MUR1660 Ultra Fast Recovery Diodes Dimensions TO-220AC A C A C C(TAB) A=Anode, C=Cathode, TAB=Cathode VRSM V 600 MUR1660 Symbol VRRM V 600 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Maximum Ratings Unit IFRMS IFAVM TC=140oC; rectangular, d=0.5 35 16 A IFSM TVJ=45oC; tp=10ms (50Hz), sine 110 A 0.1 mJ 0.1 A EAS IAR o TVJ=25 C; non-repetitive; IAS=1A; L=180uH VA=1.5.VR typ.; f=10kHz; repetitive -55...+175 175 -55...+150 TVJ TVJM Tstg Ptot TC=25oC Md mounting torque Weight P1 o C 95 W 0.4...0.6 Nm 2 g typical ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR1660 Ultra Fast Recovery Diodes Symbol Test Conditions Characteristic Values typ. max. Unit IR TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM 100 0.5 uA mA VF IF=16A; TVJ=150oC TVJ=25oC 1.35 2.04 V RthJC RthCH 0.5 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC trr VR=100V; IF=25A; -diF/dt=100A/us; TVJ=100 C FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour * RoHS compliant P2 K/W 35 o IRM 1.6 APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ns 4.9 ADVANTAGES A * Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com MUR1660 Ultra Fast Recovery Diodes 40 2000 A 30 IF 1500 TVJ= 25°C 20 IRM 1000 10 1 VF 2 IF= 30A IF= 15A IF= 7.5A Fig. 1 Forward current IF versus VF A/us 1000 -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt 2.0 120 trr Kf IRM 0.0 IF= 30A IF= 15A IF= 7.5A 40 400 600 A/us 800 1000 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt 1.6 VFR ıs 1.2 tfr 10 80 120 °C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 0.8 5 70 0 200 400 600 800 1000 A/us -diF/dt Fig. 5 Recovery time trr versus -diF/dt 10 0 0.4 0 200 400 0.0 600 A/us 800 1000 diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 1 ZthJC 1 2 3 Rthi (K/W) ti (s) 0.908 0.35 0.342 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case P3 tfr 90 80 0 200 VFR 15 Qr 0.5 0 TVJ= 100°C V IF = 15A 110 100 1.0 0 20 TVJ= 100°C VR = 300V ns 1.5 IF= 30A IF= 15A IF= 7.5A 10 0 100 V 30 20 500 0 TVJ= 100°C VR = 300V A Qr TVJ=150°C TVJ=100°C 0 40 TVJ= 100°C nC VR = 300V ©2008 SIRECTIFIER Electronics Technology Corp. all rights reserved www.sirectifier.com