MCC MMBT2222A-TP Npn general purpose amplifier Datasheet

MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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MMBT2222A
Features
•
•
•
•
•
Surface Mount SOT-23 Package
Capable of 350mWatts of Power Dissipation, IC=600mA
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Marking:1P
x
NPN General
Purpose Amplifier
SOT-23
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
A
Units
D
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
C
Collector-Emitter Breakdown Voltage*
(I C=10mAdc, IB=0)
Collector-Base Breakdown Voltage
(I C=10µAdc, IE=0)
Emitter-Base Breakdown Voltage
(I E=10µAdc, IC=0)
Collector Cutoff Current
(VCE=60Vdc, VBE=3.0Vdc)
40
Vdc
75
Vdc
6.0
Vdc
F
10
VCE(sat)
VBE(sat)
35
50
75
100
50
40
0.6
H
Cobo
Cibo
NF
Current Gain-Bandwidth Product
(I C=20mAdc, VCE=20Vdc, f=100MHz)
Output Capacitance
(VCB=10Vdec, IE=0, f=1.0MHz)
Input Capacitance
(VBE=0.5Vdc, IC=0, f=1.0MHz)
Noise Figure
(IC=100µAdc, VCE=10Vdc, RS=1.0kΩ
f=1.0kHz)
E
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
J
K
DIMENSIONS
300
0.3
1.0
Vdc
1.2
2.0
Vdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
SMALL-SIGNAL CHARACTERISTICS
fT
B
E
G
DC Current Gain*
(I C=0.1mAdc, VCE=10Vdc)
(I C=1.0mAdc, VCE=10Vdc)
(I C=10mAdc, VCE=10Vdc)
(I C=150mAdc, VCE=10Vdc)
(I C=150mAdc, VCE=1.0Vdc)
(I C=500mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(I C=150mAdc, IB=15mAdc)
(I C=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(I C=150mAdc, IB=15mAdc)
(I C=500mAdc, IB=50mAdc)
B
nAdc
ON CHARACTERISTICS
hFE
C
300
pF
25
pF
4.0
dB
10
25
225
60
ns
ns
ns
ns
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Suggested Solder
Pad Layout
MHz
8.0
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
.031
.800
.035
.900
.079
2.000
inches
mm
SWITCHING CHARACTERISTICS
td
tr
ts
tf
*Pulse Width
Delay Time
(VCC=30Vdc, VBE=0.5Vdc
Rise Time
IC=150mAdc, IB1=15mAdc)
Storage Time
(VCC=30Vdc, IC=150mAdc
Fall Time
IB1=IB2=15mAdc)
≤ 300µs, Duty Cycle ≤ 2.0%
.037
.950
.037
.950
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MCC
MMBT2222A
Micro Commercial Components
hFE , DC CURRENT GAIN
1000
700
500
TJ = 125°C
300
200
25°C
100
70
50
−55°C
30
VCE = 1.0 V
VCE = 10 V
20
10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70
100
200
300
500 700 1.0 k
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
10
20
30
50
Figure 2. Collector Saturation Region
200
500
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
30
t, TIME (ns)
t, TIME (ns)
100
70
50
300
20
10
7.0
5.0
10
200 300
20 30
50 70 100
IC, COLLECTOR CURRENT (mA)
500
Figure 3. Turn −On Time
Revision: 8
t′s = ts − 1/8 tf
100
70
50
tf
30
20
3.0
2.0
5.0 7.0
200
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
10
7.0
5.0
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
300
500
Figure 4. Turn −Off Time
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MCC
MMBT2222A
TM
Micro Commercial Components
10
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
100 mA, RS = 2.0 kW
50 mA, RS = 4.0 kW
8.0
6.0
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
4.0
2.0
IC = 50 mA
100 mA
500 mA
1.0 mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
0
50
50 100
100 200
f, FREQUENCY (kHz)
30
CAPACITANCE (pF)
20
Ceb
10
7.0
5.0
Ccb
3.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
20 30
50
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
Figure 5. Frequency Effects
2.0
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 6. Source Resistance Effects
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
Figure 7. Capacitances
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 8. Current−Gain Bandwidth Product
1.0
+0.5
TJ = 25°C
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/° C)
V, VOLTAGE (VOLTS)
0.8
1.0 V
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
RqVC for VCE(sat)
−0.5
−1.0
−1.5
RqVB for VBE
−2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
50 100 200
0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500 1.0 k
Figure 9. “On” Voltages
Revision: 8
−2.5
0.1 0.2
0.5
1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
500
Figure 10. Temperature Coefficients
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MCC
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-TP
Tape&Reel;3Kpcs/Reel
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