ONSEMI MC74VHC32DT

SEMICONDUCTOR TECHNICAL DATA
The MC74VHC32 is an advanced high speed CMOS 2–input OR gate
fabricated with silicon gate CMOS technology. It achieves high speed
operation similar to equivalent Bipolar Schottky TTL while maintaining
CMOS low power dissipation.
The internal circuit is composed of three stages, including a buffer output
which provides high noise immunity and stable output. The inputs tolerate
voltages up to 7V, allowing the interface of 5V systems to 3V systems.
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D SUFFIX
14–LEAD SOIC PACKAGE
CASE 751A–03
High Speed: tPD = 3.8ns (Typ) at VCC = 5V
Low Power Dissipation: ICC = 2µA (Max) at TA = 25°C
High Noise Immunity: VNIH = VNIL = 28% VCC
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Designed for 2V to 5.5V Operating Range
Low Noise: VOLP = 0.8V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V; Machine Model > 200V
Chip Complexity: 48 FETs or 12 Equivalent Gates
DT SUFFIX
14–LEAD TSSOP PACKAGE
CASE 948G–01
M SUFFIX
14–LEAD SOIC EIAJ PACKAGE
CASE 965–01
LOGIC DIAGRAM
ORDERING INFORMATION
A1
B1
A2
B2
A3
B3
A4
B4
1
3
2
MC74VHCXXD
MC74VHCXXDT
MC74VHCXXM
Y1
4
6
5
Y2
FUNCTION TABLE
Y = A+B
9
8
10
Inputs
Y3
12
11
13
Y4
Pinout: 14–Lead Packages (Top View)
VCC
B4
A4
Y4
B3
A3
Y3
14
13
12
11
10
9
8
1
2
3
4
5
6
7
A1
B1
Y1
A2
B2
Y2
GND
6/97
 Motorola, Inc. 1997
SOIC
TSSOP
SOIC EIAJ
1
REV 1
Output
A
B
Y
L
L
H
H
L
H
L
H
L
H
H
H
MC74VHC32
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MAXIMUM RATINGS*
Symbol
Value
Unit
DC Supply Voltage
– 0.5 to + 7.0
V
Vin
DC Input Voltage
– 0.5 to + 7.0
V
Vout
DC Output Voltage
– 0.5 to VCC + 0.5
V
IIK
Input Diode Current
– 20
mA
IOK
Output Diode Current
± 20
mA
Iout
DC Output Current, per Pin
± 25
mA
ICC
DC Supply Current, VCC and GND Pins
± 50
mA
PD
Power Dissipation in Still Air,
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
VCC
Parameter
SOIC Packages†
TSSOP Package†
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V CC ).
Unused outputs must be left open.
v
v
* Absolute maximum continuous ratings are those values beyond which damage to the device
may occur. Exposure to these conditions or conditions beyond those indicated may adversely
affect device reliability. Functional operation under absolute–maximum–rated conditions is not
implied.
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C
TSSOP Package: – 6.1 mW/_C from 65_ to 125_C
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
DC Supply Voltage
Vin
DC Input Voltage
Vout
DC Output Voltage
TA
Operating Temperature, All Package Types
tr, tf
Input Rise and Fall Time
VCC = 3.3V ±0.3V
VCC =5.0V ±0.5V
Min
Max
Unit
2.0
5.5
V
0
5.5
V
V
0
VCC
– 40
+ 85
_C
0
0
100
20
ns/V
DC ELECTRICAL CHARACTERISTICS
S b l
Symbol
P
Parameter
T
Test
C
Conditions
di i
VCC
V
VIH
Minimum High–Level
Input Voltage
2.0
3.0 to
5.5
VIL
Maximum Low–Level
Input Voltage
2.0
3.0 to
5.5
VOH
Minimum High–Level
Output Voltage
VOL
Maximum Low–Level
Output Voltage
MOTOROLA
TA = 25°C
Min
Max
1.50
VCC x 0.7
Min
2.0
3.0
4.5
1.9
2.9
4.4
Vin = VIH or VIL
IOH = – 4mA
IOH = – 8mA
3.0
4.5
2.58
3.94
Vin = VIH or VIL
IOL = 50µA
2.0
3.0
4.5
Vin = VIH or VIL
IOL = 4mA
IOL = 8mA
3.0
4.5
Max
1.50
VCC x 0.7
0.50
VCC x 0.3
Vin = VIH or VIL
IOH = – 50µA
2
Typ
TA = – 40 to 85°C
2.0
3.0
4.5
U i
Unit
V
0.50
VCC x 0.3
V
V
1.9
2.9
4.4
2.48
3.80
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.36
0.36
0.44
0.44
V
VHC Data – Advanced CMOS Logic
DL203 — Rev 1
MC74VHC32
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DC ELECTRICAL CHARACTERISTICS
Symbol
Iin
ICC
Parameter
VCC
V
Test Conditions
TA = 25°C
Min
Typ
TA = – 40 to 85°C
Max
Min
Max
Unit
Maximum Input
Leakage Current
Vin = 5.5V or GND
0 to 5.5
± 0.1
± 1.0
µA
Maximum Quiescent
Supply Current
Vin = VCC or GND
5.5
2.0
20.0
µA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
TA = 25°C
S b l
Symbol
tPLH,
tPHL
Cin
P
Parameter
Maximum Propagation Delay,
A or B to Y
T
Test
C
Conditions
di i
Min
TA = – 40 to 85°C
Typ
Max
Min
Max
U i
Unit
ns
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
5.5
8.0
7.9
11.4
1.0
1.0
9.5
13.0
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
3.8
5.3
5.5
7.5
1.0
1.0
6.5
8.5
4
10
Maximum Input Capacitance
10
pF
Typical @ 25°C, VCC = 5.0V
CPD
P
Power
Dissipation
Di i i C
Capacitance
i
(N
(Note 1
1.))
pF
F
14
1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC / 4 (per gate). CPD is used to determine the no–load
dynamic power consumption; PD = CPD VCC2 fin + ICC VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50pF, VCC = 5.0V)
TA = 25°C
S b l
Symbol
Ch
Characteristic
i i
Typ
Max
U i
Unit
VOLP
Quiet Output Maximum Dynamic VOL
0.3
0.8
V
VOLV
Quiet Output Minimum Dynamic VOL
– 0.3
– 0.8
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
TEST
POINT
VCC
A or B
OUTPUT
50%
GND
tPLH
Y
tPHL
50% VCC
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
Figure 1. Switching Waveforms
Figure 2. Test Circuit
INPUT
Figure 3. Input Equivalent Circuit
VHC Data – Advanced CMOS Logic
DL203 — Rev 1
3
MOTOROLA
MC74VHC32
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A–03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
–A–
14
8
P 7 PL
–B–
1
0.25 (0.010)
7
G
D
0.25 (0.010)
T
M
F
J
M
K
14 PL
M
R X 45°
C
SEATING
PLANE
B
M
B
S
A
S
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
8.75
8.55
4.00
3.80
1.75
1.35
0.49
0.35
1.25
0.40
1.27 BSC
0.25
0.19
0.25
0.10
7°
0°
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
7°
0°
0.228 0.244
0.010 0.019
DT SUFFIX
PLASTIC TSSOP PACKAGE
CASE 948G–01
ISSUE O
14X K REF
0.10 (0.004)
0.15 (0.006) T U
M
T U
V
S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,
PROTRUSIONS OR GATE BURRS. MOLD FLASH
OR GATE BURRS SHALL NOT EXCEED 0.15
(0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD
FLASH OR PROTRUSION. INTERLEAD FLASH OR
PROTRUSION SHALL NOT EXCEED
0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN
EXCESS OF THE K DIMENSION AT MAXIMUM
MATERIAL CONDITION.
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE DETERMINED
AT DATUM PLANE –W–.
S
S
N
2X
14
L/2
0.25 (0.010)
8
M
B
–U–
L
PIN 1
IDENT.
F
7
1
0.15 (0.006) T U
N
S
DETAIL E
K
A
–V–
ÉÉÉ
ÇÇÇ
ÇÇÇ
ÉÉÉ
K1
J J1
SECTION N–N
–W–
C
0.10 (0.004)
–T– SEATING
PLANE
MOTOROLA
D
G
H
DETAIL E
4
DIM
A
B
C
D
F
G
H
J
J1
K
K1
L
M
MILLIMETERS
MIN
MAX
4.90
5.10
4.30
4.50
–––
1.20
0.05
0.15
0.50
0.75
0.65 BSC
0.50
0.60
0.09
0.20
0.09
0.16
0.19
0.30
0.19
0.25
6.40 BSC
0_
8_
INCHES
MIN
MAX
0.193
0.200
0.169
0.177
–––
0.047
0.002
0.006
0.020
0.030
0.026 BSC
0.020
0.024
0.004
0.008
0.004
0.006
0.007
0.012
0.007
0.010
0.252 BSC
0_
8_
VHC Data – Advanced CMOS Logic
DL203 — Rev 1
MC74VHC32
OUTLINE DIMENSIONS
M SUFFIX
PLASTIC SOIC EIAJ PACKAGE
CASE 965–01
ISSUE O
14
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH OR PROTRUSIONS AND ARE MEASURED
AT THE PARTING LINE. MOLD FLASH OR
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)
PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
5. THE LEAD WIDTH DIMENSION (b) DOES NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)
TOTAL IN EXCESS OF THE LEAD WIDTH
DIMENSION AT MAXIMUM MATERIAL CONDITION.
DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OR THE FOOT. MINIMUM SPACE
BETWEEN PROTRUSIONS AND ADJACENT LEAD
TO BE 0.46 ( 0.018).
LE
8
Q1
E HE
L
7
1
M_
DETAIL P
Z
D
VIEW P
A
e
c
A1
b
0.13 (0.005)
M
0.10 (0.004)
DIM
A
A1
b
c
D
E
e
HE
0.50
LE
M
Q1
Z
MILLIMETERS
MIN
MAX
–––
2.05
0.05
0.20
0.35
0.50
0.18
0.27
9.90
10.50
5.10
5.45
1.27 BSC
7.40
8.20
0.50
0.85
1.10
1.50
10 _
0_
0.70
0.90
–––
1.42
INCHES
MIN
MAX
–––
0.081
0.002
0.008
0.014
0.020
0.007
0.011
0.390
0.413
0.201
0.215
0.050 BSC
0.291
0.323
0.020
0.033
0.043
0.059
10 _
0_
0.028
0.035
–––
0.056
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and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,
Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488
Mfax: [email protected] – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
VHC Data – Advanced CMOS Logic
DL203 — Rev 1
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5
MC74VHC32/D
MOTOROLA