IXYS IXFR21N100Q Hiperfet power mosfets isoplus247 Datasheet

IXFR 21N100Q
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Back Surface)
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
ID25
IDM
IAR
Maximum Ratings
1000
1000
V
V
±20
±30
V
V
TC = 25°C
TC = 25°C, Note 1
TC = 25°C
18
84
21
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
10
V/ns
PD
TC = 25°C
350
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
V~
5
g
TJ
TJM
Tstg
TL
1.6 mm (0.063 in.) from case for 10 s
VISOL
50/60 Hz, RMS
= 1000 V
=
18 A
= 0.50 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode, Low Qg,
High dv/dt, Low trr, HDMOSTM Family
Symbol
VDSS
ID25
RDS(on)
t = 1 min
ISOPLUS 247TM
E153432
Isolated backside*
G = Gate
S = Source
* Patent pending
Features
z
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z
IXYS advanced low Qg process
z
Low gate charge and capacitances
- easier to drive
-faster switching
z
Low drain to tab capacitance(<30pF)
z
Weight
D = Drain
z
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
z
Rated for Unclamped Inductive Load
Switching (UIS)
z
Fast intrinsic Rectifier
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 1mA
1000
V
VGS(th)
VDS = VGS, ID = 4mA
3
5 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = IT
Notes 2, 3
© 2003 IXYS All rights reserved
±100 nA
TJ = 125°C
100 µA
2 mA
0.5
Ω
Applications
z
DC-DC converters
z
z
z
z
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
z
Easy assembly
z
z
Space savings
High power density
DS98723B(01/03)
IXFR 21N100Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = IT
Notes 2, 3
22
S
5900
pF
550
pF
Crss
90
pF
td(on)
21
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
16
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
18
ns
td(off)
RG = 1 Ω (External), Notes 2, 3
60
ns
12
ns
170
nC
38
nC
75
nC
tf
QG(on)
QGS
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Notes 2, 3
QGD
ISOPLUS 247 OUTLINE
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
Dim.
RthJC
0.35
0.15
RthCK
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
21
A
ISM
Repetitive; Note 1
84
A
VSD
IF = IT, VGS = 0 V, Notes 2, 3
1.5
V
250
ns
trr
QRM
IF = IS,-di/dt = 100 A/µs, VR = 100 V
1.4
µC
8
A
IRM
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 10.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFR 21N100Q
30
40
VGS = 9V
8V
7V
6V
ID - Amperes
30
TJ = 125OC V GS = 9V
8V
7V
6V
25
ID - Amperes
TJ = 25OC
20
5V
20
15
10
5V
10
5
4V
0
0
5
10
15
4V
0
20
0
5
10
VDS - Volts
30
35
2.6
VGS = 10V
VGS = 10V
2.4
RDS(ON) - Normalized
RDS(ON) - Normalized
25
Fig.2 Output Characteristics @ Tj = 125°C
2.8
O
T J = 125 C
2.0
1.6
T J = 25OC
1.2
0
10
20
2.2
1.8
ID =21A
ID =10.5A
1.4
1.0
25
30
50
100
125
150
Fig.4 Temperature Dependence of Drain
to Source Resistance
Fig.3 RDS(on) vs. Drain Current
24
25
20
ID - Amperes
20
15
10
16
12
T J = 125oC
8
TJ = 25oC
5
0
75
TJ - Degrees C
ID - Amperes
ID - Amperes
20
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
0.8
15
4
-50
-25
0
25
50
75
100 125 150
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature
© 2003 IXYS All rights reserved
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VGS - Volts
Fig.6 Drain Current vs Gate Source
Voltage
6.5
IXFR 21N100Q
10
30000
Capacitance - pF
VGS - Volts
6
4
f = 100kHz
Ciss
10000
VDS = 500 V
ID = 21 A
IG = 10 mA
8
Coss
1000
Crss
2
100
0
0
40
80
120
160
60
200
0
5
10
15
20
25
30
35
40
VDS - Volts
Gate Charge - nC
Fig. 7 Gate Charge Characteristic Curve
Fig. 8 Capacitance Curves
90
ID - Amperes
75
60
45
30
TJ = 125OC
TJ = 25OC
15
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD - Volts
Fig. 9 Drain Current vs Drain Source Voltage
R(th)JC - K/W
1.000
0.100
0.010
0.001
10-4
10-3
10-2
10-1
100
Pulse Width - Seconds
Fig. 10 Transient Thermal Impedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
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