Order this document by BC212/D SEMICONDUCTOR TECHNICAL DATA PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 212 BC 213 BC 214 Unit Collector – Emitter Voltage VCEO –50 –30 –30 Vdc Collector – Base Voltage VCBO –60 –45 –45 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –100 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 350 2.8 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.0 8.0 Watts mW/°C TJ, Tstg – 55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 357 °C/W Thermal Resistance, Junction to Case RqJC 125 °C/W Rating Operating and Storage Junction Temperature Range 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0) BC212 BC213 BC214 V(BR)CEO –50 –30 –30 — — — — — — Vdc Collector – Base Breakdown Voltage (IC = –10 mA, IE = 0) BC212 BC213 BC214 V(BR)CBO –60 –45 –45 — — — — — — Vdc Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) BC212 BC213 BC214 V(BR)EBO –5 –5 –5 — — — — — — Vdc Collector–Emitter Leakage Current (VCB = –30 V) BC212 BC213 BC214 ICBO — — — — — — –15 –15 –15 nAdc Emitter–Base Leakage Current (VEB = –4.0 V, IC = 0) BC212 BC213 BC214 IEBO — — — — — — –15 –15 –15 nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max BC212 BC213 BC214 40 40 100 — — — — — — (IC = –2.0 mAdc, VCE = –5.0 Vdc) BC212 BC213 BC214 60 80 140 — — — — — 600 (IC = –100 mAdc, VCE = –5.0 Vdc)(1) BC212, BC214 BC213 — — 120 140 — — — — –0.10 –0.25 — –0.6 Unit ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc)(1) VCE(sat) Vdc Base – Emitter Saturation Voltage (IC = –100 mAdc, IB = –5.0 mAdc) VBE(sat) — –1.0 –1.4 Vdc Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) VBE(on) –0.6 –0.62 –0.72 Vdc — — — 280 320 360 — — — — — 6.0 DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz) fT BC212 BC214 BC213 Common–Base Output Capacitance (VCB = –10 Vdc, IC = 0, f = 1.0 MHz) Cob Noise Figure (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ , f = 1.0 kHz) (IC = –0.2 mAdc, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz) NF Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz) MHz dB BC214 — — 2 BC212, BC213 — — 10 60 80 140 200 — — — — — — — 400 hfe BC212 BC213 BC214 BC212B pF — 1. Pulse Test: Tp 300 s, Duty Cycle 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data –1.0 VCE = –10 V TA = 25°C 1.5 –0.9 1.0 0.7 0.5 –0.7 VBE(on) @ VCE = –10 V –0.6 –0.5 –0.4 –0.3 VCE(sat) @ IC/IB = 10 –0.1 0 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain –0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc) –50 –100 Figure 2. “Saturation” and “On” Voltages 10 400 300 Cib 7.0 200 C, CAPACITANCE (pF) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) VBE(sat) @ IC/IB = 10 –0.2 0.3 0.2 –0.2 VCE = –10 V TA = 25°C 150 100 80 60 5.0 TA = 25°C 3.0 Cob 2.0 40 30 20 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 IC, COLLECTOR CURRENT (mAdc) 1.0 –0.4 –0.6 –50 Figure 3. Current–Gain — Bandwidth Product 0.5 0.3 VCE = –10 V f = 1.0 kHz TA = 25°C 0.1 0.05 0.03 0.01 –0.1 –0.2 –0.5 –1.0 –2.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –1.0 –2.0 –4.0 –6.0 –10 VR, REVERSE VOLTAGE (VOLTS) –20 –30 –40 Figure 4. Capacitances r b′, BASE SPREADING RESISTANCE (OHMS) 1.0 hob, OUTPUT ADMITTANCE (OHMS) TA = 25°C –0.8 V, VOLTAGE (VOLTS) hFE, NORMALIZED DC CURRENT GAIN 2.0 –10 Figure 5. Output Admittance Motorola Small–Signal Transistors, FETs and Diodes Device Data 150 140 130 VCE = –10 V f = 1.0 kHz TA = 25°C 120 110 100 –0.1 –0.2 –0.3 –0.5 –1.0 –2.0 –3.0 IC, COLLECTOR CURRENT (mAdc) –5.0 –10 Figure 6. Base Spreading Resistance 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. 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