ON BC489 High current transistors(npn silicon) Datasheet

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by BC489/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
80
Vdc
Collector – Base Voltage
VCBO
80
Vdc
Emitter – Base Voltage
2
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
VEBO
5.0
Vdc
Collector Current — Continuous
IC
0.5
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Operating and Storage Junction
Temperature Range
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
V(BR)CEO
80
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
80
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
—
Vdc
ICBO
—
—
100
nAdc
40
60
100
160
15
—
—
160
260
—
—
400
250
400
—
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain
(IC = 10 mAdc, VCE = 2.0 Vdc)
(IC = 100 mAdc, VCE = 2.0 Vdc)
hFE
BC489
BC489A
BC489B
(IC = 1.0 Adc, VCE = 5.0 Vdc)*
—
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
BC489,A,B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
—
—
0.2
0.3
0.5
—
—
—
0.85
0.9
1.2
—
fT
—
200
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
7.0
—
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
—
50
—
pF
ON CHARACTERISTICS* (Continued)
Collector – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 100 mAdc)(1)
VBE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
TURN–ON TIME
100
+10 V
RB
Vin
0
tr = 3.0 ns
5.0 µF
+VBB
VCC
+40 V
–1.0 V
5.0 µs
TURN–OFF TIME
100
VCC
+40 V
100
RL
OUTPUT
RB
Vin
5.0 µF
*CS < 6.0 pF
100
RL
OUTPUT
*CS < 6.0 pF
5.0 µs
tr = 3.0 ns
* Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
300
80
VCE = 2.0 V
TJ = 25°C
200
TJ = 25°C
60
40
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
BC489,A,B
100
70
50
Cibo
20
10
8.0
6.0
30
2.0
3.0
5.0 7.0 10
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
4.0
0.1
200
Cobo
0.2
0.5 1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current–Gain — Bandwidth Product
50
100
Figure 3. Capacitance
1.0 k
700
500
ts
300
t, TIME (ns)
200
100
70
50
30
20
tf
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
5.0 7.0
10
tr
td @ VBE(off) = 0.5 V
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P(pk)
t1
0.02
0.1
0.07
0.05
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–469)
TJ(pk) – TC = P(pk) ZθJC(t)
TJ(pk) – TA = P(pk) ZθJA(t)
0.01
SINGLE PULSE
0.03
SINGLE PULSE
ZθJC(t) = r(t) • RθJC
ZθJA(t) = r(t) • RθJA
0.02
0.01
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
100 k
Figure 5. Thermal Response
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
IC, COLLECTOR CURRENT (mA)
BC489,A,B
1.0 k
700
500
100 µs
1.0 ms
1.0 s
300
200
TC = 25°C
TA = 25°C
100
70
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
20
BC489
10
1.0
20 30
50
2.0 3.0
5.0 7.0 10
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70
100
Figure 6. Active Region — Safe Operating Area
400
hFE , DC CURRENT GAIN
TJ =125°C
VCE = 1.0 V
200
25°C
–55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
1.0
TJ = 25°C
V, VOLTAGE (VOLTS)
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5
1.0
2.0
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
4
200
500
1.0
TJ = 25°C
0.8
0.6
50
IC = 10 mA
mA
100 mA
250 mA
500 mA
0.4
0.2
0
0.05
0.1
0.2
0.5
2.0
5.0
1.0
10
IC, COLLECTOR CURRENT (mA)
20
50
Figure 9. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–0.8
–1.0
–1.2
–0.8
TJ = 25°C
V, VOLTAGE (VOLTS)
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
BC489,A,B
–1.6
RθVB for VBE
–2.0
VBE(sat) @ IC/IB = 10
–0.6
VBE(on) @ VCE = –1.0 V
–0.4
–0.2
–2.4
VCE(sat) @ IC/IB = 10
–2.8
0.5
1.0
2.0
5.0
20
50
10
100
IC, COLLECTOR CURRENT (mA)
200
0
–0.5
500
–1.0
–2.0
–1.0
TJ = 25°C
–0.8
–0.6
–0.4
IC = –10 mA
–50 mA –100 mA
–250 mA –500 mA
–0.2
0
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
IB, BASE CURRENT (mA)
–10
–20
–500
Figure 11. “On” Voltages
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 10. Base–Emitter Temperature Coefficient
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mA)
–50
Figure 12. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
–0.8
–1.2
–1.6
RθVB for VBE
–2.0
–2.4
–2.8
–0.5
–1.0
–2.0
–5.0 –10 –20
–50 –100 –200
IC, COLLECTOR CURRENT (mA)
–500
Figure 13. Base–Emitter Temperature Coefficient
5
BC489,A,B
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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6
◊
*BC489/D*
BC489/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
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