TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 • • • • • • • • • • • Very Low Noise, Very High Sensitivity, Electronically Variable Charge Domain Gain High Resolution, 2/3-in Format, Solid State ChargeCoupled Device (CCD) Frame Transfer Image Sensor for low light level applications with 30Frame/s readout speed. 1,006,008 Pixels per Field Frame Memory 1004 (H) x 1002 (V) Active Pixels in Image Sensing Area Compatible With Electronic Centering Multimode Readout Capability o Progressive Scan o Line Summing o Pixel Summing Serial Register 0-8V Clocking (except CMG gate) Continuous Electronic Exposure Control from 1/30 s to 1/5,000 s 8.0 um Square Pixels Advanced Lateral Overflow Drain Low Dark Current DUAL-IN-LINE PACKAGE (TOP VIEW) P+ 1 28 P- P+ 2 27 P- SUB 3 26 NC ODB 4 25 NC IAG2 5 24 IAG2 IAG1 6 23 IAG1 SAG2 7 22 SAG2 SAG1 8 21 SAG1 SUB 20 FP 9 SRG1 10 19 VCLD SRG2 11 18 VOUT CMG 12 17 VDD RST 13 16 VREFG SUB 14 15 SUB • High Photo response Uniformity Over a Wide Spectral Range • Solid State Reliability With No Image Burn-in, Residual Imaging, Image Distortion, Image Lag, or Microphonics • Package with peltier cooler Description The TC285SPD is a 1004x1002 30-Frame/s readout, frame-transfer CCD image sensor designed for use in black and white, bio-medical, and special-purpose applications requiring high sensitivity, high speed, high resolution, and low noise. The TC285SPD is a new device of the IMPACTRONTM family of very-low noise, high sensitivity, high-speed, and high-resolution image sensors that multiply charge directly in TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 1 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 the charge domain before conversion to voltage. The charge carrier multiplication (CCM) is achieved by using a low-noise single-carrier, impact ionization process that occurs during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed gates activates the CCM. The amount of multiplication gain is adjustable depending on the amplitude of multiplication pulses. The device function resembles the function of an image intensifier implemented in solid state. The image-sensing area of the TC285SPD is configured into 1002 lines with 1004 pixels in each line. 28 pixels are reserved in each line for dark reference. The blooming protection is based on an advanced lateral overflow drain concept that does not reduce NIR response. The sensor can be operated in the progressive scan mode and can capture a full 1,006,008 pixels in one image field. The frame transfer from the image sensing area to the memory area is accomplished at a high rate that minimizes image smear. The electronic exposure control is achieved by clearing the unwanted charge from the image area using a short positive pulse applied to the anti-blooming drain. This marks the beginning of the integration time, which can be arbitrarily shortened from its nominal length. After charge is integrated and stored in the memory it is available for readout in the next cycle. This is accomplished by using a unique serial register design that includes special charge multiplication pixels. The TC285SPD sensor is built using TI-proprietary advanced Split-Gate Virtual-Phase CCD (SGVPCCD) technology, which provides devices with wide spectral response, high quantum efficiency (QE), low dark current, and high response uniformity. This MOS device contains limited built-in ESD protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to Vss. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to Vss during operation to prevent damage to the amplifier. The device can also be damaged if the output and ADB terminals are reverse-biased and excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication “Guidelines for Handling Electrostatic-DischargeSensitive (ESD) Devices and Assemblies” available from Texas Instruments. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 2 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 F u n c tio n a l b lo c k d ia gra m SUB 3 ODB 4 D ark R e fe re n c e P ixe ls IA G 2 5 24 IA G 2 23 IA G 1 Im age S e n sin g A re a w ith B lo o m in g P ro te c tio n IA G 1 6 SAG 2 7 SAG 1 8 SUB 9 22 S A G 2 Im age S to rage A re a 21 SAG 1 20 FP S R G 1 10 S R G 2 11 S e rial R e ad o u t R e giste r 19 V C L D C le arin g D rain C h arge M u ltip lie r C M G 12 18 V out 17 VDD 16 V R E F G R S T 13 15 SUB S U B 14 ** TC285SPD includes an output bipolar transistor in the package. For a proper operation it is necessary to connect a 2.2kOhm-loading resistor externally to the VOUT pin. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 3 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Inside package VDD V out V out 2.2K Ω TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 4 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 S ensor T opology diagram 27 D ark R eference P ixels+1H alf P ixel 1H alf P ixel+3 D ark R eference P ixels 1004 A ctive P ixels 1002 A ctive Lines D ark R eference P ixels 1010 Lines 6 D ark pixels + 2 Invalid P ixels Im age S ensing A rea w ith B loom ing P rotection Im age S torage A rea 10 27 1 1 3 1004 A ctive P ixels H alf P ixels 643 D um m y P ixels 400 M ultiplication 3 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 5 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Terminal functions Terminal name VDD VCLD IAG1 IAG2 ODB OUT SAG1 SAG2 SRG1 SRG2 CMG RST FP VREFG SUB P+ P- No. 17 19 6,23 5,24 4 18 8,21 7,22 10 11 12 13 20 16 3,9,14,15 1,2 27,28 I/O I I I I I O I I I I I I I I - Description Supply voltage for amplifiers Supply voltage for Clearing drain & ESD circuits Image area gate-1 Image area gate-2 Supply voltage for anti-blooming drain Output signal, multiplier channel Storage area gate-1 Storage area gate-2 Serial register gate-1 Serial register gate-2 Charge multiplication gate Reset gate Field plate (See Figure 3) Amplifier reference gate Chip substrate Peltier cooler power supply -positive Peltier cooler power supply -negative Detailed description The TC285SPD consists of five basic functional blocks: The image-sensing area, the image–storage area, the serial register, the charge multiplier, and the charge detection node with buffer amplifier. The location of each of these blocks is identified in the functional block diagram. Image-sensing and storage areas Figure 1 and Figure 2 show the pixel cross-section with potential-well diagram and top views of pixels in the image-sensing and storage areas. As light enters the silicon in the image-sensing area, electrons are generated and collected in potential wells of the pixels. Applying a suitable dc bias to the anti blooming drain provides blooming protection. The electrons that exceed a specific level, determined by the ODB bias, are drained away from the pixels. If it is necessary to remove all previously accumulated charge from the wells a short positive pulse is applied to the drain. This marks the beginning of the new integration period. After the integration cycle is completed, charge is quickly transferred into the memory where it waits for readout. The lines can be read out from the memory in a sequential order to implement progressive scan. 28 columns at the left edge and 4 columns at the right edge of the image-sensing area are shielded from the incident light. These pixels provide the dark reference used in subsequent video-processing circuits to restore the video-black level. Additionally, 6 dark lines, located between the image sensing area and the image-storage area, were added to the array for isolation. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 6 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Advanced lateral overflow drain The advanced lateral overflow drain structure is shared by two neighboring pixels in each line. By varying the DC bias of the anti-blooming drain it is possible to control the blooming protection level and trade it for well capacity. Applying a pulse to the drain, approximately 6V above the nominal level, for a minimum of 100µs(3H), removes all charge from the pixels. This feature permits precise control of the integration time on a frame-by-frame basis. The single-pulse clearing capability also reduces smear by eliminating accumulated charge in pixels before the start of the integration period (single sided smear). Serial register and charge multiplier The serial register of TC285SPD image sensor consists of only poly-silicon gates. It operates at high speed, being clocked from 0V to 8V. This allows the sensor to work at 30 frames/s. The serial register is used for transporting charge stored in the pixels of the memory lines to the output amplifier. The TC285SPD device has a serial register with twice the standard length. The first half has a conventional design that interfaces with the memory as it would in any other CCD sensor. The second half, however, is unique and includes 400 charge multiplication stages with a number of dummy pixels that are needed to transport charge between the active register blocks and the output amplifier. Charge is multiplied as it progresses from stage to stage in the multiplier toward the charge detection node. The charge multiplication level depends on the amplitude of the multiplication pulses (approximately 15V~22V) applied to the multiplication gate. Due to the double length of the register, first 2 lines in each field or frame scan do not contain valid data and should be discarded. Charge detection node and buffer amplifier The last element of the charge detection and readout chain is the charge detection node with the buffer amplifier. The charge detection node is using a standard Floating Diffusion (FD) concept followed by an on-chip dual-stage source-follower buffer. Another bipolar transistor (third stage) has been included in the sensor package to improve the driving capability at high speed. A load for the bipolar transistor (2.2kOhm) needs to be connected externally from the package output pin to SUB. Applying a pulse to the RST pin resets the detection node. Pixel charge summing function can be easily implemented by skipping the RST pulses. To achieve the ultimate sensor performance it is necessary to eliminate kTC noise. This is typically accomplished by using CDS (correlated double sampling) processing techniques. IMPACTRONTM devices have the potential for detecting single electrons (photons) when cooled or when sufficiently short integration times are used. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 7 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Absolute maximum ratings over operating free-air temperature range (unless otherwise noted)* Supply voltage range, Vss: VDD, VCLD (see Note1) ………… 0V to + 15V Supply voltage range, Vss: ODB………………………………… 0V to + 22V Supply voltage range, Vss: FP, VREFG ………………………… 0V to + 8V Input voltage range, Vi: IAG, SAG………. …………………… - 8V to + 8V Input voltage range, Vi: SRG, RST…………………………… 0V to + 10V Input voltage range, Vi: CMG ………………………………… -5V to + 23V Supply voltage range, Vcool: P+ (see Note2)………………….. 0V to + 7V Supply current range, Icool: P+ (see Note2) ……………… 0A to 1.8A Operating free-air temperature range, Ta ……………………… -10°C to 45°C Storage temperature range, Tstg ……………………………… -30°C to 85°C Operating case temperature range …………………..…..….……-10°C to 55°C Dew point of package inside gas (see Note2)……….…..….… Less than -20°C * Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect the device reliability. Note 1: All voltage values are with respect to substrate terminal. Note 2: Peltier cooler generates heat during cooling process. To keep the case temperature range, the heat must be removed through an external heat sink. See Figure 12 for reference of CCD temperature vs Icool. In order to avoid condensation upon the surface do not cool the CCD to less than -20 degrees C. Be careful when attaching external heat sink to package. Fastening it too strongly may crack or puncture the package, making it susceptible to moisture or humidity. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 8 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Recommended operating conditions Description Substrate bias, Vss Supply voltage, Vdd* ODB VDD, VCLD For blooming control For clearing FP VREFG ** High Low High IAG2*** Low High SAG1*** Low High SAG2*** Low High Input voltage, Vi * SRG1 Low High SRG2 Low High CMG**** Low High RST Low IAG1, IAG2, SAG1, SAG2 Clock Frequency, fck SRG1, SRG2, CMG ,RST Load capacitance OUT Inside dew point of a package***** Operating free-air temperature IAG1*** MIN NOM 0 13.5 14.0 4.9 5.2 12.0 12.5 1.5 5.0 5.5 3.2 3.5 -6.0 -5.7 2.9 3.2 -6.0 -5.7 3.2 3.5 -6.0 -5.7 2.9 3.2 -6.0 -5.7 7.5 7.8 0.0 7.5 7.8 0.0 7.0 -4.1 -3.8 5.5 6.0 0.0 1.0 35.0 -10 25 MAX 14.5 5.5 13.0 6.0 3.8 -5.4 3.5 -5.4 3.8 -5.4 3.5 -5.4 8.1 UNIT V V 8.1 22.0 -3.5 6.5 MHz 6.0 -20 45 pF °C °C * Fine-tuning of input voltages may be required to obtain the best charge transfer efficiency. ** For proper operation it is necessary to keep VREFG bias lower than RST High voltage *** Refer to Figure 6 for a description of the waveforms applied to IAG and SAG by typical driver circuits operated at the H and L voltage settings specified in these recommended operating conditions. **** Charge multiplication gain depends on high level of the CMG and temperature. See figure 10. ***** -20 degrees should be the minimum temperature of the cooled CCD. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 9 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Electrical characteristics over recommended operating ranges of supply voltage at operating free-air temperature (unless otherwise noted) PARAMETER Charge multiplication gain** Excess noise factor for typical CCM gain (Note 3) Dynamic range without CCM gain Dynamic range with typical CCM gain (Note 4) Charge conversion gain without CCM gain (Note 5) τ Signal-response delay time (Note6) Output resistance（Note 7） Amp. Noise-equivalent signal without CCM gain * Amp. Noise-equivalent signal with typ. CCM gain * Response linearity with no CCM gain Response linearity with typ. CCM gain Charge-transfer efficiency Parallel transfer (Note 8) Serial transfer Supply current without output bipolar transistor current IAG1 IAG2 IAG1-IAG2 SAG1 SAG2 SAG1-SAG2 SRG1 Ci Input capacitance SRG2 CMG ODB RST FP VREFG MIN 1 1 TYP MAX 200 2000** 1.4 66 72 14 16 320 20 1.0 1 1 0.99994 1.0 0.99994 1.0 2.7 4 12.8 13.5 6.8 13.9 14.5 7.78 86.0 69.0 24.0 3,000 10 127 10 UNIT dB dB uV/e ns Ω e e mA nF pF All typical values are at Ta = 25 °C unless otherwise noted. ** Maximum CCM gain is not guaranteed. * The values in the table are quoted using CDS = Correlated Double Sampling. CDS is a signal processing technique that improves performance by minimizing undesirable effects of reset noise. Notes: 3. Excess Noise Factor “F” is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before multiplication where M is the charge multiplication gain. 4. Dynamic Range is –20 times the logarithm of the noise sigma divided by the saturation–output signal amplitude. 5. Charge conversion factor is defined as the ratio of output signal to input number of electrons. 6. Signal-response delay time is the time between the falling edge of the SRG1 pulse and the output-signal valid state. 7. Since the output bipolar transistor is carried out to the package, output resistance cannot be measured. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 10 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 8. Charge transfer efficiency is one minus the charge loss per transfer in the CCD register. The test is performed in the dark using either electrical or optical input. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 11 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Optical characteristics Ta = 25°C, Integration time = 16.67ms(unless otherwise noted) PARAMETER MIN TYP MAX UNIT No IR filter Sensitivity with typical CCM gain (Note 9) 5600 With IR filter 700 No IR filter 28 With IR filter 3.5 Saturation signal output no CCM gain (Note 10) Saturation signal output Anti blooming Enable no CCM gain(Note 10) Saturation signal output with typ. CCM gain (Note10) Zero input offset output (Note 11) Blooming overload ratio (Note 12) Image area well capacity Smear (Note 13) Dark current (Note 14)* Dark signal (Note 15)* Dark-signal uniformity (Note 16) Dark-signal shading (Note 17) Spurious Dark non-uniformity Illuminated Column uniformity (Note 18) Electronic-shutter capability 600 180 Sensitivity without CCM gain (Note 9) Notes: 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 1100 90 1000:1 40k -44 0.005 0.02 0.005 0.02 0.3 0.2 10.0 -30% 30% 1.5% 1/5000 1/30 V/Lx*s V/Lx*s mV dB nA/cm2 mV mV mV mV s Light source temperature is 2856 °K. The IR filter used is CM500 1mm thick. Saturation is the condition in which further increase in exposure does not lead to further increases in output signal. Zero input offset is the residual output signal measured from the reset level with no input charge present. This level is not caused by the dark current and remains approximately constant independent of temperature. It may vary with the amplitude of SRG1. Blooming is the condition in which charge induced by light in one element spills over to the neighboring elements. Smear is the measure of error signal introduced into the pixels by transferring them through the illuminated region into the memory. The illuminated region is 1/10 of the image area height. The value in the table is obtained for the integration time of 16.66ms and 1.0 MHz vertical clock transfer frequency. Dark current depends on temperature and approximately doubles every 8 Co. Dark current is also multiplied by CCM operation. The value given in the table is with the multiplier turned off and it is a calculated value. Dark signal is actual device output measured in dark. Dark signal uniformity is the sigma of difference of two neighboring pixels taking from all the image area pixels. Dark signal shading is the difference between maximum and minimum of 5 pixel median taken anywhere in the array. Column uniformity is obtain by summing all the lines in the array, finding the maximum of the difference of two neighboring columns anywhere in the array, and dividing the result by number of lines. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 12 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 13 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 8.0 um 8.0 um IAG2 Antiblooming Drain Image Area Pixel IAG1 Channel Stops 7.6 um SAG2 Storage Area Pixel SAG1 8.0 um FIGURE 2. Image Area and Memory Area Pixel Topologies TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 14 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 SRG2 (CMG) FP Polysilicon Gates SRG1 Pixel Cross Section X φ Channel Potential FIGURE 3. Serial Register Pixel Cross Section TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 15 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Image area clear Transfer to memory Integrate ODB 1003 Cycles IAG1 IAG2 SAG1 Max 300us SAG2 1018 Pulses RST SRG1 SRG2 CMG 1046 Pulses line#-1(**) line#1002 line#0(**) IAG1 RST IAG2 SRG1 SRG2 SAG1 CMG SAG2 Expanded section of serial transfer Expanded section of Parallel transfer (**) Lines "-1" and "0" does not contain valid data FIGURE 4. Progressive Scan Timing TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 16 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 10 Dummy signal 1 Half shielded signal 1 Half shielded signal 3 Dark signal 27 Dark signal 1004 Active signal 5 19* 3 * Due to light leakage into the edge pixels of the 27 dark reference pixels it is recommended that these 19 pixels be used for true dark reference. FIGURE 5. Composition of output signal for a line H IAG1,SAG1 L H IAG2,SAG2 L FIGURE 6. An example of parallel transfer waveform by typical driver circuit TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 17 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 For optimum CCM operation, some overlap of CMG HIGH and SRG1 HIGH is necessary. It is recommended to design the timing such that phase can be easily adjusted by at least 5ns. CM G SR G 1 SR G 2 RST V out Reference Level Output Signal(***) SH C lam p (***) Output signal may not go all the way to zero. A zero offset of up to 100 mV may be present. FIGURE 7. Detailed Serial Register Clock Timing for CDS Implementation. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 18 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Vout [mV] Vsat 14*M uV/e Zero Offset Ith Built in Threshold Level Input Light intensity [Lux] FIGURE 8. Photon Transfer Characteristic of CCD Outputs TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 19 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 0.50 0.45 QE=80% QE=60% Responsivity - A/W 0.40 0.35 QE=40% 0.30 0.25 QE=30% 0.20 0.15 0.10 0.05 0.00 400 600 800 Wavelength - nm 1000 FIGURE 9. Typical Spectral Response FIGURE 10. Typical CM gain as function of CMG high voltage 1600 1400 25°C 15°C 0°C -15°C -25°C Absolute Gain 1200 1000 800 600 400 200 0 18.5 19 19.5 20 20.5 CMG Hi[V] TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 20 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 30 Ambience : 22°C foeced air flow CCD drive : on Temperature of CCD(℃) 20 10 0 -10 -20 -30 0 200 400 600 800 1000 1200 Peltier cooler current [mA] FIGURE 12. Typical cooling capability 60.0 Please observe the absolute minimum temperature of the CCD, -20 °C. Temperature of CCD(℃) 40.0 Peltier off 20.0 Peltier current0.28A 0.0 -20.0 Dew point -40.0 Peltier current1.5A -60.0 -20 -10 0 10 20 30 40 50 Open air temperature(℃) FIGURE 13. TC285-B0 Typical cooling characteristic TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 21 TC285SPD-B0 CCD IMAGE SENSOR TM 1004 x 1002 PIXEL IMPACTRON SOCS093 – JANUARY 2006 A heat dissipation board was attached to the back of the CCD package for measurement purposes. Vcc -Viag2 +Viag2 -Viag1 +Viag1 -Vsag2 +Vsag2 -Vsag1 +Vsag1 1 Vcc Vcc + 0.1 Oscillator 10k IAG1 IAG2 SAG1 SAG2 33 2 SAG2 3 -Vsag1 4 SRG1 SRG2 RSG CMG CLK VS+ VH OE OUT IN VL GND VS- 8 +Vsag2 7 SAG2_O 6 -Vsag2 5 0.1 EL7156CS 0.1 1 10k 2 SAG1 3 -Vsag2 4 VS+ VH OE OUT IN VL GND 8 +Vsag1 7 SAG1_O 6 -Vsag1 5 VS- 0.1 EL7156CS 0.1 0.1 0.1 ODB1 ODB2 GND CLMP S/H SYNC LCLMP CLEAR 1 10k Us e r De fine d Tim e r VS+ 2 IAG2 3 -Viag2 4 VH OE OUT IN VL GND VS- 8 +Viag2 7 IAG2_O 6 -Viag2 5 0.1 EL7156CS 0.1 1 10k 2 IAG1 3 -Viag1 4 VS+ VH OE OUT IN VL GND 8 +Viag1 7 IAG1_O 6 -Viag1 5 VS- 0.1 EL7156CS 0.1 FP 0.1 0.1 Vcld VDD VREFG ODB_O Curre nt Buffe r Circuit Block IAG2_O IAG1_O SAG2_O SAG1_O 0.01 IAG2 IAG2_OUT IAG1 IAG1_OUT SAG2 SAG2_OUT SAG1 SAG1_OUT SRG1_O SRG2_O CMG_O RSG_O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 SRG2 NC NC NC NC IAG2 IAG1 SAG2 SAG1 FP VCLD VOUT VDD VREFG SUB 28 27 26 25 24 23 22 21 20 19 18 17 16 15 TC285SPD +Vrsg -Vrsg RSG NC NC SUB ODB IAG2 IAG1 SAG2 SAG1 SUB SRG1 SRG2 CMG RST SUB IAG2_O IAG1_O SAG2_O SAG1_O OUT 2.2k 0.1 0.1 0.1 0.1 +Vsrg2 -Vsrg2 GND SRG2out RSG_O RSG Drive r Vcmdh Vcmdl Vodb ODB1 ODB2 ODB1 Vodb CMG CMG ODB2 GND SRG1 Vcmgh +Vsrg1 -Vsrg1 SRG1 Vcmgl ODBout ODB Drive r ODB_O GND CMGout CM G Drive r SRG2 +Vsrg1 +Vsrg2 -Vsrg2 SRG2 -Vsrg1 CMG_O GND SRG1out +Vsrg2 -Vsrg2 SRG1_O SRG1 Drive r GND SRG2out SRG2_O SRG2 Drive r Notes: A. All values are in Ohms and Microfarads unless otherwise noted. B. TI recommends AC coupled system for coupling to the next video processing circuits. C. Damping resister on each driver lines are defined by the condition of user designed board (1.0 ~ 10 ohm recommended). D. Please shift the GND levels of IAG and SAG at the output of "User Defined Timer" from GND to their appropriate -V as specified in the data sheet before inputting those signals into the EL7156CS driver ICs. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 22 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 FIGURE 15. Typical Application Circuit Diagram Vcmgh + 100 0.1 2200p 1SS226 10k 1SS193 Vcc (~ 5.5V) CMG TP2104N3 10 CMG_O Keep short 10 3.3 1.0 2.7k 10 1.0 Keep short 10 15 TN2106N3 LINE DRIVER (ex.74AC244) 1SS193 + 100 0.1 2200p 10k 1SS226 Vcmgl CMG Driver Circuit +Vsrg,rsg + 100 0.1 2200p 1SS226 10k 1SS193 Vcc (~ 5.5V) SRG,RSG TP2104N3 10 SRG_O,RSG_O Keep short 10 3.3 0.1 2.7k 10 0.1 Keep short 10 3.3 TN2106N3 LINE DRIVER (ex.74AC244) 1SS193 + 100 0.1 2200p 10k 1SS226 -Vsrg,rsg SRG,RSG Driver Circuit Notes: A. All values are in Ohms and Microfarads unless otherwise noted. B. These circuits are implemented on TI's EVM285SPD with negative-swing. C. In these circuits, line driver IC before AC couple should drive over 5.5V swing because of certain switching for discrete MOS-FETs (TP2104,TN2106). D. In these circuits, pre-driver line distance from line driver IC output to AC couple input should keep as short as it can. E. The EL7156CS (Intersil/Elantec) driver is an acceptable alternative to the discreet SRG circuit shown. FIGURE 16. Typical CMG and SRG Driver Circuits TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 23 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 24 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Vdd = 15V 3.3k 0.1 1.0k VR 2.0k Q1 ODBout 10 1.5k ODB1 1.5k 5.6k Q2 3.3k Q3 3.3k ODB2 3.3k ODB Driver Circuit +12V + 0.1 100uF/16V 2SC3671B 2SC3671B 10 4.7 0.1 10 4.7 IAG1_IN IAG1_OUT (To the device input pin) 4.7 4.7 10 10 2SA1431Y 2SA1431Y -12V + 100uF/16V Current Bufferr Circuit (For IAG1, same as the other gate) Notes: A. All values are in Ohms and Microfarads unless otherwise noted. FIGURE 17. Typical ODB Driver and Parallel Current Buffer Circuit TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 25 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 Mechanical data The package for the TC285SPD consists of a ceramic base, a glass window, and a 28-pin lead frame. The glass window is hermetically sealed to the package. The package leads are configured in a dual-in-line arrangement and fit into mounting holes with 1,78 mm center-to-center spacing. The TC285SPD sensor also contains a bipolar transistor inside the package. The transistor load (2.2kOhm) needs to be connected to the VOUT pin externally. TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 26 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 TEXAS INSTRUMENTS POST OFFICE BOX 655303 * DALLAS TEXAS 75265 27 TM 1004 x 1002 PIXEL IMPACTRON TC285SPD-B0 CCD IMAGE SENSOR SOCS093 – JANUARY 2006 IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. 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