxial silicon, planar design
.006(.15)
.002(.05)
.006(.15)MAX
Device Marking : BC807-16 : 7A
.020(.50)
.013(.35)
.044(1.10)
Approx. Weight: 0.008 gram
.035(0.90)
Terminals: Solderable per MIL-STD-750, Method 2026
BC807-25 : 7B
BC807-40 : 7C
3
COLLECTOR
Top View
3
Collector
1
BASE
1
Base
2
Emitter
2
EMITTER
MAXIMUM RATINGS
PARAMETER
SYMBOL
Value
UNIT
Collector-Emitter Voltage
V C EO
-45
v
Collector-Base Voltage
V C BO
-50
v
Emitter-Base Voltage
V EBO
-5.0
v
IC
-500
mA
Max Power Dissipation (Note 1)
PTOT
225
mW
Junction and Storage Temperature
Range
TJ , TSTG
-55 to 150
oC
Collector Current - Continuous
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Value
UNIT
Thermal Resistance , Junction to Ambient
RθJA
556
oC /W
Note 1 : Transistor mounted on FR-4 board 70x60x1mm.
REV.0.0-FEB.12.2009
PAGE . 1
ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage (Ic=-10mA, IB=0)
V(BR)CEO
-45
-
-
V
Collector-Emitter Breakdown Voltage (VEB=0V, Ic=-100uA
V(BR)CES
-50
-
-
V
Emitter-Base Breakdown Voltage (IE=-10uA,Ic=0)
V(BR)EBO
-5.0
-
-
V
I EBO
-
-
-100
nA
-
-0.1
nA
I C BO
-5.0
uA
100
160
250
-
Emitter-Base Cutoff Current (VEB=-4V)
O
TJ =25 C
Collector-Base Cutoff Current (VCB=-20V,IE=0)
TJ
DC Current Gain
(Ic=-100mA,VCE=-1V)
=150O C
BC807-16
BC807-25
BC807-40
hFE
250
400
600
40
-
-
(Ic=-500mA,VcE=-1V)
-
Collector-Emitter Saturation Voltage (Ic=-500mA ,I B=-50mA)
VCE(SAT)
-
-
-0.7
V
Base-Emitte Voltage (Ic=-500mA,VCE=-1.0V)
VBE(ON)
-
-
-1.2
V
C C BO
-
7.0
-
pF
fT
100
-
-
MHz
Collector-Base Capacitance (VCB=-10v,I E=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=-10mA,VcE=-5V,f=100MHz)
ELECTRICAL CHARACTERISTICS CURVES
1000
1000
TJ = 150°C
TJ = 150°C
100
hFE
hFE
TJ = 25°C
TJ = 25°C
100
TJ = 100°C
TJ = 100°C
V CE = 1V
V CE = 1V
10
0.01
0.1
1
10
100
10
0.01
1000
0.1
Fig. 1.
10
100
1000
Colle ctor Cur r e nt, IC (m A)
Colle ctor Cur r e nt, IC (m A)
Fig. 2.
BC807-16 Typical hFE vs. IC
1000
1
BC807-25 Typical hFE vs. IC
100
TJ = 150°C
CIB (EB)
100
Capacitance, C (pF
hFE
TJ = 25°C
TJ = 100°C
10
COB (EB)
V CE = 1V
10
0.01
0.1
1
10
100
1000
1
0.1
Colle ctor Curre nt, IC (m A)
Fig. 3.
REV.0.0-FEB.12.2009
BC807-40 Typical hFE vs. IC
1
10
100
Reverse Voltage, VR (V)
Fig. 4.
Typical Capacitances
PAGE . 2
MOUNTING PAD LAYOUT
ORDER INFORMATION
• Packing information
T/R - 12K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2009
The information presented in this document is believed to be accurate and reliable. The specifications and information herein
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit
does not convey any license under its patent rights or rights of others.
REV.0.0-FEB.12.2009
PAGE . 3
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