Kersemi MBRF2060CTG Schottky barrier rectifier 20 amperes, 60 volt Datasheet

MBRF2060CT
SWITCHMODEt
Schottky Power Rectifier
The SWITCHMODE Power Rectifier employs the Schottky Barrier
principle in a large area metal−to−silicon power diode.
State−of−the−art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use as
rectifiers in very low−voltage, high−frequency switching power
supplies, free wheeling diodes and polarity protection diodes.
Features
•
•
•
•
•
•
•
•
•
•
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Matched Dual Die Construction
High Junction Temperature Capability
High dv/dt Capability
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guardring for Stress Protection
Epoxy Meets UL 94 V−0 @ 0.125 in
Electrically Isolated. No Isolation Hardware Required.
Pb−Free Package is Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
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SCHOTTKY BARRIER
RECTIFIER
20 AMPERES, 60 VOLTS
1
2
3
ISOLATED TO−220
CASE 221D
STYLE 3
1
2
3
MARKING DIAGRAM
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
AYWW
B2060G
AKA
A
Y
WW
B2060
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
ORDERING INFORMATION
Device
1
Package
Shipping
MBRF2060CT
TO−220FP
50 Units/Rail
MBRF2060CTG
TO−220FP
(Pb−Free)
50 Units/Rail
MBRF2060CT
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IF(AV)
10
20
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 133°C
IFRM
20
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
0.5
A
TJ, Tstg
− 65 to +175
°C
dv/dt
10000
V/ms
Viso1
4500
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR), TC = 133°C
Total Device
Operating Junction and Storage Temperature Range (Note 1)
Voltage Rate of Change (Rated VR)
RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2)
Per Figure 3
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS (Per Leg)
Rating
Maximum Thermal Resistance, Junction−to−Case
Lead Temperature for Soldering Purposes: 1/8 in from Case for 5 Seconds
Symbol
Value
Unit
RqJC
4.0
°C/W
TL
260
°C
Symbol
Max
Unit
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 10 Amp, TC = 25°C)
(iF = 10 Amp, TC = 125°C)
(iF = 20 Amp, TC = 25°C)
(iF = 20 Amp, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 3)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
V
0.85
0.75
0.95
0.85
mA
0.15
150
50
TJ = 150°C
150°C
20
I R, REVERSE CURRENT (mA)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
100°C
10
5.0
TJ = 25°C
3.0
1.0
10
TJ = 125°C
TJ = 100°C
1.0
0.1
0.01
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.9
1.0
TJ = 25°C
0
Figure 1. Typical Forward Voltage Per Diode
20
40
60
80
100
VR, REVERSE VOLTAGE (VOLTS)
120
Figure 2. Typical Reverse Current Per Diode
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2
MBRF2060CT
TEST CONDITION FOR ISOLATION TEST*
FULLY ISOLATED PACKAGE
LEADS
HEATSINK
0.110, MIN
Figure 3. Mounting Position
*Measurement made between leads and heatsink with all leads shorted together.
MOUNTING INFORMATION
CLIP
HEATSIN
K
Clip−Mounted
Figure 4. Typical Mounting Technique
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3
MBRF2060CT
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
SEATING
PLANE
C
S
Q
U
A
1 2 3
H
−Y−
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
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4
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
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