Renesas GN4014ZB4LM Silicon igbt ignition coil driver Datasheet

GN4014ZB4LD, GN4014ZB4LS,
GN4014ZB4LM
Silicon IGBT Ignition Coil Driver
REJ03G1249-0200
Rev.2.00
Jul. 14, 2005
Features
• Including Clamping Zener
VCL = 400 V(typ)
• Low saturation Voltage
VCE(sat) = 1.4 V(typ)
• SMD package
LDPAK
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
4
4
1
1
2
2
C
1. Gate
2. Collector
3. Emitter
4. Collector
G
3
3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage
Gate to Emitter voltage
Emitter to Collector voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. Value at Tc = 25°C
Rev.2.00
Jul. 14, 2005,
page 1 of 7
Symbol
Ratings
Unit
VCES
VGES
VECS
IC
iC(peak)
PCNote1
Tj
370
±20
24
14
18
60
150
V
V
V
A
A
W
°C
Tstg
–55 to +150
°C
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Collector to Emitter breakdown
voltage
Gate to Emitter breakdown voltage
Collector cutoff current
Gate cutoff current
V(BR)CES
Min
370
Typ
400
Max
430
Unit
V
Test Conditions
Ic = 2 mA, VGE = 0 V
—
—
—
1.4
—
100
±100
1.7
V
µA
µA
V
IG = ±100 µA, VCE = 0 V
VCE = 300 V, VGE = 0 V
VGE = ±20 V, VCE = 0 V
IC = 8 A, VGE = 10 V
Collector to emitter saturation
voltage
VCE(sat)1
±20
—
—
—
Collector to emitter saturation
voltage
Gate to emitter cutoff voltage
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reveres transfer capacitance
VCE(sat)2
—
1.6
2.2
V
IC = 8 A, VGE = 4 V
VGE(off)
td(on)
tr
td (off)
tf
Ciss
Coss
Cres
1.3
—
—
—
—
—
—
—
—
0.2
0.4
1.0
5
1110
75
18
2.2
—
—
—
—
—
—
—
V
µs
µs
µs
µs
pF
pF
pF
IC = 1 mA, VCE = 10 V
Secondary breakdown energy
Es/b
230
—
—
mJ
L = 5 mH
Rev.2.00
Jul. 14, 2005,
V(BR)GES
ICES
IGES
page 2 of 7
VCE = 300 V, RL = 50 Ω,
VGE = 5 V, RG = 200 Ω
VCE = 10 V, VGE = 0,
f = 1 MHz
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
IC (A)
100
60
Collector Current
Collector Dissipation
Pc (W)
80
40
20
10
DC
PW
Op
er
=
10
on
m
s
1s
(T
c=
1
1m
s(
ati
10 µs
10
0
µs
ho
t)
25
°C
)
0.1
Ta = 25°C
0.01
0
0
50
100
150
Case Temperature
200
1
Tc (°C)
IC (A)
450
Collector Current
Collector to Emitter Breakdown Voltage
V(BR)CES (V)
10
400
350
IC = 2 mA
50
100
Pulse Test
4V
6
4
2
VGE = 2 V
0
16
12
8
25°C
Tc = 125°C
-40°C
0
2
3
Gate to Emitter Voltage
page 3 of 7
4
5
VGE (V)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
(A)
6V
2
4
6
8
10
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage
IC
Collector Current
1000
Collector to Emitter Voltage VCE (V)
VCE = 10 V
Pulse Test
Jul. 14, 2005,
300
8
Tc (°C)
20
Rev.2.00
10 V
15 V
150
Typical Transfer Characteristics
1
100
0
0
Case Temperature
0
30
Typical Output Characteristics
500
4
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Breakdown Voltage
vs. Case Temperature
300
-50
3
5
Pulse Test
4
3
IC = 10 A
2
1
0
8A
0
4
8
6A
12
Gate to Emitter Voltage
16
20
VGE (V)
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Typical Capacitance vs.
Collector to Emitter Voltage
10
10000
5
3000
Capacitance C (pF)
Collector to Emitter Saturation Voltage
VCE(sat) (V)
Collector to Emitter Saturation Voltage
vs. Collector Current
-40°C
2
25°C
1
Tc = 125°C
0.5
0.2
VGE = 10 V
Pulse Test
0.1
0.1
Cies
1000
300
100
Coes
30
Cres
10
VGE = 0
f = 1 MHz
3
1
1
0.3
3
10
Collector Current
IC
30
100
0
(A)
12
30
8
20
10
4
VCE
0
20
40
60
Gate Charge
80
0
100
ISC (A)
Secondary breakdown Current
100
50
25°C
10
Tc = 140°C
2 VCC = 16 V
1
0.1
VGE = 10 V, Rg = 200 Ω
0.2
0.5
1
2
5
Inductance Ratio L (mH)
Rev.2.00
Jul. 14, 2005,
td(off)
0.3
tr
0.1
td(on)
0.03
page 4 of 7
VCC = 300 V, VGE = 10 V
Rg = 200 Ω, Ta = 25°C
0.2
0.5
1
2
Collector Current
Secondary Breakdown Current
vs. Inductance Ratio
5
tf
1
Qg (nc)
20
50
3
0.01
0.1
10
Secondary breakdown energy Es/b (mJ)
0
40
10
Switching Time t (µs)
16
VGE (V)
VGE
VCE = 16 V
Gate to Emitter Voltage
VCE (V)
Collector to Emitter Voltage
40
30
Switching Characteristics
20
IC = 10 A
Ta = 25°C
20
Collector to Emitter Voltage VCE (V)
Dynamic Input Characteristics
50
10
5
10
IC (A)
Secondary Breakdown Energy
vs. Case Temperature
1000
500
200
100
50
20
10
25
VCC = 16 V, L = 5 mH
VGE = 10 V, Rg = 200 Ω
50
75
100
Case Temperature Tc (°C)
125
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γs (t)
3
Tc = 25°C
1
0.3
D=1
0.5
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.05
t
ho
θch - c(t) = θs (t) • θch - c
θch - c = 2.08°C/W, Tc = 25°C
lse
pu
1s
PDM
D=
0.03
PW
T
PW
T
0.01
10 µ
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (S)
Switching Time Test Circuit
Waveform
Ic Monitor
90%
R
Vin
Vin Monitor
10%
90%
Rg
D.U.T.
V CC
Ic
Vin = 10 V
td(on)
Jul. 14, 2005,
page 5 of 7
10%
10%
tr
ton
Rev.2.00
90%
td(off)
tf
toff
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]

PRSS0004AE-A
LDPAK(L) / LDPAK(L)V
1.40g
8.6 ± 0.3
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
RENESAS Code
Package Name
PRSS0004AE-B
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
Unit: mm
1.30g
(1.4)
4.44 ± 0.2
10.0
Rev.2.00
Jul. 14, 2005,
2.54 ± 0.5
page 6 of 7
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
+ 0.3
– 0.5
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
(1.5)
(1.5)
8.6 ± 0.3
10.2 ± 0.3
1.7
SC-83
2.49 ± 0.2
11.0 ± 0.5
11.3 ± 0.5
0.3
10.0 +– 0.5
(1.4)
4.44 ± 0.2
10.2 ± 0.3
0.2
0.86 +– 0.1
JEITA Package Code
Unit: mm
2.2
GN4014ZB4LD, GN4014ZB4LS, GN4014ZB4LM
Ordering Information
Part Name
GN4014ZB4LD
GN4014ZB4LS
GN4014ZB4LM
Quantity
50 pcs.
1000 pcs.
1000 pcs.
Shipping Container
Sack
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00
Jul. 14, 2005,
page 7 of 7
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