Rohm DTA115EM -100ma / -50v digital transistors (with built-in resistors) Datasheet

-100mA / -50V Digital transistors
(with built-in resistors)
DTA115EM / DTA115EE / DTA115EUA / DTA115EKA
 Applications
Inverter, Interface, Driver
 Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3)Only the on/off conditions need to be set for operation, making the device design easy.
4)Higher mounting densities can be achieved.
 Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
 Dimensions (Unit : mm)
DTA115EM
DTA115EE
0.7
1.6
1.2
0.32
0.55
0.2
0.3
0.8
0.8
1.2
0.4 0.4
(2)
0.13
0.5
0.8
ROHM : VMT3
0.2
2.0
(1) GND
(2) IN
(3) OUT
1.0
Abbreviated symbol : 19
2.9
DTA115EKA
0.9
1.1
0.4
0.8
0.7
0.2
0.3
0.15
0.5 0.5
ROHM : EMT3
Abbreviated symbol : 19
DTA115EUA
(1)
0.2
(1) IN
(2) GND
(3) OUT
0.1Min.
0.2
(1)(2)
0.22
1.6
(3)
(3)
(3)
1.6
2.8
(2)
ROHM : UMT3
EIAJ : SC-70
1.3
0.15
(1) GND
(2) IN
(3) OUT
0.15
ROHM : SMT3
EIAJ : SC-59
Each lead hsa same dimensions
1.9
(1) GND
(2) IN
(3) OUT
Each lead hsa same dimensions
Abbreviated symbol : 19
Abbreviated symbol : 19
 Packaging specifications
 Inner circuit
Package
Packging type
Part No.
(1)
0.95 0.95
0.3Min.
(1)
0.65 0.65
0.1Min.
(2)
2.1
1.25
(3)
VMT3 EMT3 UMT3 SMT3
Taping Taping Taping Taping
Code
T2L
TL
T106 T146
Basic ordering unit (pieces) 8000 3000 3000 3000
−
DTA115EM
DTA115EE
−
DTA115EUA
−
−
DTA115EKA
−
−
−
−
−
−
R1
IN
OUT
R2
GND (+)
IN
OUT
GND (+)
−
−
R1=R2=100kΩ
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/2
2009.06 - Rev.C
DTA115EM / DTA115EE / DTA115EUA / DTA115EKA
Data Sheet
 Absolute maximum ratings (Ta=25C)
Parameter
Supply voltage
Input voltage
Limits
Unit
VCC
VI
−50
−40 to +10
−20
−100
V
V
IO
Output current
IC(Max.)
DTA115EM / DTA115EE
Power
dissipation
Symbol
DTA115EUA / DTA115EKA
Junction temperature
Storage temperature
mA
150
PD
mW
Tj
200
150
Tstg
−55 to +150
°C
°C
 Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
VI(off)
−
−
−0.5
VI(on)
−3
−
−
−0.1
−
−0.3
IO(off)
−
−
−
−
−0.15
−0.5
mA
μA
VCC= −50V, VI=0V
GI
82
−
−
−
IO= −5mA, VO= −5V
R1
R2/R1
fT ∗
70
100
130
kΩ
−
0.8
−
1
250
1.2
−
−
MHz
−
Input voltage
VO(on)
Output voltage
II
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
∗ Characteristics of built-in transistor
Unit
Conditions
VCC= −5V, IO= −100μA
V
VO= −0.3V, IO= −1mA
V
IO= −5mA, II= −0.25mA
VI= −5V
VCE= −10V, IE=5mA, f=100MHz
 Electrical characteristic curves
10m
VO=0.3V
5m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(on) (V)
50
20
10
5
Ta= −40°C
Ta=25°C
2
1
500m
200m
500μ 1m
2m
5m
10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Ta=100°C
1m
500μ
Ta=25°C
200μ
100μ
50μ
Ta= −40°C
20μ
10μ
Ta=100°C
200
Ta=25°C
100
50
Ta= −40°C
20
10
5
2μ
1μ
0
2
500m
1
1.5
2
2.5
3
INPUT VOLTAGE : VI (off) (V)
Fig.1 Input voltage vs. Output current
(ON characteristics)
1
VO=5V
500
5μ
Ta=100°C
100m
100μ 200μ
2m
1k
VCC=5V
DC CURRENT GAIN : GI
100
Fig.2 Output current vs. Input voltage
(OFF characteristics)
1
10μ
20μ
50μ 100μ 200μ
500μ 1m
2m
5m 10m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. Output current
IO/II=20/1
OUTPUT VOLTAGE : VO(on) (V)
500m
200m
Ta=100°C
Ta=25°C
100m
50m
Ta= −40°C
20m
10m
5m
2m
1m
10μ
20μ
50μ 100μ 200μ
500μ 1m
2m
5m 10m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. Output current
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/2
2009.06 - Rev.C
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