ON Semiconductor 2N4918 thru 2N4920 * Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device 3 AMPERE GENERAL–PURPOSE POWER TRANSISTORS 40–80 VOLTS 30 WATTS • Low Saturation Voltage — • • • • VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation Due to Thermopad Construction — PD = 30 W @ TC = 25C Excellent Safe Operating Area Gain Specified to IC = 1.0 Amp Complement to NPN 2N4921, 2N4922, 2N4923 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ Î ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ *MAXIMUM RATINGS Ratings Symbol 2N4918 2N4919 2N4920 Unit VCEO 40 60 80 Vdc Collector–Base Voltage VCB 40 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current — Continuous (1) IC* 1.0 3.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25°C Derate above 25C PD 30 0.24 Watts W/C TJ, Tstg –65 to +150 C Collector–Emitter Voltage Operating & Storage Junction Temperature Range 3 2 1 STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS (2) Characteristic Symbol Max Unit θJC 4.16 C/W *Indicates JEDEC Registered Data for 2N4918 Series. (1) The 1.0 Amp maximum IC value is based upon JEDEC current gain requirements. The 3.0 Amp maximum value is based upon actual current–handling capability of the device (See Figure 5). (2) Recommend use of thermal compound for lowest thermal resistance. Thermal Resistance, Junction to Case Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2002 April, 2002 – Rev. 10 1 Publication Order Number: 2N4918/D 2N4918 thru 2N4920 PD, POWER DISSIPATION (WATTS) 40 30 20 10 0 25 50 75 100 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 125 150 2N4918 thru 2N4920 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 40 60 80 — — — — — — 0.5 0.5 0.5 — — 0.1 0.5 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N4918 2N4919 2N4920 Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) (VCE = 40 Vdc, IB = 0) Vdc ICEO 2N4918 2N4919 2N4920 mAdc Collector Cutoff Current (VCE = Rated VCEO, VBE(off) = 1.5 Vdc) (VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 125C ICEX mAdc Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO — 0.1 mAdc Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO — 1.0 mAdc 40 30 10 — 150 — ON CHARACTERISTICS DC Current Gain (1) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE — Collector–Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) VCE(sat) — 0.6 Vdc Base–Emitter Saturation Voltage (1) (IC = 1.0 Adc, IB = 0.1 Adc) VBE(sat) — 1.3 Vdc Base–Emitter On Voltage (1) (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) — 1.3 Vdc fT 3.0 — MHz Cob — 100 pF hfe 25 — — SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Small–Signal Current Gain (IC = 250 mAdc, VCE = 10 Vdc, f = 1.0 kHz) *Indicates JEDEC Registered Data. (1) Pulse Test: PW 300 µs, Duty Cycle 2.0% VBE(off) 0 Vin VCC Vin t1 RB 2.0 t2 Vin APPROX -11 V 0 t3 TURN-OFF PULSE t1 < 15 ns 100 < t2 < 500 µs t3 < 15 ns DUTY CYCLE ≈ 2.0% IC/IB = 10, UNLESS NOTED TJ = 25°C TJ = 150°C SCOPE Cjd<<Ceb APPROX 9.0 V VCC = 30 V IC/IB = 20 3.0 RC t, TIME (s) µ APPROX -11 V 5.0 +4.0 V RB and RC varied to obtain desired current levels 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V td VCC = 30 V VBE(off) = 0 20 30 10 Figure 2. Switching Time Equivalent Test Circuit tr VCC = 60 V VBE(off) = 2.0 V 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 3. Turn–On Time http://onsemi.com 3 VCC = 60 V 500 700 1000 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N4918 thru 2N4920 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 P(pk) θJC(t) = r(t) θJC θJC = 4.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.07 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 TJ = 150°C 2.0 100 µs 1.0 ms 5.0 ms 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – V CE operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. dc 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25°C 0.5 PULSE CURVES APPLY BELOW RATED VCEO 0.2 0.1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 5. Active–Region Safe Operating Area 5.0 5.0 IC/IB = 20 IC/IB = 20 2.0 1.0 IC/IB = 10 0.7 0.5 0.3 0.2 0.1 0.07 0.05 3.0 t f , FALL TIME (s) µ t s′, STORAGE TIME (s) µ 3.0 2.0 ts′ = ts - 1/8 tf TJ = 25°C TJ = 150°C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 1.0 0.7 0.5 500 700 1000 IC/IB = 10 0.3 0.2 0.1 0.07 0.05 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 7. Fall Time Figure 6. Storage Time http://onsemi.com 4 TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2 500 700 1000 2N4918 thru 2N4920 1000 700 500 VCE = 1.0 V TJ = 150°C 300 hFE, DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL DC CHARACTERISTICS 200 25°C 100 70 50 -55°C 30 20 10 2.0 3.0 5.0 10 20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA) 1000 2000 1.0 IC = 0.1 A 0.8 108 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA) 50 100 200 1.5 VCE = 30 V IC = 10 ICES 107 1.2 106 VOLTAGE (VOLTS) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 1.0 A Figure 9. Collector Saturation Region IC ≈ ICES 105 IC = 2x ICES ICES VALUES OBTAINED FROM FIGURE 13 104 0 30 60 TJ = 25°C 0.9 0.6 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.3 90 120 0 2.0 3.0 5.0 150 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA) Figure 10. Effects of Base–Emitter Resistance Figure 11. “On” Voltage 102 +2.5 TEMPERATURE COEFFICIENTS (mV/ °C) IC, COLLECTOR CURRENT (A) µ 0.5 A 0.6 Figure 8. Current Gain 103 0.25 A 101 TJ = 150°C 100 10-1 100°C 10-2 IC = ICES 104 REVERSE 103 -0.2 -0.1 25°C FORWARD 0 +0.1 +0.2 VCE = 30 V +0.3 +0.4 +2.0 *APPLIES FOR IC/IB < +1.5 +1.0 TJ = 100°C to 150°C +0.5 *θVC FOR VCE(sat) 0 TJ = -55°C to +100°C -0.5 -1.0 -1.5 θVB FOR VBE -2.0 -2.5 2.0 3.0 5.0 +0.5 hFE@VCE 1.0V 2 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 12. Collector Cut–Off Region Figure 13. Temperature Coefficients http://onsemi.com 5 2N4918 thru 2N4920 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE http://onsemi.com 6 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- 2N4918 thru 2N4920 Notes http://onsemi.com 7 2N4918 thru 2N4920 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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