Fairchild FGS15N40L Electrical characteristics of igbt Datasheet

IGBT
FGS15N40L
General Description
Features
Insulated Gate Bipolar Transistors(IGBTs) with trench
gate structure have superior performance in conductance
and switching to planar gate structure and also have wide
noise immunity. These devices are well suitable for
strobe application
• High Input Impedance
• High Peak Current Capability (130A)
• Easy Gate Drive
Application
• Strobe Flash
C
C
C
C
C
E
E
G
E
G
8-SOP
Absolute Maximum Ratings
Symbol
VCES
VGES
ICM (1)
PC
TJ
Tstg
TL
E
TC = 25°C unless otherrwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
PurPoses from case for 5 secnds
@ Ta = 25°C
FGS15N40L
400
±6
130
2.0
-40 to +150
-40 to +150
Units
V
V
A
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJA
Parameter
Thermal Resistance, Junction-to-Ambient(PCB Mount)
Typ.
--
Max.
62.5
Units
°C/W
Notes: Mounted on 1” square PCB(FR4 or G-10 Material)
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
September 2001
Symbol
Parameter
C
= 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
450
---
----
-10
± 0.1
V
µA
µA
IC = 0V, IC = 1mA
IC = 130A , VGE = 4.0V
2.0
4.5
1.4
8.0
V
V
VGE = 0V , VCE = 30V
f = 1MHz
----
3800
45
30
----
pF
pF
pF
VCC = 300V , IC = 130A
VGE = 4.0V , RG = 15Ω *
Resistive Load
-----
0.15
1.5
0.15
1.5
--0.3
3.0
us
us
us
us
Off Characteristics
BVCES
ICES
IGES
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
G-E leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E threshold Voltage
C-E Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes : Recommendation of Rg Value : Rg ≥ 15Ω
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Electrical Characteristics of IGBT T
Collector-Emitter Voltage, Vce[v]
4V
Collector Current, I C [A]
120
VGE = 3V
90
60
30
0
0
Common Emitter
VGE=4.0V
5V
150
2
4
6
6
Ic=130A
5
4
Ic=100A
3
Ic=70A
2
8
-50
0
Collector-Emitter Voltage, VCE [V]
8
Collector-Emitter Voltage, V CE [V]
Collector-Emitter Voltage, VCE [V]
10
6
130A
100A
IC=70A
2
0
Common Emitter
TC=25℃
8
6
130A
4
100A
IC=70A
2
1
2
3
4
5
6
0
Gate-Emitter Voltage ,VGE [V]
1
2
3
4
5
6
Gate-Emitter Voltage ,VGE [V]
Fig 3. Saturation Voltage vs. VGE
Fig 4. Saturation Voltage vs. VGE
10000
Common Emitter
TC=150℃
Cies
8
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
150
0
0
10
100
Fig 2. Saturation Voltage vs. Case Temerature
at Variant Current Level
Common Emitter
T C=-40℃
4
50
Case Temperature,TC [℃]
Fig 1. Typical Output Chacracteristics
10
FGS15N40L
7
6V
Commom Emitter
TC = 25℃
180
6
130A
4
100A
1000
Common Emitter
VGE=0V f=1MHz T C=25℃
100
Coes
IC=70A
2
Cres
10
0
0
1
2
3
4
Gate-Emitter Voltage ,V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2001 Fairchild Semiconductor Corporation
5
6
0
10
20
30
40
Collector-Emitter Voltage,VCE [V]
Fig 6. Capacitance Characteristics
FGS15N40L Rev. A1
FGS15N40L
200
Collector Peak Current, I CP [A]
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
Gate-Emitter Voltage,VGE [V]
Fig 7. Collector Current Limit Vs
Gate - Emitter Voltage Limit
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
FGS15N40L
Package Dimension
8-SOP
MIN
#5
1.80
MAX
0.071
3.95 ±0.20
0.156 ±0.008
5.72
0.225
0~
8°
+0.10
0.15 -0.05
+0.004
0.006 -0.002
MAX0.10
MAX0.004
6.00 ±0.30
0.236 ±0.012
0.41 ±0.10
0.016 ±0.004
#4
1.27
0.050
#8
5.13
MAX
0.202
#1
4.92 ±0.20
0.194 ±0.008
(
0.56
)
0.022
1.55 ±0.20
0.061 ±0.008
0.1~0.25
0.004~0.001
0.50 ±0.20
0.020 ±0.008
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
FGS15N40L Rev. A1
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
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The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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