Filtronic FPD200 General purpose phemt Datasheet

FPD200
GENERAL PURPOSE PHEMT
•
•
DRAIN
BOND
PAD (1X)
FEATURES
♦ 19 dBm Linear Output Power at 12 GHz
♦ 12 dB Power Gain at 12 GHz
♦ 17 dB Maximum Stable Gain at 12 GHz
♦ 12 dB Maximum Stable Gain at 18 GHz
♦ 45% Power-Added Efficiency
SOURCE
BOND
PAD (2x)
GATE
BOND
PAD (1X)
DIE SIZE (µm): 400 x 400
DIE THICKNESS: 75 µm
BONDING PADS (µm): >80 x 80
DESCRIPTION AND APPLICATIONS
The FPD200is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT),
featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high-resolution stepper-based
photolithography. The recessed and offset Gate structure minimizes parasitics to optimize
performance. The epitaxial structure and processing have been optimized for reliable mediumpower applications. The FPD200 also features Si3N4 passivation and is available in a low cost
plastic package.
Typical applications include commercial and other narrowband and broadband high-performance
amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output
amplifiers, and medium-haul digital radio transmitters.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
RF SPECIFICATIONS MEASURED AT f = 12 GHz USING CW SIGNAL
Power at 1dB Gain Compression
P1dB
VDS = 5 V; IDS = 50% IDSS
18
19
dBm
Power Gain at P1dB
G1dB
VDS = 5 V; IDS = 50% IDSS
10.5
12.0
dB
Power-Added Efficiency
PAE
VDS = 5V; IDS = 50% IDSS;
POUT = P1dB
45
%
Maximum Stable Gain (S21/S12)
SSG
dB
VDS = 5 V; IDS = 50% IDSS
f = 12 GHz
f = 24 GHz
16
17
10.5
12
45
60
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
120
mA
Transconductance
GM
VDS = 1.3 V; VGS = 0 V
80
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
1
10
µA
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.2 mA
0.7
1.0
1.3
V
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.2 mA
12.0
14.0
V
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.2 mA
14.5
16.0
V
Thermal Resistivity (see Notes)
θJC
VDS > 3V
280
°C/W
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
75
mA
Revised: 11/17/04
Email: [email protected]
FPD200
GENERAL PURPOSE PHEMT
•
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Max
Units
-3V < VGS < +0V
8
V
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward or reverse current
10
mA
RF Input Power
2
Min
PIN
Under any acceptable bias state
100
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
0.5
W
Comp.
Under any bias conditions
5
dB
2 or more Max. Limits
80
%
Gain Compression
3
Simultaneous Combination of Limits
1
TAmbient = 22°C unless otherwise noted
-40
2
Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3
Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
• Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
• Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• Absolute Maximum Power Dissipation to be de-rated as follows above 22°C:
PTOT= 500mW – (3.6mW/°C) x THS
where THS = heatsink or ambient temperature.
Example: For a 85°C heatsink temperature: PTOT = 0.5W – (0.0036 x (85 – 22)) = 0.27W
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260°C.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
All information and specifications are subject to change without notice.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/17/04
Email: [email protected]
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