SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L Excellent hFE Linearity. 1 ) UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA PC * 350 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 P P J RATING K SYMBOL N CHARACTERISTIC C MAXIMUM RATING (Ta=25 3 G H A 2 D Complementary to KTC9013S. DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ) Marking h FE Rank BB Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A 96 - 246 - -0.1 -0.25 V -0.8 -1.0 V 150 - - MHz - 7.0 - pF hFE (Note) DC Current Gain VCE=-1V, IC=-50mA VCE(sat) IC=-100mA, IB=-10mA Base-Emitter Voltage VBE IC=-100mA, VCE=-1V Transition Frequency fT Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 2002. 9. 3 F:96 135, VCE=-6V, IC=-20mA, f=100MHz G:118 166, Revision No : 0 VCB=-6V, IE=0, f=1MHz H:144 202, I:176 246 1/1