Fairchild FDB8132 N-channel powertrenchâ® mosfet 30v, 80a, 1.6mî© Datasheet

FDB8132_F085
N-Channel PowerTrench® MOSFET
30V, 80A, 1.6mΩ
Features
Applications
„ Typ rDS(on) = 1.4mΩ at VGS = 10V, ID = 80A
„ 12V Automotive Load Control
„ Typ Qg(10) = 209nC at VGS = 10V
„ Starter/Alternator Systems
„ Typ Qg(10) = 269nC at VGS = 13V
„ Electronic Power Steering Systems
„ Low Miller Charge
„ DC/DC converter
„ Low Qrr Body Diode
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ Qualified to AEC Q101
„ RoHS Compliant
TO-263AB
FDB SERIES
©2011 Fairchild Semiconductor Corporation
FDB8132_F085 Rev. C1
1
www.fairchildsemi.com
FDB8132_F085 N-Channel PowerTrench® MOSFET
February 2011
Symbol
Drain to Source Voltage
VDSS
VGS
ID
EAS
PD
Parameter
Ratings
30
Units
V
Gate to Source Voltage
±20
V
Drain Current Continuous (TC < 167oC, VGS = 10V)
80
Pulsed
A
See Figure 4
Single Pulse Avalanche Energy
(Note 1)
1904
mJ
Power Dissipation
341
W
Derate above 25oC
2.3
W/oC
TJ, TSTG Operating and Storage Temperature
o
-55 to +175
C
Thermal Characteristics
RθJC
Maximum Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient TO-263,1in2 copper
pad area
0.44
o
C/W
43
o
C/W
Package Marking and Ordering Information
Device Marking
FDB8132
Device
FDB8132_F085
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
30
-
-
VDS = 24V, VGS = 0V
-
-
1
-
-
250
VGS = ±20V
-
-
±100
VGS = VDS, ID = 250μA
2
2.8
4
V
ID = 80A, VGS= 10V
-
1.4
1.6
mΩ
ID = 80A, VGS= 10V, TJ = 175°C
-
2.3
2.7
mΩ
VDS = 15V, VGS = 0V,
f = 1MHz
-
14100
-
pF
-
2135
-
pF
pF
TJ = 150oC
μA
nA
On Characteristics
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
1400
-
Rg
Gate Resistance
f = 1MHz
-
1.4
-
Ω
Qg(TOT)
Total Gate Charge at 13V
VGS = 0 to 13V
-
269
350
nC
-
209
272
nC
-
22
29
nC
Qg(10)
Gate Charge at 10V
VGS = 0 to 10V
Qg(TH)
Threshold Gate Charge
VGS = 0 to 2V
Qgs
Gate to Source Gate Charge
-
50
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
28
-
nC
Qgd
Gate to Drain “Miller“ Charge
-
46
-
nC
FDB8132_F085 Rev. C1
2
VDD = 15V
ID = 80A
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FDB8132_F085 N-Channel PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Switching Characteristics
ton
Turn-On Time
-
-
80
ns
td(on)
Turn-On Delay Time
-
20
-
ns
tr
Turn-On Rise Time
-
29
-
ns
td(off)
Turn-Off Delay Time
-
79
-
ns
tf
Turn-Off Fall Time
-
30
-
ns
toff
Turn-Off Time
-
-
173
ns
ISD = 80A
-
0.9
1.25
V
ISD = 40A
-
0.8
1.0
V
-
53
69
ns
-
54
71
nC
VDD = 15V, ID = 80A,
VGS = 5V, RGS = 2Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 80A, dISD/dt = 100A/μs
Notes:
1: Starting TJ = 25oC, L = 0.93mH, IAS = 64A
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDB8132_F085 Rev. C1
3
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FDB8132_F085 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25oC unless otherwise noted
400
350
1.0
ID, DRAIN CURRENT (A)
POWER DISSIPATION MULTIPLIER
1.2
0.8
0.6
0.4
0.2
0.0
300
VGS = 10V
250
CURRENT LIMITED
BY PACKAGE
200
150
100
50
0
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
0
175
25
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
175
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 1. Normalized Power Dissipation vs Case
Temperature
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
DUTY CYCLE - DESCENDING ORDER
PDM
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
-5
10
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TC
SINGLE PULSE
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
Figure 3. Normalized Maximum Transient Thermal Impedance
10000
IDM, PEAK CURRENT (A)
TC = 25oC
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
175 - TC
I = I2
150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
1
10
Figure 4. Peak Current Capability
FDB8132_F085 Rev. C1
4
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FDB8132_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
500
IAS, AVALANCHE CURRENT (A)
5000
ID, DRAIN CURRENT (A)
1000
100
100us
100
1ms
10
10ms
DC
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1
1
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
50
0.1
1
10
100
1000
10000
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
160
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
120
TJ = 175oC
TJ = 25oC
80
o
TJ = -55 C
40
0
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
120
80
40
0
0.0
5
Figure 7. Transfer Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID = 80A
8
6
4
TJ = 175oC
2
0
TJ = 25oC
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDB8132_F085 Rev. C1
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
Figure 8. Saturation Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
10
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGS = 20V
10V
8V
7V
6V
5V
4.5V
4V
1.8
1.6
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
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FDB8132_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
1.10
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.2
VGS = VDS
ID = 250μA
1.0
0.8
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
200
CAPACITANCE (pF)
30000
Ciss
10000
Coss
f = 1MHz
VGS = 0V
1000
0.1
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 13. Capacitance vs Drain to Source
Voltage
FDB8132_F085 Rev. C1
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
ID = 1mA
10
ID = 80A
8
VDD = 12V
VDD = 15V
6
VDD = 18V
4
2
0
0
60
120
180
Qg, GATE CHARGE(nC)
240
Figure 14. Gate Charge vs Gate to Source Voltage
6
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FDB8132_F085 N-Channel PowerTrench® MOSFET
Typical Characteristics
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I51
FDB8132_F085 Rev. C1
7
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FDB8132_F085 N-Channel PowerTrench® MOSFET
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