BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors NPN Silicon http://onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which is designed for low power surface mount applications. COLLECTOR 3 Features 1 BASE • Pb−Free Packages are Available* 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector−Emitter Voltage VCEO 45 V Collector−Base Voltage VCBO 50 V Emitter−Base Voltage VEBO 6.0 V IC 100 mAdc Collector Current − Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 3 2 1 CASE 463 SC−75/SOT−41 6 STYLE 1 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, FR−4 Board (Note 1) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 1) Total Device Dissipation, FR−4 Board (Note 2) TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol Max Unit 200 mW 1.6 mW/°C 600 °C/W xxM PD RJA xx = Device Code M = Date Code ORDERING INFORMATION PD 300 mW 2.4 mW/°C RJA 400 °C/W TJ, Tstg −55 to +150 °C See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 June, 2004 − Rev. 1 1 Publication Order Number: BC847ATT1/D BC847ATT1, BC847BTT1, BC847CTT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 − − 50 − − 50 − − 6.0 − − − − − − 15 5.0 BC847A BC847B BC847C − − − 90 150 270 − − − BC847A BC847B BC847C 110 200 420 180 290 520 220 450 800 Unit OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mA) BC847 Series Collector −Emitter Breakdown Voltage (IC = 10 A, VEB = 0) BC847 Series Collector −Base Breakdown Voltage (IC = 10 A) BC847 Series Emitter −Base Breakdown Voltage (IE = 1.0 A) BC847 Series V V(BR)CES V V(BR)CBO V V(BR)EBO Collector Cutoff Current (VCB = 30 V) ICBO (VCB = 30 V, TA = 150°C) V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE (IC = 2.0 mA, VCE = 5.0 V) − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 pF − − 10 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) http://onsemi.com 2 NF dB BC847ATT1, BC847BTT1, BC847CTT1 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 2.0 TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 50 70 100 Figure 2. “Saturation” and “On” Voltages θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 1. Normalized DC Current Gain 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 20 1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 0.2 Figure 3. Collector Saturation Region 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 4. Base−Emitter Temperature Coefficient http://onsemi.com 3 BC847ATT1, BC847BTT1, BC847CTT1 r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE BC847 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 t, TIME (s) 10 C, CAPACITANCE (pF) 7.0 TA = 25°C 5.0 Cib 3.0 Cob 2.0 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) 20 40 f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 5. Normalized Thermal Response 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 7. Current−Gain − Bandwidth Product Figure 6. Capacitances http://onsemi.com 4 50 BC847ATT1, BC847BTT1, BC847CTT1 ORDERING INFORMATION Marking Package Shipping† BC847ATT1 1E SC−75/SOT−416 3,000 / Tape & Reel BC847BTT1 1F SC−75/SOT−416 BC847BTT1G 1F SC−75/SOT−416 (Pb−Free) BC847CTT1 1G SC−75/SOT−416 BC847CTT1G 1G SC−75/SOT−416 (Pb−Free) Device 3,000 / Tape & Reel 3,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 BC847ATT1, BC847BTT1, BC847CTT1 PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463−01 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −A− S 2 3 D 3 PL 0.20 (0.008) DIM A B C D G H J K L S G −B− 1 M B K J 0.20 (0.008) A MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC −−− 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC −−− 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC C L H ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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