Seme LAB IRF450 N-channel power mosfet Datasheet

N-CHANNEL
POWER MOSFET
IRF450
•
Hermeticaly Sealed TO-3 Metal Package
•
Simple Drive Requirements
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
VGS
ID
ID
IDM
PD
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current (2)
Total Power Dissipation at
Tc = 25°C
Tc = 100°C
Tc = 25°C
Derate Above 25°C
TJ
Tstg
Junction Temperature Range
Storage Temperature Range
500V
±20V
13A
8A
52A
150W
1.2W/°C
-55 to +150°C
-55 to +150°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
RθJA
Thermal Resistance, Junction To Ambient
Max.
0.83
Units
°C/W
30
INTERNAL PACKAGE INDUCTANCE
Symbols
Parameters
Typ.
LD
Internal Drain Inductance
5
LS
Internal Source Inductance
13
Units
nH
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2)
Repetitive Rating: Pulse Width limited by max. junction temperature.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9118
Issue 1
Page 1 of 3
N-CHANNEL
POWER MOSET
IRF450
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
BVDSS
Drain-Source Breakdown
Voltage
Static Drain-Source
On-State Resistance
VGS = 0
ID = 250 µA
VGS = 10V
ID = 7A
Gate Threshold Voltage
VDS = VGS
ID = 250µA
2
gfs
Forward Transconductance
VDS ≥ 15V
I D = 7A
6
IDSS
Zero Gate Voltage
Drain Current
VDS = 500V
VGS = 0
250
VDS = 400V
TC = 125°C
1000
IGSS
Forward Gate-Source
Leakage
Reverse Gate-Source
Leakage
RDS(on)
VGS(th)
(1)
IGSS
(1)
Min.
Typ.
Max.
500
Units
V
0.4
Ω
4
V
S(Ʊ)
VGS = 20V
100
VGS = -20V
-100
µA
nA
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
VGS = 0
2700
Coss
Output Capacitance
VDS = 25V
600
Crss
Reverse Transfer
Capacitance
f = 1.0MHz
240
Qg
Total Gate Charge
VGS = 10V
82
Qgs
Gate-Source Charge
ID = 16A
40
Qgd
Gate-Drain Charge
VDS = 0.8 BVDSS
42
td(on)
Turn-On Delay Time
VDD = 250V
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
pF
nC
35
190
ID = 12A
ns
170
RG = 2.35Ω
130
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
(1)
ISM
VSD
(1)
Trr
Qrr
(1)
Continuous Source Current
13
Pulse Source Current
52
Diode Forward Voltage
IS = 13A
TJ = 25°C
1.4
VGS = 0
Reverse Recovery Time
IS = 13A
TJ = 150°C
Reverse Recovery Charge
VDD ≤ 50V
di/dt = 100A/µs
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
A
V
1300
ns
7.4
µC
Website: http://www.semelab-tt.com
Document Number 9118
Issue 1
Page 2 of 3
N-CHANNEL
POWER MOSET
IRF450
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1
1.52 (0.06)
3.43 (0.135)
2
22.23
(0.875)
max.
0.97 (0.060)
1.10 (0.043)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
TO3 (TO204-AA)
Pin 1 - Gate
Pin 2 - Source
Case - Drain
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9118
Issue 1
Page 3 of 3
Similar pages