Hittite HMC256 Gaas mmic i/q mixer 5.9 - 12 ghz Datasheet

HMC256
v03.1007
3
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Typical Applications
Features
The HMC256 is ideal for:
High Image Rejection: >30 dB
• Microwave Radio & VSAT
Input IP3: +18 dB
• Test Instrumentation
Wideband IF: DC to 1.5 GHz
• Military Radios Radar & ECM
Die Size: 1.6 x 1.3 x 0.1 mm
MIXERS - I/Q MIXERS / IRM - CHIP
• Space
Functional Diagram
General Description
The HMC256 chip is a compact, 2.08 mm2, I/Q Mixer
MMIC which can be used as an Image Reject Mixer
(IRM) or Single Sideband (SSB) upconverter. The
chip utilizes two standard Hittite double-balanced
mixer cells and a Lange Coupler realized in GaAs
MESFET technology. All data is with the chip in a
50 Ohm test fixture connected via 0.025 mm (1 mil)
diameter wire bonds of minimal length <0.51 mm (<20
mils). A low frequency quadrature hybrid was used
to interface the MMIC IF ports to a 120 MHz IF USB
output. This provides an example of the I/Q Mixer
in an IRM application. The IF may be used from DC
to 1.5 GHz. This I/Q Mixer is a more reliable, much
smaller replacement to hybrid drop-in style I/Q Mixer
assemblies.
Electrical Specifi cations, TA = +25° C, As an IRM
IF = 70 - 200 MHz
LO = +18 dBm
Parameter
Min.
Max.
Min.
Typ.
Units
Max.
Frequency Range, RF
5.9 - 12
7.1 - 11.7
GHz
Frequency Range, LO
5.7 - 12
6.9 - 11.7
GHz
Frequency Range, IF
DC - 1.5
Conversion Loss
Noise Figure (SSB)
3-2
Typ.
IF = 70 - 200 MHz
LO = +15 dBm
DC - 1.5
8
10.5
8
10.5
GHz
8
10.5
dB
8
10.5
dB
Image Rejection (IR)
24
32
20
30
dB
LO to RF Isolation
22
30
22
30
dB
LO to IF Isolation
27
35
27
35
dB
RF to IF Isolation
24
30
24
30
dB
IP3 (Input)
18
17
dBm
1 dB Gain Compression (Input)
5
5
dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Conversion Gain to Desired Sideband
vs. Temperature @ LO = +15 dBm,
IF = 120 MHz USB
Conversion Gain to Desired Sideband
vs. LO Drive, IF = 120 MHz USB
0
-5
-10
-40C
+25C
+85C
-15
-20
-5
3
-10
LO = +12 dBm
LO = +14 dBm
LO = +16 dBm
LO = +18 dBm
-15
-20
5
6
7
8
9
10
11
12
13
5
6
7
FREQUENCY (GHz)
50
50
40
40
30
20
-30C
+25C
+85C
0
10
11
12
13
11
12
13
11
12
13
30
20
- 12 dBm
- 14 dBm
- 16 dBm
- 18 dBm
10
0
5
6
7
8
9
10
11
12
13
5
6
7
RF FREQUENCY (GHz)
8
9
10
RF FREQUENCY (GHz)
Return Loss @ LO = +15 dBm
Isolations @ LO = +15 dBm
0
0
-5
RF/IF
LO/IF
LO/RF
-10
-10
ISOLATION (dB)
RETURN LOSS (dB)
9
Image Rejection vs.
LO Drive, IF = 120 MHz USB
IMAGE REJECTION (dB)
IMAGE REJECTION (dB)
Image Rejection vs. Temperature
LO = +15 dBm, IF = 120 MHz USB
10
8
RF FREQUENCY (GHz)
MIXERS - I/Q MIXERS / IRM - CHIP
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
0
-15
-20
RF
LO
-25
-20
-30
-40
-30
-50
-35
-40
-60
5
6
7
8
9
10
FREQUENCY (GHz)
11
12
13
5
6
7
8
9
10
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-3
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
3-4
Input IP3 vs. LO Drive, IF = 120 MHz USB
0
25
THIRD ORDER INTERCEPT (dBm)
MIXERS - I/Q MIXERS / IRM - CHIP
3
IF CONVERSION GAIN & RETURN LOSS (dB)
IF Bandwidth @ LO = 15 dBm
-5
-10
-15
-20
IF Conversion Gain
IF Return Loss
-25
-30
20
15
-14 dBm
-16 dBm
-18 dBm
10
0
0.5
1
1.5
2
2.5
FREQUENCY (GHz)
Absolute Maximum Ratings
RF / IF Input
+13 dBm
LO Drive
+27 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9.36 mW/°C above 85 °C)
0.61 W
Thermal Resistance (RTH)
(junction to die bottom)
106.8 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
3
6
6.5
7
7.5
8
FREQUENCY (GHz)
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/"3%26% (!.$,).' 02%#!54)/.3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Outline Drawing
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BOND PADS ARE .004” SQUARE.
MIXERS - I/Q MIXERS / IRM - CHIP
3
3. TYPICAL BOND PAD SPACING CENTER TO CENTER IS .006”.
4. BACKSIDE METALLIZATION: GOLD.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information [1]
Standard
Alternate
WP-3 (Waffle Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-5
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Pad Descriptions
MIXERS - I/Q MIXERS / IRM - CHIP
3
3-6
Pad Number
Function
Description
1
RF
This pin is AC coupled
and matched to 50 Ohm.
2
LO
This pin is AC coupled
and matched to 50 Ohm.
3, 4
IF1, IF2
This pin is DC coupled. For operation to
DC pin must not sink/source more than
2 mA of current or failure may result.
Backside
GND
The backside of the die must connect to RF ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC256
v03.1007
GaAs MMIC I/Q MIXER
5.9 - 12 GHz
Image Reject Mixer Suggested Application Circuit
Below in Figure 1 is a photo and in Figure 2 a schematic of the HMC256 image reject mixer MMIC die connected to a quadrature
hybrid (120 MHz) manufactured by Merrimac Industries West Caldwell, NJ (P/N QHZ-2A-120).
Figure 1:
Complete MIC IRM Assembly
Figure 2:
Schematic of HMC256 IRM MMIC
Connected to the Quadrature Hybrid
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
3
MIXERS - I/Q MIXERS / IRM - CHIP
Data presented for the HMC256 MMIC IRM was obtained using the circuit described here. Please note that the image rejection
and isolation performance is dependent on the selection of the low frequency hybrid. The performance specification of the low
frequency quadrature hybrid as well as the phase balance and VSWR of the interface circuit to the HMC256 MMIC will effect the
overall IRM performance.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31 mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3-7
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