Order this document by MJ10023/D SEMICONDUCTOR TECHNICAL DATA $% "! "($ $!&"! $!%%&"$ (& % &&$ #'# " 40 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 400 VOLTS 250 WATTS The MJ10023 Darlington transistor is designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode applications such as: • • • • • AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn–Off Times 150 ns Inductive Fall Time @ 25_C (Typ) 300 ns Inductive Storage Time @ 25_C (Typ) • Operating Temperature Range – 65 to + 200_C • 100_C Performance Specified for: Reversed Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents CASE 197A–05 TO–204AE (TO–3) ≈ 100 ≈ 15 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎ MAXIMUM RATINGS Symbol Max Unit Collector–Emitter Voltage Rating VCEO 400 Vdc Collector–Emitter Voltage VCEV 600 Vdc Emitter Base Voltage VEB 80 Vdc Collector Current — Continuous — Peak (1) IC ICM 40 80 Adc Base Current — Continuous — Peak (1) IB IBM 20 40 Adc Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C PD 250 143 1.43 Watts TJ, Tstg – 65 to + 200 _C Symbol Max Unit RθJC 0.7 _C/W TL 275 _C Operating and Storage Junction Temperature Range W/_C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. Motorola, Inc. 1998 Motorola Bipolar Power Transistor Device Data 1 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ v ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ v MJ10023 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Typ Max 400 — — — — — — 0.25 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) VCEO(sus) Vdc Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150_C) ICEV mAdc Collector Cutoff Current (VCE = Rated VCEV, RBE = 50 Ω, TC = 100_C) ICER — — 5.0 mAdc Emitter Cutoff Current (VEB = 2.0 V, IC = O) IEBO — — 175 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased Clamped Inductive SOA with Base Reverse Biased IS/b See Figure 13 RBSOA See Figure 14 ON CHARACTERISTICS (1) DC Current Gain (IC = 10 Adc, VCE = 5.0 V) hFE 50 — 600 — — — — — — 2.2 5.0 2.5 — — — — 2.5 2.5 Vf — 2.5 5.0 Vdc Cob 150 — 600 pF td — 0.03 0.2 µs Collector–Emitter Saturation Voltage (IC = 20 Adc, IB = 1.0 Adc) (IC = 40 Adc, IB = 5.0 Adc) (IC = 20 Adc, IB = 10 Adc, TC = 100_C) VCE(sat) Base–Emitter Saturation Voltage (IC = 20 Adc, IB = 1.2 Adc) (IC = 20 Adc, IB = 1.2 Adc, TC = 100_C) VBE(sat) Diode Forward Voltage (IF = 20 Adc) — Vdc Vdc DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz) SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time Rise Time Storage Time (VCC = 250 Vdc, 1.0 Adc, Vd IC = 20 A, A IB1 = 1 0 Ad 0V µs VBE(off) = 5 5.0 V, tp = 50 µs, Dutyy Cycle 2.0%)) y Fall Time tr — 0.4 1.2 µs ts — 0.9 2.5 µs tf — 0.3 0.9 µs tsv — 1.9 4.4 µs tc — 0.6 2.0 µs tfi — 0.3 — µs tsv — 1.0 — µs tc — 0.3 — µs tfi — 0.15 — µs Inductive Load, Clamped (Table 1) Storage Time Crossover Time (ICM = 20 A, A VCEM = 250 V, V IB1 = 1 1.0 0A A, VBE(off) = 5 V, TC = 100_C) Fall Time Storage Time Crossover Time (ICM = 20 A, A VCEM = 250 V, V IB1 = 1 1.0 0A A, VBE(off) = 5 V, TC = 25_C) Fall Time (1) Pulse Test: PW = 300 µs, Duty Cycle 2 2%. Motorola Bipolar Power Transistor Device Data MJ10023 VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 300 TJ = 100°C hFE, DC CURRENT GAIN 200 TJ = 25°C 100 50 VCE = 5 V 30 0.4 1.0 10 2.0 5.0 IC, COLLECTOR CURRENT (AMPS) TJ = 100°C 4.5 4.0 3.5 3.0 IC = 40 A 2.5 2.0 IC = 20 A 1.5 IC = 10 A 1.0 0.5 0.01 0.02 40 20 5.0 0.2 0.5 1.0 0.1 IB, BASE CURRENT (AMP) 2.0 5.0 10 Figure 2. Collector Saturation Region 3.0 3.0 2.7 2.7 IC/IB = 10 2.4 VBE(sat), BASE–EMITTER VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 0.05 2.1 1.8 1.5 1.2 VCE @ 25°C 0.9 0.6 IC/IB = 10 2.4 2.1 1.8 VBE @ 25°C 1.5 1.2 VBE @ 100°C 0.9 0.6 VCE @ 100°C 0.3 0.3 0.4 1.0 2.0 5.0 10 20 0.4 40 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector–Emitter Saturation Voltage Figure 4. Base–Emitter Saturation Voltage 104 40 400 103 102 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT ( µA) VCE = 250 V TJ = 125°C 100°C 101 75°C 200 100 100 25°C 10 –1 – 0.2 50 40 0 + 0.2 + 0.4 + 0.6 + 0.8 4.5 10 20 50 100 200 VBE, BASE–EMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Collector Cutoff Region Figure 6. Cob, Output Capacitance Motorola Bipolar Power Transistor Device Data 400 3 MJ10023 Table 1. Test Conditions for Dynamic Performance VCEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INDUCTIVE TEST CIRCUIT TURN–ON TIME 20 Ω 1 INPUT CONDITIONS 1 5V 1 SEE ABOVE FOR DETAILED CONDITIONS IB1 Rcoil 1N4937 OR EQUIVALENT INPUT 2 PW Varied to Attain IC = 100 mA CIRCUIT VALUES 2 TUT 0 Lcoil Vclamp IB1 adjusted to obtain the forced hFE desired VCC TURN–OFF TIME RS = 0.1 Ω 2 Use inductive switching driver as the input to the resistive test circuit. Lcoil = 180 µH Rcoil = 0.05 Ω VCC = 20 V Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Ω Vclamp = VCEO(sus) VCC = 250 V RL = 12.5 Ω Pulse Width = 25 µs ICM tf Clamped t t1 tf t1 t2 VCEM Vclamp t TIME t2 VCEM 90% VCEM RL 1 2 VCC (ICM) [ Lcoil Vclamp Test Equipment Scope — Tektronix 475 or Equivalent tsv Vclamp 90% ICM trv tfi tti tc VCE IB [ TUT Lcoil (ICM) VCC 10 ICM IC RESISTIVE TEST CIRCUIT t1 Adjusted to Obtain IC 10% VCEM 10% ICM 90% IB1 2% IC 9.0 I B2(pk), BASE CURRENT (AMPS) TEST CIRCUITS OUTPUT WAVEFORMS 8.0 7.0 6.0 5.0 4.0 IC = 20 A IB1 = 1 A Vclamp = 250 V TJ = 25°C 3.0 2.0 1.0 TIME 0 Figure 7. Inductive Switching Measurements 1.0 5.0 6.0 7.0 2.0 3.0 4.0 VBE(off), REVERSE BASE VOLTAGE (VOLTS) Figure 8. Typical Peak Reverse Base Current 2.0 ICM = 20 A IB1 = 1 A VCEM = 250 V tsv @ 100°C 1.75 t, TIME ( µs) 1.5 1.25 tc @ 100°C 1.0 tsv @ 25°C 0.75 0.5 tc @ 25°C 0.25 0 0 1.0 5.0 6.0 7.0 2.0 3.0 4.0 VBE(off), BASE–EMITTER VOLTAGE (VOLTS) 8.0 Figure 9. Typical Inductive Switching Times 4 Motorola Bipolar Power Transistor Device Data 8.0 MJ10023 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. tsv = Voltage Storage Time, 90% IB1 to 10% VCEM trv = Voltage Rise Time, 10 – 90% VCEM tfi = Current Fall Time, 90 – 10% ICM tti = Current Tail, 10 – 2% ICM tc = Crossover Time, 10% VCEM to 10% ICM An enlarged portion of the inductive switching waveform is shown in Figure 7 to aid on the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN–222A: PSWT = 1/2 VCCIC(tc)f In general, t rv + t fi t c . However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25_C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user orinented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100_C. ` RESISTIVE SWITCHING 2.0 2.0 VCC = 250 V IC/IB1 = 20 TJ = 25°C 1.0 1.0 ts 0.5 t, TIME ( µs) t, TIME ( µs) 0.5 VCC = 250 V IC/IB1 = 20 VBE(off) = 5 V 0.2 tr 0.1 tf 0.2 0.1 0.05 0.05 td 0.02 0.02 0.4 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) 20 0.4 40 Figure 10. Typical Turn–On Switching Times 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (AMPS) 20 40 Figure 11. Typical Turn–Off Switching Times r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.2 0.1 D = 0.5 0.2 0.1 RθJC(t) = r(t) RθJC RθJC = 0.7°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t) 0.05 SINGLE PULSE 0.01 0.1 1.0 10 100 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 1000 10000 t, TIME (ms) Figure 12. Thermal Response Motorola Bipolar Power Transistor Device Data 5 MJ10023 The Safe Operating Area figures shown in Figures 13 and 14 are specified for these devices under the test conditions shown. SAFE OPERATING AREA INFORMATION FORWARD BIAS IC, COLLECTOR CURRENT (AMPS) 100 50 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on TC = 25_C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 12. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 µs (TURN–ON SWITCHING) 20 10 5.0 dc 2.0 1.0 0.5 TC = 25°C 0.2 0.1 0.05 0.02 0.01 1.0 BONDING WIRE LTD THERMAL LTD SECOND BREAKDOWN LTD 2.0 100 200 400 5.0 10 20 50 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 13. Maximum Forward Bias Safe Operating Area ICM , PEAK COLLECTOR CURRENT (AMPS) REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives the RBSOA characteristics. IC/IB ≥ 20 25°C ≤ TJ ≤ 100°C 80 70 60 TURN–OFF LOAD LINE 50 40 30 20 10 0 2 V ≤ VBE(off) ≤ 8 V RBE = 24 Ω 0 100 200 300 400 500 700 600 VCEM, PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 14. Maximum RBSOA, Reverse Bias Safe Operating Area POWER DERATING FACTOR (%) 100 SECOND BREAKDOWN DERATING 80 60 40 THERMAL DERATING 20 0 0 40 80 120 160 200 TC, CASE TEMPERATURE (°C) Figure 15. Power Derating 6 Motorola Bipolar Power Transistor Device Data MJ10023 PACKAGE DIMENSIONS A N C –T– E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M –Y– L 2 H G B M T Y 1 –Q– 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A–05 TO–204AE (TO–3) ISSUE J Motorola Bipolar Power Transistor Device Data 7 MJ10023 Motorola reserves the right to make changes without further notice to any products herein. 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