MCR12D, MCR12M, MCR12N Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave silicon gate–controlled devices are needed. • Blocking Voltage to 800 Volts • On–State Current Rating of 12 Amperes RMS at 80°C • High Surge Current Capability — 100 Amperes • Rugged, Economical TO220AB Package • Glass Passivated Junctions for Reliability and Uniformity • Minimum and Maximum Values of IGT, VGT an IH Specified for Ease of Design • High Immunity to dv/dt — 100 V/µsec Minimum at 125°C • Device Marking: Logo, Device Type, e.g., MCR12D, Date Code http://onsemi.com SCRs 12 AMPERES RMS 400 thru 800 VOLTS G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR12D MCR12M MCR12N VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 80°C) IT(RMS) 12 ITSM 100 A I2t 41 A2sec Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Forward Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Forward Average Gate Power (t = 8.3 ms, TC = 80°C) Forward Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Volts 400 600 800 1 December, 1999 – Rev. 2 2 3 A PGM 5.0 Watts PG(AV) 0.5 Watts IGM 2.0 A TJ – 40 to +125 °C Tstg – 40 to +150 °C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Semiconductor Components Industries, LLC, 1999 4 Unit 1 TO–220AB CASE 221A STYLE 3 PIN ASSIGNMENT 1 Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping MCR12D TO220AB 50 Units/Rail MCR12M TO220AB 50 Units/Rail MCR12N TO220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MCR12/D MCR12D, MCR12M, MCR12N THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds Symbol Value Unit RθJC RθJA 2.2 62.5 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max — — — — 0.01 2.0 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VD = Rated VDRM and VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak Forward On–State Voltage* (ITM = 24 A) VTM — — 2.2 Volts Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 Ω) IGT 2.0 8.0 20 mA IH 4.0 20 40 mA Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA) Latch Current (VD = 12 V, IG = 20 mA) IL 6.0 25 60 mA VGT 0.5 0.65 1.0 Volts Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 100 250 — V/µs Repetitive Critical Rate of Rise of On–State Current IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 50 mA di/dt — — 50 A/µs Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 Ω) DYNAMIC CHARACTERISTICS *Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%. http://onsemi.com 2 MCR12D, MCR12M, MCR12N Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM IDRM Peak Repetitive Off State Forward Voltage Anode + VTM on state Peak Forward Blocking Current VRRM IRRM Peak Repetitive Off State Reverse Voltage VTM IH Peak On State Voltage IH IRRM at VRRM Peak Reverse Blocking Current Holding Current + Voltage IDRM at VDRM Forward Blocking Region (off state) Reverse Blocking Region (off state) Reverse Avalanche Region Anode – P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , CASE TEMPERATURE (° C) 125 120 115 110 105 dc 100 95 30° 90° 60° 180° 90 1 2 3 4 5 6 7 8 9 10 11 18 180° 16 14 dc 90° 12 10 30° 8 6 4 2 0 0 12 1 2 3 4 5 6 7 8 9 10 11 12 IT(RMS), RMS ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 1. Typical RMS Current Derating Figure 2. On–State Power Dissipation 100 20 MAXIMUM @ TJ = 25°C 18 GATE TRIGGER CURRENT (mA) I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) 0 20 MAXIMUM @ TJ = 125°C 10 1 16 14 12 10 8 6 4 2 0.1 0.5 1.0 1.5 2.0 0 –40 –25 –10 3.0 2.5 5 20 35 50 65 80 95 110 125 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 3. Typical On–State Characteristics Figure 4. Typical Gate Trigger Current versus Junction Temperature http://onsemi.com 3 MCR12D, MCR12M, MCR12N 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 10 1 –40 –25 –10 5 20 35 50 65 80 95 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 –40 –25 –10 110 125 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Holding Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 100 IL , LATCHING CURRENT (mA) IH, HOLDING CURRENT (mA) 100 10 1 –40 –25 –10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Latching Current versus Junction Temperature http://onsemi.com 4 MCR12D, MCR12M, MCR12N PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE Z SEATING PLANE –T– C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 3: PIN 1. 2. 3. 4. http://onsemi.com 5 CATHODE ANODE GATE ANODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MCR12D, MCR12M, MCR12N Notes http://onsemi.com 6 MCR12D, MCR12M, MCR12N Notes http://onsemi.com 7 MCR12D, MCR12M, MCR12N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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